公开(公告)号：US20200051650A1

公开(公告)日：2020-02-13

申请号：US16488745

申请日：2018-02-27

Applicant: ams AG

Inventor： Gregor SCHATZBERGER ,  Friedrich Peter LEISENBERGER ,  Peter SARSON

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/04 ,  G11C29/38

Abstract: A memory arrangement comprises a non-volatile memory plane (2), a replacement plane (3), an address select block (302), and a counter arrangement (300) having at least one counter (310 to 312). The at least one counter (310 to 312) is configured to be incremented at a write cycle of the memory arrangement (1). The address select block (302) is configured to switch from the non-volatile memory plane (2) to the replacement plane (3), if a counter value of the at least one counter (310 to 312) is higher than a predetermined limit.

公开(公告)号：US20160254406A1

公开(公告)日：2016-09-01

申请号：US15028010

申请日：2014-09-30

Applicant: ams AG

Inventor： Friedrich Peter LEISENBERGER

IPC: H01L31/09 ,  H01L27/144 ,  H01L21/3205 ,  H01L29/49 ,  H01L21/28 ,  H01L31/18 ,  H01L29/788 ,  H01L27/115

CPC classification number: H01L31/09 ,  G01J1/429 ,  H01L21/28282 ,  H01L21/32055 ,  H01L27/11558 ,  H01L27/1443 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14632 ,  H01L29/4916 ,  H01L29/788 ,  H01L31/02164 ,  H01L31/113 ,  H01L31/182

Abstract: The ultraviolet sensor device comprises a semiconductor substrate, a dielectric layer above the substrate, a surface of the dielectric layer that is provided for the incidence of ultraviolet radiation, a floating gate electrode in the dielectric layer and an electrically conductive control gate electrode near the floating gate electrode. The control gate electrode is insulated from the floating gate electrode. A sensor layer is formed by an electrically conductive further layer that is electrically conductively connected to the floating gate electrode. The control gate electrode is arranged outside a region that is located between the sensor layer and the surface provided for the incidence of ultraviolet radiation. The sensor layer is discharged by incident UV radiation and can be charged or discharged electrically by charging or discharging the floating gate electrode.

Abstract translation: 紫外线传感器装置包括半导体衬底，衬底上方的电介质层，设置用于紫外线辐射入射的电介质层的表面，电介质层中的浮置栅电极和靠近浮动的导电控制栅电极 栅电极。 控制栅电极与浮栅电极绝缘。 传感器层由与导电连接到浮栅电极的导电性另外的层形成。 控制栅极布置在位于传感器层和为紫外线辐射入射提供的表面之间的区域的外侧。 传感器层通过入射的紫外线辐射放电，并且可以通过对浮栅电极进行充电或放电来对其进行充电或放电。