公开(公告)号：US20250123646A1

公开(公告)日：2025-04-17

申请号：US18821302

申请日：2024-08-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Kang Wei ,  Boqiang Xiao ,  Timothy Merkin ,  Joseph Sankman

IPC: G05F1/575 ,  G05F1/563 ,  G05F1/595 ,  H02M3/07

Abstract: An integrated circuit includes a first transistor coupled between a power input and a power output, the first transistor being an N-type transistor and having a first transistor control input; a first amplifier stage having a reference input, a feedback input, and a first amplifier output, the feedback input coupled to the power output; a second amplifier stage having an amplifier input and a second amplifier output, the amplifier input coupled to the first amplifier output, and the second amplifier output coupled to the first transistor control input; and a first biasing circuit coupled to the first transistor control input, the first biasing circuit having an electrical control input coupled to the power output.

公开(公告)号：US20220140826A1

公开(公告)日：2022-05-05

申请号：US17490660

申请日：2021-09-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Orlando Lazaro ,  Timothy Merkin ,  John Russell Broze ,  Matthew Xiong ,  Yogesh Kumar Ramadass ,  Ujwal Radhakrishna

IPC: H03K17/14 ,  H03K17/0812

Abstract: In a described example, a circuit includes a power device having voltage inputs and a command input. A sensing circuit has a sensor input and a sensor output, in which the sensor input is coupled to the power device. A control circuit has a control input and a control output, in which the control input coupled to the sensor output. A driver circuit has a driver input and a driver output. The driver input is coupled to the control output, and the driver output is coupled to the command input of the power device.

公开(公告)号：US20240405024A1

公开(公告)日：2024-12-05

申请号：US18534056

申请日：2023-12-08

Applicant: Texas Instruments Incorporated

Inventor： Ujwal Radhakrishna ,  Yoganand Saripalli ,  Zhikai Tang ,  Timothy Merkin ,  Jungwoo Joh

IPC: H01L27/095 ,  H01L27/02 ,  H01L29/20 ,  H01L29/778

Abstract: The present disclosure generally relates to integrated devices with a conductive barrier structure. In an example, a semiconductor device includes a substrate, a conductive barrier structure, a channel layer, a barrier layer, a gate, and a conductive structure. The substrate is of a first semiconductor material. The conductive barrier structure is on the substrate. The channel layer is of a second semiconductor material and is on the conductive barrier structure. The barrier layer is on the channel layer, and the channel layer is between the barrier layer and the conductive barrier structure. The gate is over the barrier layer opposing the channel layer. The conductive structure is electrically coupled between the conductive barrier structure, the channel layer, and the barrier layer.