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1.发明授权Efficiency enhancement methods for OLED light source through index bridging 有权通过索引桥接提高OLED光源的效率提高方法公开(公告)号：US08232721B2
公开(公告)日：2012-07-31
申请号：US11223377
申请日：2005-09-08
申请人： Wencheng Su , Benjamin Krummacher
发明人： Wencheng Su , Benjamin Krummacher
CPC分类号： H01L51/5275 , H01L51/5237
摘要： An apparatus such as a light source is disclosed which has an OLED device and an index bridging elastomer disposed on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The elastomer bridges the refractive index between the substrate and an intended target for said apparatus.
摘要翻译： 公开了诸如光源的装置，其具有设置在所述OLED器件的衬底或透明电极上以及所述OLED器件的外部上的OLED器件和折射率桥接弹性体。 弹性体桥接衬底与所述装置的预期目标之间的折射率。
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2.发明申请Efficiency enhancement methods for OLED light source through index bridging 有权通过索引桥接提高OLED光源的效率提高方法公开(公告)号：US20070052350A1
公开(公告)日：2007-03-08
申请号：US11223377
申请日：2005-09-08
申请人： Wencheng Su , Benjamin Krummacher
发明人： Wencheng Su , Benjamin Krummacher
CPC分类号： H01L51/5275 , H01L51/5237
摘要： An apparatus such as a light source is disclosed which has an OLED device and an index bridging elastomer disposed on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The elastomer bridges the refractive index between the substrate and an intended target for said apparatus.
摘要翻译： 公开了诸如光源的装置，其具有设置在所述OLED器件的衬底或透明电极上以及所述OLED器件的外部上的OLED器件和折射率桥接弹性体。 弹性体桥接衬底与所述装置的预期目标之间的折射率。
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3.发明授权Solution processed crosslinkable hole injection and hole transport polymers for OLEDs 有权用于OLED的溶液加工的可交联空穴注入和空穴传输聚合物公开(公告)号：US07576356B2
公开(公告)日：2009-08-18
申请号：US11200453
申请日：2005-08-08
申请人： Wencheng Su , Franky So
发明人： Wencheng Su , Franky So
CPC分类号： H01L51/0034 , H01L51/002 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/0059 , H01L51/5052 , H01L51/5088
摘要： A fully solution-processed polymer electroluminescent device has a hole injection layer fabricated using a crosslinkable hole injection/transport material doped with conductivity dopants.
摘要翻译： 完全溶液处理的聚合物电致发光器件具有使用掺杂有导电性掺杂剂的可交联空穴注入/传输材料制造的空穴注入层。
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公开(公告)号：US08413317B1
公开(公告)日：2013-04-09
申请号：US12945681
申请日：2010-11-12
申请人： Dujiang Wan , Hai Sun , Ge Yi , Wei Gao , Hong Zhang , Guanghong Luo , Yunjun Tang , Tiffany Yun Wen Jiang , Zhigang Zhou , Wencheng Su
发明人： Dujiang Wan , Hai Sun , Ge Yi , Wei Gao , Hong Zhang , Guanghong Luo , Yunjun Tang , Tiffany Yun Wen Jiang , Zhigang Zhou , Wencheng Su
CPC分类号： G11B5/3163 , G11B2005/0021 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method and system for fabricating a microelectric device are described. A write pole of an energy assisted magnetic recording head or a capacitor might be fabricated. The method includes depositing a resist film and curing the resist film at a temperature of at least 180 degrees centigrade. A cured resist film capable of supporting a line having an aspect ratio of at least ten is thus provided. A portion of the cured resist film is removed. A remaining portion of the resist film forms the line. An insulating or nonmagnetic layer is deposited after formation of the line. The line is removed to provide a trench in the insulating or nonmagnetic layer. The trench has a height and a width. The height divided by the width corresponds to the aspect ratio. At least part of the structure is provided in the trench.
摘要翻译： 描述了一种用于制造微电子器件的方法和系统。 可以制造能量辅助磁记录头或电容器的写极。 该方法包括在至少180摄氏度的温度下沉积抗蚀剂膜并固化抗蚀剂膜。 因此提供了能够支撑纵横比至少为10的线的固化的抗蚀剂膜。 去除一部分固化的抗蚀剂膜。 抗蚀剂膜的剩余部分形成线。 在形成线之后沉积绝缘或非磁性层。 去除线以在绝缘或非磁性层中提供沟槽。 沟槽具有高度和宽度。 高度除以宽度对应于纵横比。 该结构的至少一部分设置在沟槽中。
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公开(公告)号：US08419953B1
公开(公告)日：2013-04-16
申请号：US13170491
申请日：2011-06-28
申请人： Wencheng Su , Zhigang Zhou , Jane Ang , Ming Jiang
发明人： Wencheng Su , Zhigang Zhou , Jane Ang , Ming Jiang
IPC分类号： B44C1/22
CPC分类号： H01L43/12 , G01R33/09 , G01R33/093 , G11B5/3163 , G11B5/3906 , G11B5/3929
摘要： A method for fabricating a transducer on a substrate is described. The transducer includes an antiferromagnetic seed structure. The antiferromagnetic seed structure includes a first NiFe layer, a first multilayer including a first Ru layer, a second NiFe layer, and a second multilayer including a second Ru layer. The second multilayer, the second NiFe layer and part of the first Ru layer are removed using a first wet etch, which uses a first etchant combination to remove NiFe and in which Ru is insoluble. The second Ru layer is removed through lift-off due to etching of the second NiFe layer. A remainder of the first Ru layer is removed through a second wet etch, which uses a second etchant combination to remove Ru. A remaining portion of the first multilayer and the first NiFe layer are removed through a third etch, which uses a third etchant combination that removes NiFe.
