公开(公告)号：US10475738B2

公开(公告)日：2019-11-12

申请号：US15391822

申请日：2016-12-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kung-Hong Lee ,  Mu-Kai Tsai ,  Chung-Hsing Lin

IPC: H01L23/522 ,  H01L49/02 ,  H01L27/088 ,  H01L27/092 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/78

Abstract: A semiconductor device preferably includes: a first metal-oxide semiconductor (MOS) transistor on a substrate; a first ferroelectric (FE) layer connected to the first MOS transistor; a second MOS transistor on the substrate; and a second FE layer connected to the second MOS transistor. Preferably, the first FE layer and the second FE layer include different capacitance.

公开(公告)号：US20180182860A1

公开(公告)日：2018-06-28

申请号：US15391822

申请日：2016-12-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kung-Hong Lee ,  Mu-Kai Tsai ,  Chung-Hsing Lin

IPC: H01L29/51 ,  H01L49/02 ,  H01L27/088 ,  H01L27/092 ,  H01L23/522 ,  H01L23/532

Abstract: A semiconductor device preferably includes: a first metal-oxide semiconductor (MOS) transistor on a substrate; a first ferroelectric (FE) layer connected to the first MOS transistor; a second MOS transistor on the substrate; and a second FE layer connected to the second MOS transistor. Preferably, the first FE layer and the second FE layer include different capacitance.