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1.发明申请METHOD AND APPARATUS FOR SUPPRESSING METAL-GATE CROSS-DIFFUSION IN SEMICONDUCTOR TECHNOLOGY 有权用于在半导体技术中抑制金属栅极交叉扩散的方法和装置公开(公告)号：US20150054085A1
公开(公告)日：2015-02-26
申请号：US13973616
申请日：2013-08-22
Applicant: Xilinx, Inc.
Inventor： Qi Lin , Hong-Tsz Pan , Yun Wu , Bang-Thu Nguyen
IPC: H01L27/092 , H01L21/8238
CPC classification number: H01L27/0928 , H01L21/8238 , H01L21/823842 , H01L21/823871 , H01L27/092
Abstract: An inverter includes: a PMOS comprising: a p-type source region, a p-type drain region, a p-channel region between the p-type source region and the p-type drain region, and a PMOS metal gate region; a NMOS, comprising: an n-type source region, an n-type drain region, an n-channel region between the n-type source region and the n-type drain region, and a NMOS metal gate region; an insulating layer above the p-channel region and the n-channel region, wherein the PMOS metal gate region and the NMOS metal gate region are above the insulating layer; and a gate contact between the NMOS metal gate region and the PMOS metal gate region.
Abstract translation: 反相器包括：PMOS，包括：p型源极区域，p型漏极区域，p型源极区域和p型漏极区域之间的p沟道区域以及PMOS金属栅极区域; NMOS，包括：n型源极区域，n型漏极区域，n型源极区域和n型漏极区域之间的n沟道区域以及NMOS金属栅极区域; 在p沟道区域和n沟道区域上方的绝缘层，其中PMOS金属栅极区域和NMOS金属栅极区域在绝缘层之上; 以及NMOS金属栅极区域和PMOS金属栅极区域之间的栅极接触。
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2.发明授权Method and apparatus for suppressing metal-gate cross-diffusion in semiconductor technology 有权用于抑制半导体技术中金属栅极交叉扩散的方法和装置公开(公告)号：US09385127B2
公开(公告)日：2016-07-05
申请号：US13973616
申请日：2013-08-22
Applicant: Xilinx, Inc.
Inventor： Qi Lin , Hong-Tsz Pan , Yun Wu , Bang-Thu Nguyen
IPC: H01L21/70 , H01L27/092 , H01L21/8238
CPC classification number: H01L27/0928 , H01L21/8238 , H01L21/823842 , H01L21/823871 , H01L27/092
Abstract: An inverter includes: a PMOS comprising: a p-type source region, a p-type drain region, a p-channel region between the p-type source region and the p-type drain region, and a PMOS metal gate region; a NMOS, comprising: an n-type source region, an n-type drain region, an n-channel region between the n-type source region and the n-type drain region, and a NMOS metal gate region; an insulating layer above the p-channel region and the n-channel region, wherein the PMOS metal gate region and the NMOS metal gate region are above the insulating layer; and a gate contact between the NMOS metal gate region and the PMOS metal gate region.
Abstract translation: 反相器包括：PMOS，包括：p型源极区域，p型漏极区域，p型源极区域和p型漏极区域之间的p沟道区域以及PMOS金属栅极区域; NMOS，包括：n型源极区域，n型漏极区域，n型源极区域和n型漏极区域之间的n沟道区域以及NMOS金属栅极区域; 在p沟道区域和n沟道区域上方的绝缘层，其中PMOS金属栅极区域和NMOS金属栅极区域在绝缘层之上; 以及NMOS金属栅极区域和PMOS金属栅极区域之间的栅极接触。
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