摘要:
Two bridge type transducers are coupled in series with their outputs each driving one of a pair of differential amplifiers, with the outputs tied together in a push-pull configuration. In further embodiments, push-pull operation is obtained by matching amplifier gain components and using current mirrors. Lower voltage operation may be achieved by simple diode level shifting of the transducer outputs. In one embodiment, the transducers comprise Hall effect sensors.
摘要:
A Hall-effect device with a merged and/or non-merged complementary structure in order to cancel stress induced offsets includes an n-type epitaxial Hall element and a p-type Hall element. The p-type Hall element can be implanted directly on top of the n-type epitaxial Hall element. The merged Hall elements can be biased in parallel to provide a zero-bias depletion layer throughout for isolation. The output of the p-type Hall element can be connected to the geometrically corresponding output of the n-type epitaxial Hall element through a suitable resistance. The output signal can be taken at the outputs of the n-type element. The Hall-effect device can be constructed utilizing standard processes.
摘要:
A voltage regulator operable as a voltage follower while a fusible link is closed and in a regulated voltage mode when the fusible link becomes open. The voltage regulator can be formed on monolithic semiconductor chips. Patterned thin films including aluminum and nickel-iron, and aluminum and polycrystalline silicon, comprise the fusible link. With the fusible link closed, the voltage regulator output is an analog of positive polarity variable voltage levels at the regulator input. Systems powered by the voltage regulator are allowed to be programmed until system programming requiring variable voltage levels is complete. Afterwards, a negative polarity voltage is applied to the regulator input causing a large current to pass through the fusible link once the system programming is completed. Current thereby causes the fusible link to become opened and enables the voltage regulator to begin operating at a regulated voltage in response to positive voltage input.
摘要:
A Hall element is provided with a segmented field plate. Dynamic bias control is applied to the segments of the field plate. In one embodiment, a feedback signal is derived from an amplified output of the Hall element. The feedback signal is applied to the segments of the field plate in order to control sheet conductivity in specific localized areas. In one embodiment, a metal field plate is split into four segments along lines between bias and sense contacts of the Hall element. Opposing diagonal segments are electrically connected.
摘要:
A method of determining antimicrobial activity of an agent can include providing a well, wherein the well contains at least one antimicrobial agent, the well further including at least two electrodes. A sample of a microbe can be added into the well and a voltage pulsed between the electrodes. An electrical property can be sampled and recorded. In another aspect, a method of identifying at least one microbe includes taking a sample containing the at least one microbe, isolating the at least one microbe from the sample, dividing the at least one microbe into a at least one well, wherein each well contains at least one antimicrobial agent and at least two electrodes. A voltage is pulsed between the at least two electrodes, an electrical property is sampled during the pulsing and recorded. In another aspect, a diagnostic device for detecting at least one microbe is presented.
摘要:
A Hall-effect device with a merged and/or non-merged complementary structure in order to cancel stress induced offsets includes an n-type epitaxial Hall element and a p-type Hall element. The p-type Hall element can be implanted directly on top of the n-type epitaxial Hall element. The merged Hall elements can be biased in parallel to provide a zero-bias depletion layer throughout for isolation. The output of the p-type Hall element can be connected to the geometrically corresponding output of the n-type epitaxial Hall element through a suitable resistance. The output signal can be taken at the outputs of the n-type element. The Hall-effect device can be constructed utilizing standard processes.
摘要:
A plurality of bridge transducers are provided in a dual arrangement. An output terminal from each transducer is coupled to differential inputs of an amplifier. Each of the other outputs from the transducers are respectively coupled together and used to control a bias for dual active loads. The transducers may be implemented within monolithic silicon integrated circuits, using bipolar technology with Hall effect, magnetoresistive or piezoresistive sensing elements for the bridge. A single Hall effect transducer may be coupled to the inputs of the differential amplifier, and a center tap terminal used to control a bias for dual active loads.
摘要:
A method of determining antimicrobial activity of an agent can include providing a well, wherein the well contains at least one antimicrobial agent, the well further including at least two electrodes. A sample of a microbe can be added into the well and a voltage pulsed between the electrodes. An electrical property can be sampled and recorded. In another aspect, a method of identifying at least one microbe includes taking a sample containing the at least one microbe, isolating the at least one microbe from the sample, dividing the at least one microbe into a at least one well, wherein each well contains at least one antimicrobial agent and at least two electrodes. A voltage is pulsed between the at least two electrodes, an electrical property is sampled during the pulsing and recorded. In another aspect, a diagnostic device for detecting at least one microbe is presented.
摘要:
A flow sensor transducer can measure fluid flow rates as a fluid flows though a channel and under an air bridge. Resistive thermal devices (RTDs) and a heater are on top of the air bridge with two RTDs upstream of the heater and two downstream. The RTDs can be connected in a Wheatstone bridge configuration. A magnetoresistive material that changes its electrical resistance based on its temperature can be used to form the RTDs. The temperature response of magnetoresistive materials, however, can change due to magnetic fields and to the material's magnetic history. Forming the RTDs into a dual spiral structure minimizes the effect of magnetic fields. As such, a magnetoresistive material such as permalloy can be used instead of an expensive material such a platinum. The resulting flow sensor transducer can be formed using standard semiconductor processing techniques and is less expensive than sensors containing platinum.
摘要:
A sensor apparatus includes a heating element comprising an upstream side and a downstream side. A first heat sensing set is generally configured adjacent to the upstream side of the heating element and comprises a first sensing element and a second sensing element, the first and second sensing elements configured in a serpentine, interdigitated pattern. A second heat sensing set can be configured adjacent to the downstream side of the heating element and comprises a third sensing element and a fourth sensing element, the third and fourth sensing elements configured in a serpentine, interdigitated pattern.