公开(公告)号：US20250142895A1

公开(公告)日：2025-05-01

申请号：US18523894

申请日：2023-11-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Pei-Lun Jheng ,  Po-Jui Chiang ,  Chao-Sheng Cheng ,  Ming-Jen Chang ,  Ko-Chin Chang ,  Yu-Ming Liu

IPC: H01L29/423 ,  H01L29/66 ,  H10B41/30

Abstract: An embedded flash memory structure, including a semiconductor substrate, an erase gate on the semiconductor substrate, two floating gates respectively at two sides of the erase gate on the semiconductor substrate, two word lines respectively at outer sides of the two floating gates, and two metal control gates respectively on the two floating gates, wherein a sacrificial layer is at at least one side of the metal control gate, and the sacrificial layer is between the metal control gate and the erase gate or between the metal control gate and the word line.

公开(公告)号：US11658227B2

公开(公告)日：2023-05-23

申请号：US17569855

申请日：2022-01-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Pei-Lun Jheng ,  Chao-Sheng Cheng

IPC: H01L29/49 ,  H01L29/423 ,  H01L21/8234 ,  H01L29/45 ,  H01L27/088

CPC classification number: H01L29/4933 ,  H01L21/82345 ,  H01L21/823443 ,  H01L27/088 ,  H01L29/42372 ,  H01L29/456

Abstract: A method for manufacturing a semiconductor structure is provided. The method comprises the following steps. A first silicon-containing gate electrode is formed on a semiconductor substrate in a first region. A second silicon-containing gate electrode is formed on the semiconductor substrate in a second region. A gate silicide element is formed on an upper surface of the first silicon-containing gate electrode. A source silicide element and a drain silicide element are formed on the semiconductor substrate on opposing sides of the second silicon-containing gate electrode respectively. The gate silicide element, the source silicide element and the drain silicide element are formed simultaneously.

公开(公告)号：US11251283B2

公开(公告)日：2022-02-15

申请号：US16832945

申请日：2020-03-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Pei-Lun Jheng ,  Chao-Sheng Cheng

IPC: H01L29/45 ,  H01L29/49 ,  H01L29/423 ,  H01L21/8234 ,  H01L27/088

Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a semiconductor substrate, a silicon-containing gate electrode, and at least two gate silicide strips. The silicon-containing gate electrode is on the semiconductor substrate. The at least two gate silicide strips are on an upper surface of the silicon-containing gate electrode.