公开(公告)号：US5633184A

公开(公告)日：1997-05-27

申请号：US386367

申请日：1995-02-09

申请人： Katsuhiko Tamura ,  Yukari Imai ,  Naoko Otani

发明人： Katsuhiko Tamura ,  Yukari Imai ,  Naoko Otani

IPC分类号： H01L21/8247 ,  H01L21/336 ,  H01L27/115 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01C21/8247 ,  H01C21/265

CPC分类号： H01L29/66825 ,  H01L29/511 ,  H01L27/115 ,  Y10S438/981

摘要： A semiconductor memory device effectively prevents formation of a gate bird's beak oxide film at a region through which electrons move in data writing and erasing operations. In the semiconductor memory device, nitride films having a thickness larger than that of a first gate oxide film are formed on a drain impurity diffusion layer and a source impurity diffusion layer to surround the first gate oxide film. A floating gate electrode has opposite ends protruded over the nitride films.

摘要翻译： 半导体存储器件有效地防止了在数据写入和擦除操作中电子移动的区域上形成栅极鸟喙氧化物膜。 在半导体存储器件中，在漏极杂质扩散层和源极杂质扩散层上形成厚度大于第一栅极氧化物膜的氮化物膜以围绕第一栅极氧化物膜。 浮栅电极具有突出在氮化物膜上的相对端。