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    METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE INCLUDING LASER ANNEALING
    1.
    发明申请
    METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE INCLUDING LASER ANNEALING 有权
    用于制造包括激光退火的半导体衬底的方法

    公开(公告)号：US20090267200A1

    公开(公告)日：2009-10-29

    申请号：US12110740

    申请日：2008-04-28

    申请人： Thomas Gutt ,  Frank Umbach ,  Hans Peter Felsl ,  Manfred Pfaffenlehner ,  Franz-Josef Niedernostheide ,  Holger Schulze

    发明人： Thomas Gutt ,  Frank Umbach ,  Hans Peter Felsl ,  Manfred Pfaffenlehner ,  Franz-Josef Niedernostheide ,  Holger Schulze

    IPC分类号： H01L21/265 ,  H01L29/36

    CPC分类号： H01L29/7395 ,  H01L21/26513 ,  H01L21/268 ,  H01L29/0611 ,  H01L29/0615 ,  H01L29/08 ,  H01L29/66083 ,  H01L29/861

    摘要： A method for manufacturing a semiconductor device by laser annealing. One embodiment provides a semiconductor substrate having a first surface and a second surface. The second surface is arranged opposite to the first surface. A first dopant is introduced into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface. A second dopant is introduced into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth. At least a first laser anneal is performed by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface.

    摘要翻译： 一种通过激光退火制造半导体器件的方法。 一个实施例提供了具有第一表面和第二表面的半导体衬底。 第二表面布置成与第一表面相对。 第一掺杂剂在第二表面被引入半导体衬底中，使得其半导体衬底中的峰值掺杂浓度位于相对于第二表面的第一深度。 第二掺杂剂在第二表面被引入到半导体表面中，使得其半导体衬底中的峰值掺杂浓度相对于第二表面位于第二深度，其中第一深度大于第二深度。 至少通过将至少一个激光束脉冲引导到第二表面上来进行至少第一激光退火，以至少在第二表面上以部分熔化半导体衬底。

    Method for manufacturing a semiconductor substrate including laser annealing
    2.
    发明授权
    Method for manufacturing a semiconductor substrate including laser annealing 有权
    包括激光退火的半导体衬底的制造方法

    公开(公告)号：US07842590B2

    公开(公告)日：2010-11-30

    申请号：US12110740

    申请日：2008-04-28

    申请人： Thomas Gutt ,  Frank Umbach ,  Hans Peter Felsl ,  Manfred Pfaffenlehner ,  Franz-Josef Niedernostheide ,  Holger Schulze

    发明人： Thomas Gutt ,  Frank Umbach ,  Hans Peter Felsl ,  Manfred Pfaffenlehner ,  Franz-Josef Niedernostheide ,  Holger Schulze

    IPC分类号： H01L21/425

    CPC分类号： H01L29/7395 ,  H01L21/26513 ,  H01L21/268 ,  H01L29/0611 ,  H01L29/0615 ,  H01L29/08 ,  H01L29/66083 ,  H01L29/861

    摘要： A method for manufacturing a semiconductor device by laser annealing. One embodiment provides a semiconductor substrate having a first surface and a second surface. The second surface is arranged opposite to the first surface. A first dopant is introduced into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface. A second dopant is introduced into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth. At least a first laser anneal is performed by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface.

    摘要翻译： 一种通过激光退火制造半导体器件的方法。 一个实施例提供了具有第一表面和第二表面的半导体衬底。 第二表面布置成与第一表面相对。 第一掺杂剂在第二表面被引入半导体衬底中，使得其半导体衬底中的峰值掺杂浓度位于相对于第二表面的第一深度。 第二掺杂剂在第二表面被引入到半导体表面中，使得其半导体衬底中的峰值掺杂浓度相对于第二表面位于第二深度，其中第一深度大于第二深度。 至少通过将至少一个激光束脉冲引导到第二表面上来进行至少第一激光退火，以至少在第二表面上以部分熔化半导体衬底。