Method and system for adjusting characteristics of integrated relative humidity sensor
    1.
    发明授权
    Method and system for adjusting characteristics of integrated relative humidity sensor 有权
    综合相对湿度传感器特性调整方法及系统

    公开(公告)号:US07924028B2

    公开(公告)日:2011-04-12

    申请号:US12052535

    申请日:2008-03-20

    IPC分类号: G01R27/26

    CPC分类号: G01N27/121 G01N27/225

    摘要: A method and system for adjusting characteristics of a relative humidity sensor in order to achieve a desired value of accuracy is presented. A relative humidity sensor charge balance circuit includes a series of sensing capacitors Cx1, Cx2 including a thin porous platinum top plate, a humidity sensitive polyimide dielectric, and two metal bottom plates on a semiconductor substrate; and two fixed oxide capacitances Cref, and C0. Changes in humidity affect the humidity sensitive dielectric thereby causing changes in the sensing capacitive value of the capacitive circuit. The charge in the sensing capacitor and the fixed capacitor C0 can be controlled separately by adjusting and/or trimming the supply voltage using a voltage trimmer; thereby the slope and offset of the relative humidity sensor circuit can be modified and controlled to particular desired values.

    摘要翻译: 提出了一种用于调整相对湿度传感器特性以达到所需精度值的方法和系统。 相对湿度传感器电荷平衡电路包括在半导体衬底上的一系列感测电容器Cx1,Cx2,包括薄多孔铂顶板,湿度敏感聚酰亚胺电介质和两个金属底板; 和两个固定的氧化物电容Cref和C0。 湿度的变化影响湿敏电介质,从而引起电容电路的感应电容值的变化。 感测电容器和固定电容器C0中的电荷可以通过使用电压调节器调节和/或调整电源电压来分开控制; 从而相对湿度传感器电路的斜率和偏移可以被修改和控制到特定的期望值。

    METHOD AND SYSTEM FOR ADJUSTING CHARACTERISTICS OF INTEGRATED RELATIVE HUMIDITY SENSOR
    2.
    发明申请
    METHOD AND SYSTEM FOR ADJUSTING CHARACTERISTICS OF INTEGRATED RELATIVE HUMIDITY SENSOR 有权
    用于调整综合相对湿度传感器特性的方法和系统

    公开(公告)号:US20090237090A1

    公开(公告)日:2009-09-24

    申请号:US12052535

    申请日:2008-03-20

    IPC分类号: G01R35/00 G01R27/26

    CPC分类号: G01N27/121 G01N27/225

    摘要: A method and system for adjusting characteristics of a relative humidity sensor in order to achieve a desired value of accuracy is presented. A relative humidity sensor, charge balance circuit include a series of sensing capacitors Cx1, Cx2 comprising of thin porous platinum top plate, a humidity sensitive polyimide dielectric, and two metal bottom plates on a semiconductor substrate; and two fixed oxide capacitances Cref, and C0. Changes in humidity affect the humidity sensitive dielectric thereby causing changes in the sensing capacitive value of the said capacitive circuit. The charge in the sensing capacitor and the fixed capacitor C0 can be controlled separately by adjusting and/or trimming the supply voltage using a voltage trimmer; thereby the slope and offset of the relative humidity sensor circuit can be modified and controlled to particular desired values

    摘要翻译: 提出了一种用于调整相对湿度传感器特性以达到所需精度值的方法和系统。 相对湿度传感器,电荷平衡电路包括在半导体衬底上包括薄多孔铂顶板,湿度敏感聚酰亚胺电介质和两个金属底板的一系列感测电容器Cx1,Cx2; 和两个固定的氧化物电容Cref和C0。 湿度的变化影响湿敏电介质,从而引起所述电容电路的感测电容值的变化。 感测电容器和固定电容器C0中的电荷可以通过使用电压调节器调节和/或调整电源电压来分开控制; 从而相对湿度传感器电路的斜率和偏移可以被修改和控制到特定的期望值

    Vertical hall effect device
    3.
    发明申请
    Vertical hall effect device 失效
    垂直厅效应装置

    公开(公告)号:US20060157809A1

    公开(公告)日:2006-07-20

    申请号:US11038881

    申请日:2005-01-20

    IPC分类号: H01L43/00 H01L29/82

    CPC分类号: H01L43/065 G01R33/077

    摘要: A vertical Hall effect apparatus, including methods thereof. A substrate layer can be provided upon which an epitaxial layer is formed. The epitaxial layer is surrounded vertically by one or more isolation layers. Additionally, an oxide layer can be formed above the epitaxial layer. A plurality of Hall effect elements can be formed within the epitaxial layer(s) and below the oxide layer, wherein the Hall effect elements sense the components of an arbitrary magnetic field in the plane of the wafer and perpendicular to the current flow in the hall element. A plurality of field plates can be formed above the oxide layer to control the inherited offset due to geometry control and processing of the vertical Hall effect apparatus, while preventing the formation of an output voltage of the vertical Hall effect apparatus at zero magnetic fields thereof.

    摘要翻译: 一种垂直霍尔效应装置,包括其方法。 可以提供形成外延层的衬底层。 外延层被一个或多个隔离层垂直包围。 另外,可以在外延层的上方形成氧化物层。 多个霍尔效应元件可以形成在外延层内并在氧化物层的下面,其中霍尔效应元件感测晶片平面中任意磁场的分量,并垂直于霍尔电流中的电流 元件。 可以在氧化物层上方形成多个场板,以控制由于垂直霍尔效应装置的几何形状控制和处理而导致的遗传偏移,同时防止垂直霍尔效应装置的输出电压在其零磁场下形成。