公开(公告)号：US20240168084A1

公开(公告)日：2024-05-23

申请号：US18085560

申请日：2022-12-20

Applicant: United Microelectronics Corp.

Inventor： Jih-Shun Chiang ,  Wen-Chun Chang ,  Wen-Hsiung Ko ,  Sung-Nien Kuo ,  Kuan-Cheng Su

IPC: G01R31/28 ,  H01L23/34 ,  H01L23/528 ,  H01L23/532

CPC classification number: G01R31/2875 ,  H01L23/345 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/5329

Abstract: A semiconductor structure is provided. The semiconductor structure includes at least one metal gate structure and a device to be tested. The metal gate structure is disposed on a substrate. The device to be tested is disposed on the metal gate structure and electrically separated from the metal gate structure. The device to be tested is heated by a heat generated when the metal gate structure is applied with a voltage.