Abstract:
The PLL circuit comprises a phase/frequency detector (302), a loop filter (304, 306), a VCO (308) and a feedback loop (320). The VCO can be electrically disconnected from the PLL and comprises a programmable trimming circuit (316) and a current-controlled oscillator (318). For calibration the VCO is electrically disconnected from the loop filter and from the feedback loop, a constant reference voltage is applied to the voltage input (IN), a center frequency programming code (L) is applied to the trimming circuit, the center frequency programming code is iteratively adjusted until a desired center frequency is obtained, a gain programming code (K) is applied to the trimming circuit while the adjusted code is still applied, and the gain programming code is iteratively adjusted until a desired gain is obtained. Then the VCO is connected to the PLL, which is then ready for normal operation.
Abstract:
An oscillator circuit (10) comprises a current path (100) including a capacitor (110) having a first side (S110a) and a second side (S110b), wherein each of the first and second side (S110a, S110b) of the capacitor (110) is selectively connectable to at least a first supply terminal (VD) to apply a first voltage potential (VDDA) or a second supply terminal (VS) to apply a second voltage potential (VSS). The oscillator circuit (10) comprises a comparator (200) having a first input terminal (I200a) being selectively connectable to the first or the second side (S110a, S110b) of the capacitor (110), and a second input terminal (I200b) being connected to a terminal (VR) to apply a reference voltage (VREF). An output signal (OUT, OUTB) of the oscillator circuit is generated in dependence on a comparator output signal (VCFF) of the comparator (200).
Abstract:
A memory arrangement comprises a non-volatile memory plane (2), a replacement plane (3), an address select block (302), and a counter arrangement (300) having at least one counter (310 to 312). The at least one counter (310 to 312) is configured to be incremented at a write cycle of the memory arrangement (1). The address select block (302) is configured to switch from the non-volatile memory plane (2) to the replacement plane (3), if a counter value of the at least one counter (310 to 312) is higher than a predetermined limit.
Abstract:
A charge pump circuit (11) comprises a first stage (31) and at least a second stage (32), each having a capacitor (130, 230) and a current source (100, 200). The charge pump circuit (11) is configured such that, in a first phase (A) of operation, the capacitor (130) of the first stage (31) is switched in series to the current source (100) of the first stage (31) and the capacitor (230) of the second stage (32) is switched in series to the current source (200) of the second stage (32) and that, in a second phase (B) of operation, the capacitor (130) of the first stage (31) and the capacitor (230) of the second stage (32) are switched in series for providing a supply voltage (VHF) at an output (15) of the charge pump circuit (11). A comparator signal (SCOM) is generated by comparing a voltage at an electrode of one of the capacitors (130, 230) of the first and the at least second stage (31, 32) with a reference voltage (VR). The first and the second phase (A, B) are set depending on the comparator signal (SCOM).