公开(公告)号：US20040174109A1

公开(公告)日：2004-09-09

申请号：US10378754

申请日：2003-03-05

Inventor： Jeng-Maw Chiou ,  Jon-Lian Kwo ,  Kwan-Jon Chang ,  Shy-Wen Lai ,  Ai-Kang Li ,  Hong-Jen Lai

IPC: H01J043/00

CPC classification number: H01J63/06

Abstract: A field emitting luminous device is disclosed. The device includes a cathode electron emitting unit, an electron amplifying unit, a panel unit, and an electric power supply unit. The primary electrons emitted from the cathode electron emitting unit hit the electron amplifying material on the electrode surface of the electron amplifying unit, generating amplified secondary electrons. The secondary electrons bombard the light-emitting layer of the panel unit, producing fluorescence. The fluorescence penetrates the upper transparent panel and is thus observed by eyes.

Abstract translation: 公开了一种场致发光器件。 该装置包括阴极电子发射单元，电子放大单元，面板单元和电力供应单元。 从阴极电子发射单元发射的一次电子撞击电子放大单元的电极表面上的电子放大材料，产生放大的二次电子。 二次电子轰击面板单元的发光层，产生荧光。 荧光穿透上透明面板，因此被眼睛观察。

公开(公告)号：US20020149305A1

公开(公告)日：2002-10-17

申请号：US10166197

申请日：2002-06-11

Inventor： Mats Danielsson ,  Anders Brahme

IPC: H01J043/00

CPC classification number: H01J47/02 ,  A61N5/1048 ,  A61N2005/1054 ,  G01T1/185

Abstract: A detector unit for detecting photons in the energy range 1 keV to 100 MeV, includes at least two converter layers adapted to interact with incident X-ray photons and to cause electrons to be emitted therefrom, at least one amplifier adapted to interact with the electrons emitted from the converters and adapted to produce a multiplicity of secondary electrons and photons representing a signal proportional to the incident fluence of X-ray photons, a connector connecting the detector to an electric field generator providing an electric drift field for secondary electrons in the detector, and a sensor device arranged to receive the signal and provide an input to electronic signal processor.

Abstract translation: 用于检测能量范围为1keV至100MeV的光子的检测器单元包括适于与入射的X射线光子相互作用并使电子从其发射的至少两个转换器层，适于与电子相互作用的至少一个放大器 从转换器发射并且适于产生多个二次电子和光子，其表示与X射线光子的入射注量成正比的信号;将检测器连接到电场发生器的连接器，该电场产生器为检测器中的二次电子提供电漂移场 以及传感器装置，被布置成接收信号并向电子信号处理器提供输入。

公开(公告)号：US20040032193A1

公开(公告)日：2004-02-19

申请号：US10064787

申请日：2002-08-16

Applicant: Litton Systems, Inc.

Inventor： Carlos J. Batista ,  Michael J. Iosue

IPC: H01J043/00

CPC classification number: H01J43/246 ,  H01J9/12 ,  H01J2231/5016

Abstract: A microchannel plate (P) for receiving photoelectrons includes a plate-like substrate web (W) formed from a plurality of micro-tubules (10) of a single type of cladding glass (12) and defining a pair of opposite faces (14a and 14b). The substrate web (W) further includes a plurality of microchannel passages (16) extending between the opposite faces (14a and 14b) and having openings (18a and 18b, respectively) in both of the opposite faces (14a and 14b). The microchannel openings (18) have funnel-like entries or openings (20) formed in the substrate web (W) with at least one of the opposite faces (14).

Abstract translation: 用于接收光电子的微通道板（P）包括由单个类型的包层玻璃（12）的多个微小管（10）形成的板状衬底腹板（W），并且限定一对相对面（14a和 14b）。 衬底腹板（W）还包括在相对面（14a和14b）之间延伸并且在两个相对面（14a和14b）中分别具有开口（18a和18b）的多个微通道通道（16）。 微通道开口（18）具有形成在衬底腹板（W）中的漏斗状入口或开口（20），其中至少一个相对面（14）。

公开(公告)号：US20030151341A1

公开(公告)日：2003-08-14

申请号：US10367514

申请日：2003-02-13

Inventor： James A. Dayton JR.

