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公开(公告)号:US20250052813A1
公开(公告)日:2025-02-13
申请号:US18929471
申请日:2024-10-28
Applicant: Texas Instruments Incorporated
Inventor: Prasanth Viswanathan Pillai , Swathi Gangasani , Vaskar Sarkar
IPC: G01R31/3177 , G01R31/3167 , G01R31/3185
Abstract: An example apparatus includes a buffer configured to, when enabled: obtain an input voltage; and provide the input voltage to a first boundary cell; and a second boundary cell configured to, when the apparatus is used in analog mode and a boundary scan occurs disable the buffer.
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公开(公告)号:US10460821B2
公开(公告)日:2019-10-29
申请号:US15896817
申请日:2018-02-14
Applicant: Texas Instruments Incorporated
Inventor: Prakash Narayanan , Nikita Naresh , Vaskar Sarkar , Rajat Mehrotra
Abstract: A built-in self-test (BIST) parallel memory test architecture for an integrated circuit, such as a system-on-a-chip (SoC), is disclosed. A BIST controller generates a test data pattern for memories of a common memory type, with this test data pattern forwarded to the memories, with pipeline delay stages inserted in the data path according to the operational speed of the memory in its normal operation. The expected data response of these memories, when read, and corresponding to this test data pattern is delayed for a group of memories by a local delay response generator shared by those memories. For example, the memories in the group of memories may be physically near one another. The local delay response generator delays the expected data response by a delay corresponding to the memory latency of those memories in the group, before applying the expected data response to local comparators associated with the memories in the group.
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公开(公告)号:US20170157524A1
公开(公告)日:2017-06-08
申请号:US15434717
申请日:2017-02-16
Applicant: Texas Instruments Incorporated
Inventor: Prakash Narayanan , Nikita Naresh , Vaskar Sarkar , Rajat Mehrotra
IPC: G11C29/00
CPC classification number: G11C29/12 , G11C29/38 , G11C29/40 , G11C2029/0401 , G11C2029/2602
Abstract: A built-in self-test (BIST) parallel memory test architecture for an integrated circuit, such as a system-on-a-chip (SoC), is disclosed. A BIST controller generates a test data pattern for memories of a common memory type, with this test data pattern forwarded to the memories, with pipeline delay stages inserted in the data path according to the operational speed of the memory in its normal operation. The expected data response of these memories, when read, and corresponding to this test data pattern is delayed for a group of memories by a local delay response generator shared by those memories. For example, the memories in the group of memories may be physically near one another. The local delay response generator delays the expected data response by a delay corresponding to the memory latency of those memories in the group, before applying the expected data response to local comparators associated with the memories in the group.
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公开(公告)号:US12130329B2
公开(公告)日:2024-10-29
申请号:US18115739
申请日:2023-02-28
Applicant: Texas Instruments Incorporated
Inventor: Prasanth Viswanathan Pillai , Swathi Gangasani , Vaskar Sarkar
IPC: G01R31/3177 , G01R31/3167 , G01R31/3185
CPC classification number: G01R31/3177 , G01R31/3167 , G01R31/318508 , G01R31/318533 , G01R31/318536
Abstract: An example apparatus includes a buffer configured to, when enabled: obtain an input voltage; and provide the input voltage to a first boundary cell; and a second boundary cell configured to, when the apparatus is used in analog mode and a boundary scan occurs disable the buffer.
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公开(公告)号:US20170125125A1
公开(公告)日:2017-05-04
申请号:US15066924
申请日:2016-03-10
Applicant: Texas Instruments Incorporated
Inventor: Prakash Narayanan , Nikita Naresh , Vaskar Sarkar , Rajat Mehrotra
IPC: G11C29/12
CPC classification number: G11C29/12 , G11C29/38 , G11C29/40 , G11C2029/0401 , G11C2029/2602
Abstract: A built-in self-test (BIST) parallel memory test architecture for an integrated circuit of the system-on-a-chip (SoC) type. A BIST controller generates a test data pattern for memories of a common memory type, with this test data pattern forwarded to the memories, with pipeline delay stages inserted in the data path according to the operational speed of the memory in its normal operation. The expected data response of these memories, when read, and corresponding to this test data pattern is delayed for a group of memories by a local delay response generator shared by those memories. For example, the memories in the group of memories may be physically near one another. The local delay response generator delays the expected data response by a delay corresponding to the memory latency of those memories in the group, before applying the expected data response to local comparators associated with the memories in the group.
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公开(公告)号:US20240288496A1
公开(公告)日:2024-08-29
申请号:US18115739
申请日:2023-02-28
Applicant: Texas Instruments Incorporated
Inventor: Prasanth Viswanathan Pillai , Swathi Gangasani , Vaskar Sarkar
IPC: G01R31/3177 , G01R31/3167
CPC classification number: G01R31/3177 , G01R31/3167 , G01R31/318508 , G01R31/318533 , G01R31/318536
Abstract: An example apparatus includes a buffer configured to. when enabled: obtain an input voltage: and provide the input voltage to a first boundary cell: and a second boundary cell configured to. when the apparatus is used in analog mode and a boundary scan occurs disable the buffer.
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公开(公告)号:US20180174663A1
公开(公告)日:2018-06-21
申请号:US15896817
申请日:2018-02-14
Applicant: Texas Instruments Incorporated
Inventor: Prakash Narayanan , Nikita Naresh , Vaskar Sarkar , Rajat Mehrotra
IPC: G11C29/12
CPC classification number: G11C29/12 , G11C29/38 , G11C29/40 , G11C2029/0401 , G11C2029/2602
Abstract: A built-in self-test (BIST) parallel memory test architecture for an integrated circuit, such as a system-on-a-chip (SoC), is disclosed. A BIST controller generates a test data pattern for memories of a common memory type, with this test data pattern forwarded to the memories, with pipeline delay stages inserted in the data path according to the operational speed of the memory in its normal operation. The expected data response of these memories, when read, and corresponding to this test data pattern is delayed for a group of memories by a local delay response generator shared by those memories. For example, the memories in the group of memories may be physically near one another. The local delay response generator delays the expected data response by a delay corresponding to the memory latency of those memories in the group, before applying the expected data response to local comparators associated with the memories in the group.
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公开(公告)号:US09899103B2
公开(公告)日:2018-02-20
申请号:US15434717
申请日:2017-02-16
Applicant: Texas Instruments Incorporated
Inventor: Prakash Narayanan , Nikita Naresh , Vaskar Sarkar , Rajat Mehrotra
CPC classification number: G11C29/12 , G11C29/38 , G11C29/40 , G11C2029/0401 , G11C2029/2602
Abstract: A built-in self-test (BIST) parallel memory test architecture for an integrated circuit, such as a system-on-a-chip (SoC), is disclosed. A BIST controller generates a test data pattern for memories of a common memory type, with this test data pattern forwarded to the memories, with pipeline delay stages inserted in the data path according to the operational speed of the memory in its normal operation. The expected data response of these memories, when read, and corresponding to this test data pattern is delayed for a group of memories by a local delay response generator shared by those memories. For example, the memories in the group of memories may be physically near one another. The local delay response generator delays the expected data response by a delay corresponding to the memory latency of those memories in the group, before applying the expected data response to local comparators associated with the memories in the group.
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