公开(公告)号：US12083553B2

公开(公告)日：2024-09-10

申请号：US17662867

申请日：2022-05-11

Applicant: Tokyo Electron Limited

Inventor： Yusuke Miyakubo

IPC: B05D1/02 ,  B05B12/02 ,  B05D1/32

CPC classification number: B05D1/02 ,  B05B12/02 ,  B05D1/32

Abstract: A substrate processing method includes performing a developing processing on a substrate. The developing processing includes supplying a developing liquid on a surface of the substrate to form a liquid film of the developing liquid on the surface of the substrate; maintaining the liquid film on the surface such that development progresses; and performing, during the maintaining of the liquid film, a first processing of supplying a gas to an inner region located inward of a peripheral region on the surface of the substrate and a second processing of supplying an adjusting liquid configured to suppress progress of the development on the peripheral region to adjust a degree of the development between the peripheral region and the inner region. The second processing is started after a start time of the first processing, and the second processing is ended after an end time of the first processing.

公开(公告)号：US12072625B2

公开(公告)日：2024-08-27

申请号：US17238541

申请日：2021-04-23

Applicant: Tokyo Electron Limited

Inventor： Takuya Miura ,  Kouichirou Tanaka ,  Shogo Takahashi ,  Yusuke Miyakubo ,  Kentaro Yoshihara

IPC: G03F7/00

CPC classification number: G03F7/0025

Abstract: A nozzle unit for a liquid treatment apparatus that performs a liquid treatment on a substrate using a liquid, includes a first gas nozzle having a discharge flow path for allowing a first gas to flow through the discharge flow path and a first discharge port for discharging the first gas flowing through the discharge flow path toward a surface of the substrate, wherein the first discharge port is formed so as to extend in a first direction along the surface, and wherein a width of the discharge flow path in the first direction increases as the discharge flow path approaches the first discharge port, so that the first gas is discharged radially from the first discharge port.

公开(公告)号：US20220371048A1

公开(公告)日：2022-11-24

申请号：US17662867

申请日：2022-05-11

Applicant: Tokyo Electron Limited

Inventor： Yusuke Miyakubo

IPC: B05D1/02 ,  B05D1/32 ,  B05B12/02

Abstract: A substrate processing method includes performing a developing processing on a substrate. The developing processing includes supplying a developing liquid on a surface of the substrate to form a liquid film of the developing liquid on the surface of the substrate; maintaining the liquid film on the surface such that development progresses; and performing, during the maintaining of the liquid film, a first processing of supplying a gas to an inner region located at an inner side than a peripheral region on the surface of the substrate and a second processing of supplying an adjusting liquid configured to suppress progress of the development on the peripheral region to adjust a degree of the development between the peripheral region and the inner region. The second processing is started after a start time of the first processing, and the second processing is ended after an end time of the first processing.