IPC: H01J043/00 ,  H01J001/00

CPC classification number: H01J23/07 ,  H01J3/023

Abstract: An electron gun (10) includes an electron multiplier (22, 22null, 22null, 110) has a receiving end (50, 50null, 50null) for receiving primary electrons and an output end (54, 54null, 54null) that emits secondary electrons responsive to primary electrons arriving at the receiving end. An electron emitter (20, 20null, 20null, 102) is arranged at the receiving end of the electron multiplier for supplying primary electrons thereto. At least one of an electrical and a magnetic focusing component (14, 16) is arranged at the open output end of the electron multiplier for focusing the secondary electrons to define an electron beam. In a suitable embodiment, the electron multiplier includes a generally conical substrate (74, 90) and an electron mirror (52, 521, 522, 523, 921, 922) including a high secondary electron yield film (70) disposed on an outer surface of the conical substrate.

Abstract translation: 电子枪（10）包括具有用于接收一次电子的接收端（50,50'，50“）和输出端（54,54'）的电子倍增器（22,22'，22”，110“ 54“），其响应于到达接收端的一次电子发射二次电子。 电子发射器（20,20'，20“，102”）设置在电子倍增器的接收端，用于向其提供一次电子。 在电子倍增器的开放输出端处布置电和磁聚焦部件（14,16）中的至少一个，用于聚焦二次电子以限定电子束。 在合适的实施例中，电子倍增器包括大致圆锥形的基板（74,90）和电子反射镜（52,521,522,523,921,922），其包括设置在外表面上的高二次电子屈服膜（70） 的锥形衬底。

公开(公告)号：US20040256967A1

公开(公告)日：2004-12-23

申请号：US10855249

申请日：2004-05-27

Inventor： R. Gregory Downing ,  W. Bruce Feller ,  P. Brian White ,  Paul L. White

IPC: H01J043/00

CPC classification number: H01J43/246 ,  H01J9/125 ,  H01J43/04 ,  H01J2231/5016

Abstract: Electron multipliers, radiation detectors, and methods of making the multipliers and detectors are described. In some embodiments an electron multiplier has a structure including a plurality of interconnected fibers having electron-emissive surfaces, the fibers having a width to thickness aspect ratio greater than one.

Abstract translation: 描述了电子倍增器，辐射探测器和制造乘法器和检测器的方法。 在一些实施例中，电子倍增器具有包括具有电子发射表面的多个相互连接的纤维的结构，所述纤维的宽度与厚度之比大于1。

公开(公告)号：US20030127958A1

公开(公告)日：2003-07-10

申请号：US10259899

申请日：2002-09-28

Inventor： Michael Jude Iosue

IPC: H01J043/00

CPC classification number: H01J31/507 ,  H01J31/49 ,  H01J43/246 ,  H01J2231/50026 ,  H01J2231/50073

Abstract: A image intensifier tube (14) includes a housing (18) carrying a photocathode (22) and a microchannel plate (24). The housing also receives axially extending fine-dimension spacing structure (22a) interposed around an active area 22b of the photocathode and the microchannel plate to establish and maintain a selected fine-dimension, precise PC-to-MCP spacing between these structures. The housing includes yieldable deformable electrical contact structure (56null) for establishing and maintaining contact with the microchannel plate, and yieldable deformable sealing structure (58) allowing axial movement of the photocathode relative to the housing structure as the tube is assembled and the axial spacing structure controls PC-to-MCP spacing. The result is that the PC-to-MCP spacing dimension of the tube is largely isolated from dimensional variabilities of the housing and is established and maintained precisely during manufacturing of the tube despite stack up of tolerances for the housing and its components.

公开(公告)号：US20020167254A1

公开(公告)日：2002-11-14

申请号：US09855043

申请日：2001-05-14

Inventor： Richard A. Craig ,  Mary Bliss

IPC: H01J043/00

CPC classification number: B82Y10/00 ,  H01J1/34 ,  H01J43/08

Abstract: A method and apparatus for increasing the quantum efficiency of a photomultiplier tube by providing a photocathode with an increased surface-to-volume ratio. The photocathode includes a transparent substrate, upon one major side of which is formed one or more large aspect-ratio structures, such as needles, cones, fibers, prisms, or pyramids. The large aspect-ratio structures are at least partially composed of a photoelectron emitting material, i.e., a material that emits a photoelectron upon absorption of an optical photon. The large aspect-ratio structures may be substantially composed of the photoelectron emitting material (i.e., formed as such upon the surface of a relatively flat substrate) or be only partially composed of a photoelectron emitting material (i.e., the photoelectron emitting material is coated over large aspect-ratio structures formed from the substrate material itself.) The large aspect-ratio nature of the photocathode surface allows for an effective increase in the thickness of the photocathode relative the absorption of optical photons, thereby increasing the absorption rate of incident photons, without substantially increasing the effective thickness of the photocathode relative the escape incidence of the photoelectrons.

