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公开(公告)号：US11480881B2
公开(公告)日：2022-10-25
申请号：US17385387
申请日：2021-07-26
IPC分类号： G03F7/16
摘要： A method of processing a substrate includes: performing a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface and the developer is discharged from the discharge port at a first flow rate while rotating the substrate; and after the first developing process, performing a second developing process of discharging the developer from the discharge port at a second flow rate higher than the first flow rate in a state in which the end surface is in contact with the developer on the front surface at a position facing a center of the front surface of the substrate while rotating the substrate.
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2.发明申请公开(公告)号：US20210191271A1
公开(公告)日：2021-06-24
申请号：US17130126
申请日：2020-12-22
摘要： A liquid processing apparatus includes a substrate holder configured to hold a substrate; a processing liquid supply configured to supply a processing liquid onto a front surface of the substrate; a gas supply configured to supply a gas onto the front surface of the substrate; and a controller. The gas supply includes a diffusion nozzle which is provided with multiple discharge openings respectively elongated at different angles with respect to the front surface of the substrate. The controller performs controlling the gas supply to jet the gas from the diffusion nozzle onto a region of the front surface of the substrate including at least a central portion thereof in a state that the processing liquid is supplied on the front surface of the substrate.
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公开(公告)号：US20190096706A1
公开(公告)日：2019-03-28
申请号：US16139392
申请日：2018-09-24
IPC分类号： H01L21/67 , H01L21/687
摘要： When performing a liquid processing on a substrate W being rotated and removing a processing liquid by a cleaning liquid, a cleaning liquid nozzle 421 configured to discharge a cleaning liquid slantly with respect to a surface of the substrate W toward a downstream side of a rotational direction of the substrate W and a gas nozzle 411 configured to discharge a gas toward a position adjacent to a central portion side of the substrate W when viewed from a liquid arrival position R of the cleaning liquid are moved from the central portion side toward a peripheral portion side. A rotation number of the substrate is varied such that rotation number in a period during which the liquid arrival position R moves in the second region becomes smaller than a maximum rotation number in a period during which the liquid arrival position moves in the first region.
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公开(公告)号：US10128136B2
公开(公告)日：2018-11-13
申请号：US15671325
申请日：2017-08-08
IPC分类号： H01L21/76 , H01L21/67 , B05C5/02 , B05C11/08 , B05C11/10 , B08B3/08 , B08B3/10 , G03F7/16 , H01L21/027 , G03F7/30
摘要： There is provided a guide member 3 in which an inclined surface 32 thereof is inclined downwardly outwards from an edge portion of a rear surface of a horizontally held wafer W; and a cylindrical surrounding member 2 which surrounds the wafer W and in which an upper peripheral portion thereof is inwardly extended obliquely upwards. Further, the surrounding member 2 has, at an inner surface side thereof, two groove portions 23 extended along an entire circumference and located above a height position of the horizontally held wafer W. If an air flow flows along the surrounding member 2, a vortex flow is formed within the groove portions 23 and stays therein. Thus, mist can be captured, so that the flow of the mist to the outside of a cup body 1 can be suppressed. Accordingly, the adhesion of the mist to the wafer W can be suppressed.
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公开(公告)号：US20180047592A1
公开(公告)日：2018-02-15
申请号：US15671325
申请日：2017-08-08
CPC分类号： H01L21/6715 , B05C5/0258 , B05C11/08 , B05C11/1002 , B08B3/08 , B08B3/10 , G03F7/162 , G03F7/3021 , H01L21/0273 , H01L21/67051 , H01L21/67178
摘要： There is provided a guide member 3 in which an inclined surface 32 thereof is inclined downwardly outwards from an edge portion of a rear surface of a horizontally held wafer W; and a cylindrical surrounding member 2 which surrounds the wafer W and in which an upper peripheral portion thereof is inwardly extended obliquely upwards. Further, the surrounding member 2 has, at an inner surface side thereof, two groove portions 23 extended along an entire circumference and located above a height position of the horizontally held wafer W. If an air flow flows along the surrounding member 2, a vortex flow is formed within the groove portions 23 and stays therein. Thus, mist can be captured, so that the flow of the mist to the outside of a cup body 1 can be suppressed. Accordingly, the adhesion of the mist to the wafer W can be suppressed.
