公开(公告)号：US11888022B2

公开(公告)日：2024-01-30

申请号：US17744779

申请日：2022-05-16

Applicant: University of Electronic Science and Technology of China

Inventor： Wentong Zhang ,  Ning Tang ,  Ke Zhang ,  Nailong He ,  Ming Qiao ,  Zhaoji Li ,  Bo Zhang

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78

CPC classification number: H01L29/0607 ,  H01L29/407 ,  H01L29/66325 ,  H01L29/66681 ,  H01L29/7394 ,  H01L29/7823 ,  H01L29/7824

Abstract: An SOI lateral homogenization field high voltage power semiconductor device, and a manufacturing method and application thereof are provided. The device includes a type I conductive semiconductor substrate, a type II conductive drift region, a type I field clamped layer, type I and type II conductive well regions, the first dielectric oxide layer forming a field oxide layer, the second dielectric oxide layer forming a gate oxide layer, a type II conductive buried dielectric layer, a type II conductive source heavily doped region, a type II conductive drain heavily doped region. The first dielectric oxide layer and the floating field plate polysilicon electrodes form a vertical floating field plate distributed throughout the type II conductive drift region to form a vertical floating equipotential field plate array. When the device is in on-state, high doping concentration can be realized by the full-region depletion effect form the vertical field plate arrays.