公开(公告)号：US11424331B1

公开(公告)日：2022-08-23

申请号：US17348790

申请日：2021-06-16

Applicant: University of Electronic Science and Technology of China

Inventor： Ming Qiao ,  Dingxiang Ma ,  Zhengkang Wang ,  Bo Zhang

IPC: H01L29/40 ,  H01L29/78 ,  H01L29/66

Abstract: A power semiconductor device for improving a hot carrier injection is provided. A drain field plate is introduced at one side of a drain in a dielectric trench and connected to a drain electrode, having identical electric potential, thereby improving hole injection effects at a drain side of the dielectric trench. A shield gate field plate is introduced at one side of a source electrode in the dielectric trench and is connected to the source electrode or ground, thereby forming a shield gate. While decreasing gate drain parasitic capacitance Cgd, electron injection effects at a source electrode side of the dielectric trench are improved. With a trench etching method, the improvement of hot carrier injection can also be achieved by making carriers avoid a side wall of the dielectric trench on a path.