公开(公告)号：US20060066305A1

公开(公告)日：2006-03-30

申请号：US10520042

申请日：2003-07-11

申请人： Yong Sun ,  Tatsuro Miyasato

发明人： Yong Sun ,  Tatsuro Miyasato

IPC分类号： G01V3/00

CPC分类号： B82Y15/00 ,  G01N22/00

摘要： Disclosed is a method for measuring the molecular rotation speed (the number of rotations or the rotation frequency) of a fullerene or a fullerene derivative in a relatively simple and inexpensive manner, for the evaluation of the fullerenes. The method comprises having a thin film of the fullerene or the fullerene derivative absorb an electromagnetic wave varied in frequency, and measuring the change in electromagnetic wave intensity against temperature, thereby determining the molecular rotation speed of the fullerene or the fullerene derivative from the frequency of the electromagnetic wave at the temperature where there is an abrupt change in the electromagnetic wave intensity from the absorption region to the non-absorption region. In a preferred embodiment, electromagnetic waves produced from the surface of a surface acoustic wave device are used.

公开(公告)号：US07138799B2

公开(公告)日：2006-11-21

申请号：US10520042

申请日：2003-07-11

申请人： Yong Sun ,  Tatsuro Miyasato

发明人： Yong Sun ,  Tatsuro Miyasato

IPC分类号： G01V3/00

CPC分类号： B82Y15/00 ,  G01N22/00

摘要： Disclosed is a method for measuring the molecular rotation speed (the number of rotations or the rotation frequency) of a fullerene or a fullerene derivative in a relatively simple and inexpensive manner, for the evaluation of the fullerenes. The method comprises having a thin film of the fullerene or the fullerene derivative absorb an electromagnetic wave varied in frequency, and measuring the change in electromagnetic wave intensity against temperature, thereby determining the molecular rotation speed of the fullerene or the fullerene derivative from the frequency of the electromagnetic wave at the temperature where there is an abrupt change in the electromagnetic wave intensity from the absorption region to the non-absorption region. In a preferred embodiment, electromagnetic waves produced from the surface of a surface acoustic wave device are used.

摘要翻译： 公开了用于评估富勒烯的方法，以相对简单且廉价的方式测量富勒烯或富勒烯衍生物的分子旋转速度（旋转数或旋转频率）。 该方法包括使富勒烯或富勒烯衍生物的薄膜吸收频率变化的电磁波，并测量电磁波强度相对于温度的变化，从而从富勒烯或富勒烯衍生物的频率确定分子旋转速度 在从吸收区域到非吸收区域的电磁波强度突然变化的温度下的电磁波。 在优选实施例中，使用从表面声波装置的表面产生的电磁波。

公开(公告)号：US4767517A

公开(公告)日：1988-08-30

申请号：US20226

申请日：1987-03-02

申请人： Akio Hiraki ,  Tatsuro Miyasato

发明人： Akio Hiraki ,  Tatsuro Miyasato

IPC分类号： C23C14/00 ,  C23C14/06 ,  C23C14/34

CPC分类号： C23C14/0057 ,  C23C14/0605

摘要： The present invention relates to a diamond-like thin film and a method of making the diamond-like thin film comprises causing sputtering by applying an electric power under a limited hydrogen pressure within a sputtering apparatus having a graphite target and forming on a substrate the diamond-like thin film composed an accumulation of particles of several nm to several 100 nm and having its surface enclosed with alkyl radicals whose carbon number is 3 or less and its interior provided with a diamond structure of a four coordinated carbon arrangement.

摘要翻译： 本发明涉及一种类金刚石薄膜及其制造方法，该方法包括：在具有石墨靶的溅射装置内，在有限的氢气压力下施加电力进行溅射，并在基板上形成金刚石 类薄膜构成了数nm至数百nm的颗粒的积累，其表面被碳数为3或更小的烷基封闭，其内部设置有四配位碳排列的金刚石结构。

公开(公告)号：US4597844A

公开(公告)日：1986-07-01

申请号：US711018

申请日：1985-03-12

申请人： Akio Hiraki ,  Tatsuro Miyasato ,  Masao Hayashi

发明人： Akio Hiraki ,  Tatsuro Miyasato ,  Masao Hayashi

IPC分类号： C23C14/06 ,  H01J37/34

CPC分类号： H01J37/3402 ,  C23C14/0605 ,  Y10T428/30

摘要： A coating film comprises an amorphous carbon of a specified atomic ratio with respect to hydrogen and carbon and it is excellent in hardness, oxidation resistance, thermal resistance, electric resistance and thermal conductivity. The coating film is produced by sputtering a graphite target electrode in an atmosphere of hydrogen, fluorine or a mixture of hydrogen and fluorides having a gas pressure of 6.665 to 666.5 Pa (0.05 to 5.0 Torr) while maintaining the relative current density for the graphite target electrode and a power source between 11.3 and 14.7 ma/cm.sup.2 thereby limiting the H/C ratio in terms of an atomic ratio between 0.5 and 0.9. A sputtering apparatus used for producing such coating film includes a coating forming deposition substrate arranged at a position within a sputtering vacuum container which is not directly exposed to a plasma or a deposition substrate mounted on an electron drawing electrode within the container and a plasma adjusting electrode positioned in front of the substrate.

摘要翻译： 涂膜包含相对于氢和碳具有规定原子比的无定形碳，并且其硬度，抗氧化性，耐热性，电阻和导热性优异。 通过在氢，氟或气体压力为6.665〜666.5Pa（0.05〜5.0Torr）的氢气和氟化物的混合气体中溅射石墨靶电极，同时保持石墨靶的相对电流密度来制造涂膜 电极和11.3至14.7ma / cm2之间的电源，从而以原子比为0.5至0.9限制H / C比。 用于制造这种涂膜的溅射装置包括布置在溅射真空容器内的不直接暴露于安装在容器内的电子吸引电极上的等离子体或沉积基板上的位置的涂层形成沉积基板和等离子体调节电极 位于基板的前面。