公开(公告)号：US20200135274A1

公开(公告)日：2020-04-30

申请号：US16173406

申请日：2018-10-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： LIANG YI ,  ZHAOBING LI ,  CHI REN

IPC: G11C16/04 ,  H01L27/11517 ,  G11C13/00 ,  H01L45/00

Abstract: A structure of nonvolatile memory device includes a substrate, having a logic device region and a memory cell region. A first gate structure for a low-voltage transistor is disposed over the substrate in the logic device region, wherein the first gate structure comprises a single-layer polysilicon. A second gate structure for a memory cell is disposed over the substrate in the memory cell region. The second gate structure includes a gate insulating layer on the substrate. A floating gate layer is disposed on the gate insulating layer, wherein the floating gate layer comprises a first polysilicon layer and a second polysilicon layer as a stacked structure. A memory dielectric layer is disposed on the floating gate layer. A control gate layer is disposed on the memory dielectric layer, wherein the control gate layer and the single-layer polysilicon are originated from a preliminary polysilicon layer in same.