Abstract translation: 通过提供具有增加的表面与体积比的光电阴极来增加光电倍增管的量子效率的方法和装置。 光电阴极包括透明基板，其一个主要侧面形成一个或多个大的纵横比结构，例如针，锥体，纤维，棱镜或金字塔。 大的纵横比结构至少部分地由光电子发射材料组成，即在吸收光子时发射光电子的材料。 大的纵横比结构可以基本上由光电子发射材料组成（即，在相对平坦的衬底的表面上形成）或者仅部分地由光电子发射材料组成（即，光电子发射材料被涂覆在 由衬底材料本身形成的大的纵横比结构。）光电阴极表面的大的纵横比性质允许相对于光学光子的吸收有效地增加光电阴极的厚度，从而增加入射光子的吸收率， 相对于光电子的逸出发生率，基本上不增加光电阴极的有效厚度。

公开(公告)号：US20040245925A1

公开(公告)日：2004-12-09

申请号：US10482767

申请日：2004-07-26

Inventor： Kuniyoshi Yamauchi ,  Hiroshi Kondoh

IPC: H01J043/00 ,  H01J043/04

CPC classification number: H01J43/246 ,  H01J43/28

Abstract: An electron tube 10 is provided with: an MCP (electron multiplier) 14 which includes a multiplying portion 16 having a large number of microscopic holes for electron passage that can emit secondary electrons and a peripheral portion 18 that surrounds multiplying portion 16; and with a vacuum closed container 12 enclosing at least multiplying portion 16 of MCP 14. Thus, peripheral portion 18 of MCP 14 forms at least a portion of sidewalls 22 of vacuum closed container 12. Multiplying portion 16 is increased in size in this configuration in comparison with configurations having the same outer dimensions that accommodate the entirety of an MCP inside of vacuum closed container 12.

Abstract translation: 电子管10设置有：MCP（电子倍增器）14，其包括具有大量可发射二次电子的电子通过的微孔的乘法部分16和围绕乘法部分16的周边部分18; 并且具有封闭MCP 14的至少乘法部分16的真空密封容器12.因此，MCP 14的周边部分18形成真空密封容器12的侧壁22的至少一部分。在该构造中，乘法部分16的尺寸增加 与具有适应真空密闭容器12内部的MCP整体的相同外形尺寸的构造进行比较。

公开(公告)号：US20040189166A1

公开(公告)日：2004-09-30

申请号：US10396906

申请日：2003-03-25

Inventor： Arlynn Walter Smith

IPC: H01J043/00

CPC classification number: H01J43/10 ,  H01J1/32 ,  H01J31/506

Abstract: An image intensifier and electron multiplier therefor is disclosed. Photons of an image impinge a photo-cathode that converts the photons to electrons. An electron multiplier multiplies the electrons from the photo-cathode to create an increased number of electrons. A sensor captures the increased number of electrons to produce an intensified image. The electron multiplier is an electron bombarded device (EBD) containing a semiconductor structure. The semiconductor structure has an input surface for receiving electrons and an emission surface for passing an increased number of electrons. The semiconductor structure is doped to direct the flow of electrons through the semiconductor structure to an emission area on the emission surface.

公开(公告)号：US20030173884A1

公开(公告)日：2003-09-18

申请号：US10368466

申请日：2003-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-na Heo ,  Whi-kun Yi ,  Jeong-hee Lee ,  Se-gi Yu ,  Tae-won Jeong ,  Chang-soo Lee

IPC: H01J043/00

CPC classification number: B82Y10/00 ,  H01J43/243 ,  H01J43/246 ,  H01J2201/30469 ,  Y10S977/932 ,  Y10S977/939

Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

Abstract translation: 提供电子放大器及其制造方法。 电子放大器包括其中形成有多个通孔的基板，沉积在通孔的侧壁上的电阻层，包括沉积在电阻层上的碳纳米管的电子发射层和形成在每个上的电极层 的基板的上侧和下侧。 由于电子放大器的电子发射层是均匀的并且提供高的电子发射效率，所以提高了电子放大效率。 电子放大器制造方法能够经济地批量生产电子放大器。