公开(公告)号：US20210210628A1

公开(公告)日：2021-07-08

申请号：US17207751

申请日：2021-03-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Han Wu ,  Hsin-Yu Chen ,  Chun-Hao Lin ,  Shou-Wei Hsieh ,  Chih-Ming Su ,  Yi-Ren Chen ,  Yuan-Ting Chuang

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/417

Abstract: A semiconductor device includes a fin-shaped structure on the substrate, a shallow trench isolation (STI) around the fin-shaped structure, a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure, a second gate structure on the STI, and a third gate structure on the SDB structure. Preferably, a width of the third gate structure is greater than a width of the second gate structure and each of the first gate structure, the second gate structure, and the third gate structure includes a U-shaped high-k dielectric layer, a U-shaped work function metal layer, and a low-resistance metal layer.

公开(公告)号：US10529723B2

公开(公告)日：2020-01-07

申请号：US15186548

申请日：2016-06-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shu-Wei Yeh ,  Tsung-Hsun Wu ,  Chih-Ming Su ,  Yu-Tse Kuo

IPC: H01L27/11 ,  H01L27/02

Abstract: A layout pattern of a static random access memory includes a pull-up device, a first pull-down device, a second pull-up device, a second pull-down device, a first pass gate device and a second pass gate device disposed on a substrate. A plurality of fin structures are disposed on the substrate, and the fin structures include at least one first fin structure and at least one second fin structure. A J-shaped gate structure is disposed on the substrate, including a long part, a short part and a bridge part. At least one first extending contact structure crosses over the at least one first fin structure and the at least one second fin structure, wherein the at least one first extending contact structure does not overlap with the bridge part of the J-shaped gate structure.

公开(公告)号：US20170323894A1

公开(公告)日：2017-11-09

申请号：US15186548

申请日：2016-06-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shu-Wei Yeh ,  Tsung-Hsun Wu ,  Chih-Ming Su ,  Yu-Tse Kuo

IPC: H01L27/11 ,  H01L29/10 ,  H01L27/088 ,  H01L27/02 ,  H01L23/532 ,  H01L29/423 ,  H01L23/528

CPC classification number: H01L27/1104 ,  G11C8/14 ,  G11C11/412 ,  G11C11/418 ,  G11C14/0054 ,  H01L27/0207 ,  H01L27/0924

Abstract: A layout pattern of a static random access memory includes a pull-up device, a first pull-down device, a second pull-up device, a second pull-down device, a first pass gate device and a second pass gate device disposed on a substrate. A plurality of fin structures are disposed on the substrate, and the fin structures include at least one first fin structure and at least one second fin structure. A J-shaped gate structure is disposed on the substrate, including a long part, a short part and a bridge part. At least one first extending contact structure crosses over the at least one first fin structure and the at least one second fin structure, wherein the at least one first extending contact structure does not overlap with the bridge part of the J-shaped gate structure.

公开(公告)号：US12249649B2

公开(公告)日：2025-03-11

申请号：US17207751

申请日：2021-03-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Han Wu ,  Hsin-Yu Chen ,  Chun-Hao Lin ,  Shou-Wei Hsieh ,  Chih-Ming Su ,  Yi-Ren Chen ,  Yuan-Ting Chuang

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/417

Abstract: A semiconductor device includes a fin-shaped structure on the substrate, a shallow trench isolation (STI) around the fin-shaped structure, a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure, a second gate structure on the STI, and a third gate structure on the SDB structure. Preferably, a width of the third gate structure is greater than a width of the second gate structure and each of the first gate structure, the second gate structure, and the third gate structure includes a U-shaped high-k dielectric layer, a U-shaped work function metal layer, and a low-resistance metal layer.

公开(公告)号：US10991824B2

公开(公告)日：2021-04-27

申请号：US16252715

申请日：2019-01-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Han Wu ,  Hsin-Yu Chen ,  Chun-Hao Lin ,  Shou-Wei Hsieh ,  Chih-Ming Su ,  Yi-Ren Chen ,  Yuan-Ting Chuang

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/417

Abstract: A semiconductor device includes: a fin-shaped structure on the substrate; a shallow trench isolation (STI) around the fin-shaped structure; a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure; a second gate structure on the STI; and a third gate structure on the SDB structure, wherein a width of the third gate structure is greater than a width of the second gate structure.

公开(公告)号：US20180006038A1

公开(公告)日：2018-01-04

申请号：US15682558

申请日：2017-08-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shu-Wei Yeh ,  Tsung-Hsun Wu ,  Chih-Ming Su ,  Zhi-Xian Chou

IPC: H01L27/11 ,  G11C11/412 ,  H01L27/02 ,  H01L29/78

CPC classification number: H01L27/1104 ,  G11C11/412 ,  H01L27/0207 ,  H01L28/00 ,  H01L29/785

Abstract: A layout pattern of a static random access memory includes a pull-up device, a first pull-down device, a second pull-up device, a second pull-down device, a first pass gate device, a second pass gate device, a third pass gate device and a fourth pass gate device disposed on a substrate. A plurality of fin structures is disposed on the substrate, the fin structures including at least one first fin structure and at least one second fin structure. A step-shaped structure is disposed on the substrate, including a first part, a second part and a bridge part. A first extending contact feature crosses over the at least one first fin structure and the at least one second fin structure.

公开(公告)号：US09780099B1

公开(公告)日：2017-10-03

申请号：US15233961

申请日：2016-08-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shu-Wei Yeh ,  Tsung-Hsun Wu ,  Chih-Ming Su ,  Zhi-Xian Chou

IPC: G11C11/04 ,  H01L27/11 ,  H01L29/78 ,  H01L27/02 ,  G11C11/412

CPC classification number: H01L27/1104 ,  G11C11/412 ,  H01L27/0207 ,  H01L28/00 ,  H01L29/785

Abstract: A layout pattern of a static random access memory includes a pull-up device, a first pull-down device, a second pull-up device, a second pull-down device, a first pass gate device, a second pass gate device, a third pass gate device and a fourth pass gate device disposed on a substrate. A plurality of fin structures is disposed on the substrate, the fin structures including at least one first fin structure and at least one second fin structure. A step-shaped structure is disposed on the substrate, including a first part, a second part and a bridge part. A first extending contact feature crosses over the at least one first fin structure and the at least one second fin structure.