公开(公告)号：US20230369460A1

公开(公告)日：2023-11-16

申请号：US17835977

申请日：2022-06-09

Applicant: United Microelectronics Corp.

Inventor： Kuang-Hsiu Chen ,  Wei-Chung Sun ,  Chao Nan Chen ,  Chun-Wei Yu ,  Kuan Hsuan Ku ,  Shao-Wei Wang

IPC: H01L29/66

CPC classification number: H01L29/66636 ,  H01L29/66575 ,  H01L29/66446 ,  H01L29/66795

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The manufacturing method of the semiconductor structure includes the following. A gate structure is formed on a substrate. A tilt implanting process is performed to implant group IV elements into the substrate to form a doped region, and the doped region is located on two sides of the gate structure and partially located under the gate structure. A part of the substrate on two sides of the gate structure is removed to form a first recess. A cleaning process is performed on the surface of the first recess. A wet etching process is performed on the first recess to form a second recess. A semiconductor layer is formed in the second recess.

公开(公告)号：US20250072060A1

公开(公告)日：2025-02-27

申请号：US18943871

申请日：2024-11-11

Applicant: United Microelectronics Corp.

Inventor： Kuang-Hsiu Chen ,  Wei-Chung Sun ,  Chao Nan Chen ,  Chun-Wei Yu ,  Kuan Hsuan Ku ,  Shao-Wei Wang

IPC: H01L29/66

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The manufacturing method of the semiconductor structure includes the following. A gate structure is formed on a substrate. A tilt implanting process is performed to implant group IV elements into the substrate to form a doped region, and the doped region is located on two sides of the gate structure and partially located under the gate structure. A part of the substrate on two sides of the gate structure is removed to form a first recess. A cleaning process is performed on the surface of the first recess. A wet etching process is performed on the first recess to form a second recess. A semiconductor layer is formed in the second recess.