公开(公告)号：US09847392B1

公开(公告)日：2017-12-19

申请号：US15291058

申请日：2016-10-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Ping Huang ,  Yu-Jen Liu ,  Hsin-Kai Chiang

IPC: H01L21/336 ,  H01L29/10 ,  H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L29/16 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/1083 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7843

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; forming a shallow trench isolation (STI) around the fin-shaped structure; forming a gate structure on the fin-shaped structure and the STI and the fin-shaped structure directly under the gate structure includes a first epitaxial layer; forming a source region having first conductive type adjacent to one side of the gate structure; and forming a first drain region having a second conductive type adjacent to another side of the gate structure.