THREE-DIMENSIONAL INTEGRATED CIRCUIT STRUCTURE

    公开(公告)号:US20240413136A1

    公开(公告)日:2024-12-12

    申请号:US18223539

    申请日:2023-07-18

    Abstract: The present invention provides a 3D integrated circuit structure formed by stacking semiconductor structures. The semiconductor structures form a multi-die heterogeneous 3D packaging by direct bonding the bonding pads of re-distribution layers. The same or different dies are used to produce the semiconductor structures through the back-end packaging process, and then hybrid bonding technology is used to stack and interconnect the semiconductor structures. The position of the bonding pad can be redefined by re-distribution layer, thereby overcoming the limitations of chip bonding pad position, chip size and quantity.

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