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公开(公告)号：US11508589B2
公开(公告)日：2022-11-22
申请号：US16139392
申请日：2018-09-24
IPC分类号： H01L21/67 , H01L21/02 , H01L21/687
摘要： When performing a liquid processing on a substrate W being rotated and removing a processing liquid by a cleaning liquid, a cleaning liquid nozzle 421 configured to discharge a cleaning liquid slantly with respect to a surface of the substrate W toward a downstream side of a rotational direction of the substrate W and a gas nozzle 411 configured to discharge a gas toward a position adjacent to a central portion side of the substrate W when viewed from a liquid arrival position R of the cleaning liquid are moved from the central portion side toward a peripheral portion side. A rotation number of the substrate is varied such that rotation number in a period during which the liquid arrival position R moves in the second region becomes smaller than a maximum rotation number in a period during which the liquid arrival position moves in the first region.
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公开(公告)号：US11079679B2
公开(公告)日：2021-08-03
申请号：US16656925
申请日：2019-10-18
摘要： A method includes forming a liquid puddle of a mixed solution of the diluting liquid and the processing liquid; rotating the substrate at a first rotation speed which allows the mixed solution located at a region facing an inner side than an edge of the liquid contact surface to stay between the liquid contact surface and the surface of the substrate and allows the mixed solution located at a region facing an outer side than the edge of the liquid contact surface to be diffused toward an edge of the substrate; rotating the substrate at a second rotation speed smaller than the first rotation speed after the substrate is rotated at the first rotation speed; and moving the nozzle toward the edge of the substrate while discharging the processing liquid from the discharge hole in a state that the substrate is rotated at the second rotation speed.
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公开(公告)号：US20200050111A1
公开(公告)日：2020-02-13
申请号：US16656925
申请日：2019-10-18
摘要： A method includes forming a liquid puddle of a mixed solution of the diluting liquid and the processing liquid; rotating the substrate at a first rotation speed which allows the mixed solution located at a region facing an inner side than an edge of the liquid contact surface to stay between the liquid contact surface and the surface of the substrate and allows the mixed solution located at a region facing an outer side than the edge of the liquid contact surface to be diffused toward an edge of the substrate; rotating the substrate at a second rotation speed smaller than the first rotation speed after the substrate is rotated at the first rotation speed; and moving the nozzle toward the edge of the substrate while discharging the processing liquid from the discharge hole in a state that the substrate is rotated at the second rotation speed.
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9.发明授权公开(公告)号：US10203605B2
公开(公告)日：2019-02-12
申请号：US15444671
申请日：2017-02-28
摘要： A development method includes: a development step of supplying a developing solution to a surface of a substrate for manufacturing a semiconductor device after undergoing formation of a resist film and exposure, to perform development; a first rotation step of, after the development step, increasing revolution speed of the substrate to rotate the substrate in a first rotational direction around a central axis so as to spin off and remove part of the developing solution from the substrate; and a second rotation step of, after the first rotation step, rotating the substrate in a second rotational direction reverse to the first rotational direction so as to spin off and remove the developing solution remaining on the substrate from the substrate.
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10.发明授权公开(公告)号：US10185220B2
公开(公告)日：2019-01-22
申请号：US15262489
申请日：2016-09-12
摘要： A substrate processing method includes steps of: supplying a developer onto a substrate surface from a discharge port while the substrate is rotated at a first rotation speed and a liquid contact surface faces the surface, and moving the nozzle while the liquid contact surface contacts with the developer so that a liquid film of the developer is formed on the surface; rotating the substrate at a second rotation speed slower than the first rotation speed, after the liquid film is formed, in a state where supply of the developer is stopped; rotating the substrate at a third rotation speed faster than the first rotation speed, after the substrate is rotated at the second rotation speed; and reducing rotation speed of the substrate to the second rotation speed or less, after the substrate is rotated at the third rotation speed, so that the liquid film is held on the surface.
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