公开(公告)号：US10340373B2

公开(公告)日：2019-07-02

申请号：US15600795

申请日：2017-05-22

Applicant: University of Electronic Science and Technology of China

Inventor： Xiaorong Luo ,  Gaoqiang Deng ,  Kun Zhou ,  Qing Liu ,  Linhua Huang ,  Tao Sun ,  Bo Zhang

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/74 ,  H01L29/739 ,  H01L29/861

Abstract: The present invention relates to the technical field of the power semiconductor device relates to a reverse conducting insulated gate bipolar transistor (RC-IGBT). The RC-IGBT comprises a P-type region, an N-type emitter region, a P-type body contact region, a dielectric trench, a collector region, and an electrical filed cutting-off region. The beneficial effect of the present invention is that, when compared with traditional RC-IGBT, the IGBT of the present invention can eliminate negative resistance effect and effectively improve the performance of forward and reverse conduction.