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公开(公告)号：US09506153B2
公开(公告)日：2016-11-29
申请号：US14488771
申请日：2014-09-17
Inventor： Melanie Will-Cole
CPC classification number: C23C28/042 , C04B41/5041 , C23C14/083 , C23C14/088 , C23C14/34 , C23C14/5806 , H01L21/02565 , H01L21/02579 , H01L21/02612
Abstract: An integrated heterostructure material is achieved by combining the attributes of two perovskite oxide film growth methods, RF sputtering and the metallo-organic solution deposition (MOSD) technique, in combination with employing a novel integrated material design consisting of a SrTO3 thin film layer which serves as a template to achieve a property enhanced, BST-based thin film overgrowth. In specific the integrated materials design consists of a thin RF sputtered SrTiO3 film (lower layer) which underlies a substantially thicker MOSD over-growth Mg doped BST-based film (upper layer). The inventive material design and combinational film growth fabrication method thereof enables beneficial critical material/device characteristics which include enhanced dielectric permittivity in concert with low loss; low leakage current density; high voltage breakdown strength; high tunability; controlled and optimized film microstructure; and a smooth surface morphology with minimal surface defects. The invention enables miniature highly (voltage) tunable frequency agile devices and/or charge mediated voltage controlled magnetic devices for RF/microwave communications, RADAR, and electronic warfare applications.
Abstract translation: 通过组合两种钙钛矿氧化物膜生长方法，RF溅射和金属有机溶液沉积（MOSD）技术的属性，结合采用由SrTO3薄膜层组成的新颖的一体化材料设计来实现集成的异质结构材料 作为模板来实现物性增强，基于BST的薄膜过度生长。 具体来说，集成材料设计由薄的RF溅射的SrTiO 3膜（下层）构成，其基本上是基本上更厚的MOSD过度生长的Mg掺杂的基于BST的膜（上层）。 本发明的材料设计和组合薄膜生长制造方法能够实现有益的关键材料/器件特性，其包括与低损耗一致的增强的介电常数; 低漏电流密度; 高压击穿强度; 高可调性; 控制和优化的薄膜微观结构; 和具有最小表面缺陷的光滑表面形态。 本发明实现了用于RF /微波通信，RADAR和电子战应用的微型高度（电压）可调频率的敏捷设备和/或电荷介质的电压控制磁性设备。
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公开(公告)号：US20160076152A1
公开(公告)日：2016-03-17
申请号：US14488771
申请日：2014-09-17
Inventor： Melanie Will-Cole
CPC classification number: C23C28/042 , C04B41/5041 , C23C14/083 , C23C14/088 , C23C14/34 , C23C14/5806 , H01L21/02565 , H01L21/02579 , H01L21/02612
Abstract: An integrated heterostructure material is achieved by combining the attributes of two perovskite oxide film growth methods, RF sputtering and the metallo-organic solution deposition (MOSD) technique, in combination with employing a novel integrated material design consisting of a SrTO3 thin film layer which serves as a template to achieve a property enhanced, BST-based thin film overgrowth. In specific the integrated materials design consists of a thin RF sputtered SrTiO3 film (lower layer) which underlies a substantially thicker MOSD over-growth Mg doped BST-based film (upper layer). The inventive material design and combinational film growth fabrication method thereof enables beneficial critical material/device characteristics which include enhanced dielectric permittivity in concert with low loss; low leakage current density; high voltage breakdown strength; high tunability; controlled and optimized film microstructure; and a smooth surface morphology with minimal surface defects. The invention enables miniature highly (voltage) tunable frequency agile devices and/or charge mediated voltage controlled magnetic devices for RF/microwave communications, RADAR, and electronic warfare applications.
Abstract translation: 通过组合两种钙钛矿氧化物膜生长方法，RF溅射和金属有机溶液沉积（MOSD）技术的属性，结合采用由SrTO3薄膜层组成的新颖的一体化材料设计来实现集成的异质结构材料 作为模板来实现物性增强，基于BST的薄膜过度生长。 具体来说，集成材料设计由薄的RF溅射的SrTiO 3膜（下层）构成，其基本上是基本上更厚的MOSD过度生长的Mg掺杂的基于BST的膜（上层）。 本发明的材料设计和组合薄膜生长制造方法能够实现有益的关键材料/器件特性，其包括与低损耗一致的增强的介电常数; 低漏电流密度; 高压击穿强度; 高可调性; 控制和优化的薄膜微观结构; 和具有最小表面缺陷的光滑表面形态。 本发明实现了用于RF /微波通信，RADAR和电子战应用的微型高度（电压）可调频率的敏捷设备和/或电荷介质的电压控制磁性设备。
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