公开(公告)号：US08796082B1

公开(公告)日：2014-08-05

申请号：US13774387

申请日：2013-02-22

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Pankaj B. Shah ,  H. Alfred Hung

IPC: H01L21/338

CPC classification number: H01L29/93 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/22 ,  H01L29/66174 ,  H01L29/872

Abstract: A preferred method of optimizing a Ga-nitride device material structure for a frequency multiplication device comprises: determining the amplitude and frequency of the input signal being multiplied in frequency; providing a Ga-nitride region on a substrate; determining the Al percentage composition and impurity doping in an AlGaN region positioned on the Ga-nitride region based upon the power level and waveform of the input signal and the desired frequency range in order to optimize power input/output efficiency; and selecting an orientation of N-face polar GaN or Ga-face polar GaN material relative to the AlGaN/GaN interface so as to orient the face of the GaN so as to optimize charge at the AlGaN/GaN interface. A preferred embodiment comprises an anti-serial Schottky varactor comprising: two Schottky diodes in anti-serial connection; each comprising at least one GaN layer designed based upon doping and thickness to improve the conversion efficiency.

Abstract translation: 优化用于倍频装置的Ga氮化物器件材料结构的优选方法包括：确定频率乘以的输入信号的幅度和频率; 在衬底上提供Ga氮化物区域; 基于输入信号的功率电平和波形以及期望的频率范围，确定位于Ga氮化物区域的AlGaN区域中的Al百分比组成和杂质掺杂，以优化功率输入/输出效率; 并且相对于AlGaN / GaN界面选择N面极化GaN或Ga面极化GaN材料的取向以便使GaN的表面定向，以便优化AlGaN / GaN界面处的电荷。 一个优选的实施方案包括抗串联肖特基变容二极管，其包含：反串联连接的两个肖特基二极管; 每个包括至少一个基于掺杂和厚度设计的GaN层以提高转换效率。