Light-emitting matrix array display devices with light sensing elements
    1.
    发明申请
    Light-emitting matrix array display devices with light sensing elements 有权
    具有光敏元件的发光矩阵阵列显示装置

    公开(公告)号:US20010052597A1

    公开(公告)日:2001-12-20

    申请号:US09863566

    申请日:2001-05-23

    Abstract: A display device has an array of pixels (10) comprising light emitting display elements (20), for example EL elements, carried on a substrate (50) and associated light sensing elements (40) responsive to light emitted by the display elements. The light sensing elements each comprise a gated photosensitive thin film device such as a TFT structure or a lateral gated pin device having a semiconductor layer (52) with contact regions (53, 54) laterally spaced on the substrate and separated by a gate controlled region (55). A part of the associated display element (20) extends over the gate controlled region with an electrode (70) of the display element serving as the gate of the photosensitive device thereby ensuring good optical coupling between the display element and the photosensitive device and enabling the gate to be appropriately biased. Such an arrangement enables, for example, the provision of electro-optic feedback control in the pixel in comparatively simple manner.

    Abstract translation: 显示装置具有包括发光显示元件(20)的像素阵列(10),所述发光显示元件(20)例如EL元件被承载在基板(50)上并响应于由显示元件发射的光而相关联的光感测元件(40)。 光感测元件各自包括门控感光薄膜器件,例如TFT结构或侧向门控引脚器件,其具有半导体层(52),该接触区域(53,54)在衬底上横向间隔开并由栅极控制区域 (55)。 相关联的显示元件(20)的一部分在栅极控制区域上延伸,显示元件的电极(70)用作感光器件的栅极,从而确保显示元件和感光器件之间良好的光学耦合, 门被适当偏见。 这种布置使得能够例如以相对简单的方式在像素中提供电光反馈控制。

    Matrix array display devices with light sensing elements and associated storage capacitors
    2.
    发明申请
    Matrix array display devices with light sensing elements and associated storage capacitors 失效
    具有光敏元件和相关存储电容器的矩阵阵列显示装置

    公开(公告)号:US20010055008A1

    公开(公告)日:2001-12-27

    申请号:US09862280

    申请日:2001-05-22

    Abstract: A matrix array display device has an array of pixels (10) on a substrate (50) which each have a display element (20), for example an electroluminescent display element, and associated control circuit including a storage capacitor (36) and a light sensing element (40) connected thereto for regulating charge stored on the capacitor and responsive, for example, to light emitted from the display element so as to regulate operation of the display element. The light sensing elements (40) comprise thin film semiconductor devices each having a strip of semiconductor material (52) with laterally-spaced, doped, contact regions (53, 54) and the associated storage capacitor (36) is formed by a conductive layer (58) extending substantially transversely of the strip over one contact region with intervening dielectric material. A predetermined relationship between the storage capacitor and photosensitive device characteristics is then ensured even though dimensional variations in component layers may occur due to manufacturing tolerances. Preferably, the photosensitive device comprises a gated device whose gate extends over the semiconductor strip region intermediate the contact regions. The gate dielectric and storage capacitor dielectric may comprise parts of a common layer (56). Alternatively, the conductive layer may be provided at the side of the strip opposite the gate and used also as a shield for ambient light.

    Abstract translation: 矩阵阵列显示装置具有在基板(50)上的像素阵列(10),每个像素阵列具有显示元件(20),例如电致发光显示元件,以及包括存储电容器(36)和相关的控制电路 感测元件(40),用于调节存储在电容器上的电荷,并且例如响应于从显示元件发射的光,以调节显示元件的操作。 光感测元件(40)包括薄膜半导体器件,每个薄膜半导体器件具有带横向间隔的掺杂的接触区域(53,54)的半导体材料带(52),并且相关联的存储电容器(36)由导电层 (58)在带有中间介电材料的一个接触区域上基本横向延伸。 即使由于制造公差而可能发生组件层的尺寸变化,也可以确保存储电容器和感光器件特性之间的预定关系。 优选地,感光装置包括门控装置,其栅极在接触区域之上的半导体条带区域上延伸。 栅介质和存储电容器电介质可以包括公共层(56)的部分。 或者,导电层可以设置在与栅极相对的条的一侧,并且还用作环境光的屏蔽。

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