公开(公告)号：US20180006038A1

公开(公告)日：2018-01-04

申请号：US15682558

申请日：2017-08-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shu-Wei Yeh ,  Tsung-Hsun Wu ,  Chih-Ming Su ,  Zhi-Xian Chou

IPC: H01L27/11 ,  G11C11/412 ,  H01L27/02 ,  H01L29/78

CPC classification number: H01L27/1104 ,  G11C11/412 ,  H01L27/0207 ,  H01L28/00 ,  H01L29/785

Abstract: A layout pattern of a static random access memory includes a pull-up device, a first pull-down device, a second pull-up device, a second pull-down device, a first pass gate device, a second pass gate device, a third pass gate device and a fourth pass gate device disposed on a substrate. A plurality of fin structures is disposed on the substrate, the fin structures including at least one first fin structure and at least one second fin structure. A step-shaped structure is disposed on the substrate, including a first part, a second part and a bridge part. A first extending contact feature crosses over the at least one first fin structure and the at least one second fin structure.

公开(公告)号：US09780099B1

公开(公告)日：2017-10-03

申请号：US15233961

申请日：2016-08-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shu-Wei Yeh ,  Tsung-Hsun Wu ,  Chih-Ming Su ,  Zhi-Xian Chou

IPC: G11C11/04 ,  H01L27/11 ,  H01L29/78 ,  H01L27/02 ,  G11C11/412

CPC classification number: H01L27/1104 ,  G11C11/412 ,  H01L27/0207 ,  H01L28/00 ,  H01L29/785

Abstract: A layout pattern of a static random access memory includes a pull-up device, a first pull-down device, a second pull-up device, a second pull-down device, a first pass gate device, a second pass gate device, a third pass gate device and a fourth pass gate device disposed on a substrate. A plurality of fin structures is disposed on the substrate, the fin structures including at least one first fin structure and at least one second fin structure. A step-shaped structure is disposed on the substrate, including a first part, a second part and a bridge part. A first extending contact feature crosses over the at least one first fin structure and the at least one second fin structure.