公开(公告)号：US10804418B2

公开(公告)日：2020-10-13

申请号：US16283895

申请日：2019-02-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Guo-Zhong Xing ,  Cheng-Yu Hsieh ,  Chien-En Hsu

IPC: H01L31/0352 ,  H01L31/028 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/103

Abstract: A photodetector includes a substrate, at least one nanowire and a cladding layer. The at least one nanowire is disposed on the substrate and has a semiconductor core. The cladding layer is disposed on sidewalls of the semiconductor core and includes an epitaxial semiconductor film in contact with the sidewalls of the semiconductor core, a metal film disposed on the outside of the epitaxial semiconductor film and a high-k material layer disposed on the outside of metal film.

公开(公告)号：US20190181119A1

公开(公告)日：2019-06-13

申请号：US15834519

申请日：2017-12-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Guo-Zhong Xing ,  Chien-En Hsu

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/48 ,  H01L25/00

Abstract: A stacked semiconductor device is provided, including a first semiconductor structure, a second semiconductor structure and a bonding structure disposed between the first and second semiconductor structures. The first semiconductor structure and the second semiconductor structure include first conductive pillars and second conductive pillars, respectively. The first semiconductor structure is stacked above the second semiconductor structure. The bonding structure contacts the first conductive pillars and the second conductive pillars, wherein the bonding structure comprises conductive paths for electrically connecting the first conductive pillars and the second conductive pillars.