公开(公告)号：US20250142895A1

公开(公告)日：2025-05-01

申请号：US18523894

申请日：2023-11-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Pei-Lun Jheng ,  Po-Jui Chiang ,  Chao-Sheng Cheng ,  Ming-Jen Chang ,  Ko-Chin Chang ,  Yu-Ming Liu

IPC: H01L29/423 ,  H01L29/66 ,  H10B41/30

Abstract: An embedded flash memory structure, including a semiconductor substrate, an erase gate on the semiconductor substrate, two floating gates respectively at two sides of the erase gate on the semiconductor substrate, two word lines respectively at outer sides of the two floating gates, and two metal control gates respectively on the two floating gates, wherein a sacrificial layer is at at least one side of the metal control gate, and the sacrificial layer is between the metal control gate and the erase gate or between the metal control gate and the word line.

公开(公告)号：US11366604B1

公开(公告)日：2022-06-21

申请号：US17210545

申请日：2021-03-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ko-Chin Chang ,  Ming-Jen Chang ,  Cheng-Hsiao Lai ,  Yu-Syuan Lin ,  Chi-Fa Lien ,  Ying-Ting Lin ,  Yung-Tsai Hsu

IPC: G06F3/06 ,  G11C16/10 ,  G11C16/16 ,  G11C16/28 ,  G11C16/22

Abstract: A physically unclonable function includes a flash memory, a current comparator and a controller. The flash memory includes a plurality of memory cells. A method of operating the physically unclonable function circuit includes the controller setting the plurality of memory cells to an initial data state, the controller setting the plurality of memory cells between the initial data state and an adjacent data state of the initial data state, the current comparator reading a first current from a memory cell in a first section of the plurality of the memory cells, the current comparator reading a second current from a memory cell in a second section of the plurality of the memory cells, and the current comparator outputting a random bit according to the first current and the second current.