摘要翻译： 描述了在衬底上制造换能器的方法。 换能器包括反铁磁种子结构。 反铁磁种子结构包括第一NiFe层，包括第一Ru层的第一多层，第二NiFe层和包含第二Ru层的第二层。 使用第一湿蚀刻去除第二层，第二NiFe层和第一Ru层的一部分，第一湿法蚀刻使用第一蚀刻剂组合去除NiFe，其中Ru不溶。 由于第二NiFe层的蚀刻，第二Ru层被剥离除去。 通过第二湿蚀刻去除第一Ru层的剩余部分，其使用第二蚀刻剂组合去除Ru。 通过第三蚀刻去除第一多层和第一NiFe层的剩余部分，该蚀刻使用去除NiFe的第三蚀刻剂组合。
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公开(公告)号：US20070040494A1
公开(公告)日：2007-02-22
申请号：US11205530
申请日：2005-08-16
申请人： Wencheng Su , Homer Antoniadis , Franky So
发明人： Wencheng Su , Homer Antoniadis , Franky So
CPC分类号： H01L51/5048 , H01L51/5088 , H01L2251/558 , H05B33/0896 , Y02B20/36
摘要： An electroluminescent device utilizes a plurality of embodiments to minimize the variation in luminance due to changes in the voltage across the device. These include a highly conductive hole injection layer in a bi-layer device, a thick hoe transporting interlayer in a tri-layer device and the addition of an external resistor in series with the device.
摘要翻译： 电致发光器件利用多个实施例来最小化由于器件上的电压变化引起的亮度变化。 这些包括双层器件中的高导电性空穴注入层，三层器件中的厚空穴传输中间层和与该器件串联的外部电阻器的添加。
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7.发明申请Tri-layer PLED devices with both room-temperature and high-temperature operational stability 审中-公开三层PLED器件具有室温和高温操作稳定性公开(公告)号：US20060177690A1
公开(公告)日：2006-08-10
申请号：US11052942
申请日：2005-02-07
申请人： Wencheng Su
发明人： Wencheng Su
CPC分类号： H01L51/5048 , H01L51/5088
摘要： An electroluminescent device has a hole injection layer fabricated using a conducting polymer with acid dopant in which acidic hydrogen ions are replaced with selected organic and inorganic other ions. The device has a three layer organic stack, including an emissive layer and a hole transporting interlayer which is rendered insoluble to the solvent used for fabricating the emissive layer through crosslinking or polarity adjustment.
摘要翻译： 电致发光器件具有使用具有酸性掺杂剂的导电聚合物制造的空穴注入层，其中酸性氢离子被选择的有机和无机其他离子代替。 该器件具有三层有机堆叠，其包括发射层和空穴传输中间层，其通过交联或极性调节使其不溶于用于制造发射层的溶剂。
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公开(公告)号：US07626332B2
公开(公告)日：2009-12-01
申请号：US11205530
申请日：2005-08-16
申请人： Wencheng Su , Homer Antoniadis , Franky So
发明人： Wencheng Su , Homer Antoniadis , Franky So
CPC分类号： H01L51/5048 , H01L51/5088 , H01L2251/558 , H05B33/0896 , Y02B20/36
摘要： An electroluminescent device utilizes a plurality of embodiments to minimize the variation in luminance due to changes in the voltage across the device. These include a highly conductive hole injection layer in a bi-layer device, a thick hoe transporting interlayer in a tri-layer device and the addition of an external resistor in series with the device.
摘要翻译： 电致发光器件利用多个实施例来最小化由于器件上的电压变化引起的亮度变化。 这些包括双层器件中的高导电性空穴注入层，三层器件中的厚空穴传输中间层和与该器件串联的外部电阻器的添加。
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9.发明申请Solution processed crosslinkable hole injection and hole transport polymers for OLEDs 有权用于OLED的溶液加工的可交联空穴注入和空穴传输聚合物公开(公告)号：US20070029556A1
公开(公告)日：2007-02-08
申请号：US11200453
申请日：2005-08-08
申请人： Wencheng Su , Franky So
发明人： Wencheng Su , Franky So
IPC分类号： H01L33/00
CPC分类号： H01L51/0034 , H01L51/002 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/0059 , H01L51/5052 , H01L51/5088
摘要： A fully solution-processed polymer electroluminescent device has a hole injection layer fabricated using a crosslinkable hole injection/transport material doped with conductivity dopants.
摘要翻译： 完全溶液处理的聚合物电致发光器件具有使用掺杂有导电性掺杂剂的可交联空穴注入/传输材料制造的空穴注入层。
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