公开(公告)号：US10128366B2

公开(公告)日：2018-11-13

申请号：US15890303

申请日：2018-02-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ying Lin ,  Kuan Hsuan Ku ,  I-Cheng Hu ,  Chueh-Yang Liu ,  Shui-Yen Lu ,  Yu Shu Lin ,  Chun Yao Yang ,  Yu-Ren Wang ,  Neng-Hui Yang

IPC: H01L21/00 ,  H01L29/78 ,  H01L21/225 ,  H01L29/06 ,  H01L21/768 ,  H01L21/311 ,  H01L29/417 ,  H01L29/165 ,  H01L27/092

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed partially within the semiconductor substrate. The gate structure includes a gate dielectric layer formed over the semiconductor substrate, a gate electrode formed over the gate dielectric layer, and a spacer formed on side surfaces of the gate dielectric layer and the gate electrode. A laterally extending portion of the epitaxial structure extends laterally at an area below a top surface of the semiconductor substrate in a direction toward an area below the gate structure. A lateral end of the laterally extending portion is below the spacer.

公开(公告)号：US20230369460A1

公开(公告)日：2023-11-16

申请号：US17835977

申请日：2022-06-09

Applicant: United Microelectronics Corp.

Inventor： Kuang-Hsiu Chen ,  Wei-Chung Sun ,  Chao Nan Chen ,  Chun-Wei Yu ,  Kuan Hsuan Ku ,  Shao-Wei Wang

IPC: H01L29/66

CPC classification number: H01L29/66636 ,  H01L29/66575 ,  H01L29/66446 ,  H01L29/66795

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The manufacturing method of the semiconductor structure includes the following. A gate structure is formed on a substrate. A tilt implanting process is performed to implant group IV elements into the substrate to form a doped region, and the doped region is located on two sides of the gate structure and partially located under the gate structure. A part of the substrate on two sides of the gate structure is removed to form a first recess. A cleaning process is performed on the surface of the first recess. A wet etching process is performed on the first recess to form a second recess. A semiconductor layer is formed in the second recess.

公开(公告)号：US20250072060A1

公开(公告)日：2025-02-27

申请号：US18943871

申请日：2024-11-11

Applicant: United Microelectronics Corp.

Inventor： Kuang-Hsiu Chen ,  Wei-Chung Sun ,  Chao Nan Chen ,  Chun-Wei Yu ,  Kuan Hsuan Ku ,  Shao-Wei Wang

IPC: H01L29/66

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The manufacturing method of the semiconductor structure includes the following. A gate structure is formed on a substrate. A tilt implanting process is performed to implant group IV elements into the substrate to form a doped region, and the doped region is located on two sides of the gate structure and partially located under the gate structure. A part of the substrate on two sides of the gate structure is removed to form a first recess. A cleaning process is performed on the surface of the first recess. A wet etching process is performed on the first recess to form a second recess. A semiconductor layer is formed in the second recess.