Cold electron number amplifier
    1.
    发明授权
    Cold electron number amplifier 有权
    冷电子放大器

    公开(公告)号:US08750458B1

    公开(公告)日:2014-06-10

    申请号:US13307559

    申请日:2011-11-30

    CPC classification number: H01J35/06 H01J3/023 H01J2237/06358

    Abstract: A cold electron number amplifier device can provide a greater number of electrons at lower electron emitter temperature. The cold electron number amplifier device can comprise an evacuated enclosure 11, a first electron emitter 12 attached to the evacuated enclosure 11, and an electrically conductive second electron emitter 13 also attached to the evacuated enclosure. The first electron emitter 12 can be configured to emit electrons 14 within the evacuated enclosure 11. The second electron emitter 13 can have a voltage V2 greater than a voltage V1 of the first electron emitter 12 (V2>V1). The second electron emitter 13 can be positioned to receive impinging electrons 14 from the first electron emitter 12. Electrons 14 from the first electron emitter 12 can impart energy to electrons in the second electron emitter 13 and cause the second electron emitter 13 to emit more electrons 15.

    Abstract translation: 冷电子数放大器装置可以在较低的电子发射器温度下提供更多数量的电子。 冷电子数放大器装置可以包括抽真空的外壳11,附接到抽真空的外壳11的第一电子发射器12以及也连接到抽真空的外壳的导电的第二电子发射器13。 第一电子发射器12可以被配置为在真空的外壳11内发射电子14.第二电子发射器13可以具有大于第一电子发射器12的电压V1的电压V2(V2> V1)。 第二电子发射器13可以定位成从第一电子发射器12接收入射电子14.来自第一电子发射器12的电子14可以赋予第二电子发射体13中的电子能量,并使第二电子发射体13发射更多的电子 15。

    Electron bombardment of wide bandgap semiconductors for generating high brightness and narrow energy spread emission electrons
    2.
    发明授权
    Electron bombardment of wide bandgap semiconductors for generating high brightness and narrow energy spread emission electrons 有权
    用于产生高亮度和窄能量扩散发射电子的宽带隙半导体的电子轰击

    公开(公告)号:US07005795B2

    公开(公告)日:2006-02-28

    申请号:US10007631

    申请日:2001-11-09

    Abstract: A semiconductor source of emission electrons which uses a target of a wide bandgap semiconductor having a target thickness measured from an illumination surface to an emission surface. The semiconductor source is equipped with an arrangement for producing and directing a beam of seed electrons at the illumination surface and a mechanism for controlling the energy of the seed electrons such that the energy of the seed electrons is sufficient to generate electron-hole pairs in the target. A fraction of these electron-hole pairs supply the emission electrons. Furthermore, the target thickness and the energy of the seed electrons are optimized such that the emission electrons at the emission surface are substantially thermalized. The emission of electrons is further facilitated by generating negative electron affinity at the emission surface. The source of the invention can take advantage of diamond, AlN, BN, Ga1-yAlyN and (AlN)x(SiC)1-x, wherein 0≦y≦1 and 0.2≦x≦1 and other wide bandgap semiconductors.

    Abstract translation: 发射电子的半导体源,其使用从照明表面测量到发射表面的目标厚度的宽带隙半导体的靶。 半导体源配备有用于在照明表面处产生和引导种子电子束的装置,以及用于控制种子电子的能量的机构,使得种子电子的能量足以在所述电子 - 空穴对中产生电子 - 空穴对 目标。 这些电子 - 空穴对中的一部分提供发射电子。 此外,优化目标厚度和种子电子的能量,使得发射表面处的发射电子基本上被热化。 通过在发射表面产生负电子亲和力来进一步促进电子的发射。 本发明的来源可以利用金刚石,AlN,BN,Ga 1-y Al和(AlN)x(SiC) )1-x <,其中0 <= y <= 1和0.2 <= x <= 1以及其它宽带隙半导体。

    Field emission display device for uniform dispersion of electrons
    4.
    发明授权
    Field emission display device for uniform dispersion of electrons 失效
    用于电子均匀分散的场致发射显示装置

    公开(公告)号:US07733004B2

    公开(公告)日:2010-06-08

    申请号:US11472364

    申请日:2006-06-22

    Abstract: A field emission device (FED) includes a top substrate having an anode electrode and a phosphor layer, a lower substrate, at least one cathode electrode having an opening-pattern with at least one opening, an insulating layer located on the cathode electrode, a gate layer located on the insulating layer, and an electron emitter located in the opening of the cathode electrode. The electron emitter is adjacent to the cathode electrode and is electrically connected therewith. The cathode electrode having the opening-pattern is located on a bottom panel. Through the structure illustrated above, uniformity of emitting electron density can be improved and brightness and contrast of color for the FED can be enhanced.

    Abstract translation: 场发射器件(FED)包括具有阳极电极和荧光体层的顶部衬底,下部衬底,至少一个具有至少一个开口的开口图案的阴极电极,位于阴极电极上的绝缘层, 位于绝缘层上的栅极层和位于阴极电极的开口中的电子发射体。 电子发射体与阴极相邻并与其电连接。 具有开口图案的阴极位于底板上。 通过上述结构,能够提高发光电子密度的均匀性,能够提高FED的亮度和色彩对比度。

    Photovoltaic device and lamp and display using the photovoltaic device
    5.
    发明申请
    Photovoltaic device and lamp and display using the photovoltaic device 审中-公开
    光伏器件和灯和显示器使用光伏器件

    公开(公告)号:US20070235717A1

    公开(公告)日:2007-10-11

    申请号:US11227491

    申请日:2005-09-16

    CPC classification number: H01J3/023 H01J1/35 H01J3/021 H01J63/06

    Abstract: Provided are a photovoltaic device and a lamp and a display device using the same. The photovoltaic device includes a substrate; a conductive electric field enhanced layer including a plurality of partial electric field crowding end portions disposed on the substrate; an electron amplification layer disposed on the electric field enhanced layer and formed of a material that emits secondary electrons; and a photoelectric material layer disposed on the electron amplification layer. The photovoltaic device can be applied to various fields and used as a light emitting display device (OLED) to generate light with high luminance at a low voltage.

    Abstract translation: 提供了一种光伏器件和灯以及使用其的显示装置。 光电器件包括基板; 导电电场增强层,包括设置在所述基板上的多个部分电场拥挤端部; 设置在电场增强层上并由发射二次电子的材料形成的电子放大层; 以及设置在电子放大层上的光电材料层。 光电器件可以应用于各种领域,并且用作发光显示装置(OLED)以在低电压下产生高亮度的光。

    Electron source
    6.
    发明授权
    Electron source 失效
    电子源

    公开(公告)号:US07071604B2

    公开(公告)日:2006-07-04

    申请号:US10367514

    申请日:2003-02-13

    CPC classification number: H01J23/07 H01J3/023

    Abstract: An electron gun (10) includes an electron multiplier (22, 22′, 22″, 110) has a receiving end (50, 50′, 50″) for receiving primary electrons and an output end (54, 54′, 54″) that emits secondary electrons responsive to primary electrons arriving at the receiving end. An electron emitter (20, 20′, 20″, 102) is arranged at the receiving end of the electron multiplier for supplying primary electrons thereto. At least one of an electrical and a magnetic focusing component (14, 16) is arranged at the open output end of the electron multiplier for focusing the secondary electrons to define an electron beam. In a suitable embodiment, the electron multiplier includes a generally conical substrate (74, 90) and an electron mirror (52, 521, 522, 523, 921, 922) including a high secondary electron yield film (70) disposed on an outer surface of the conical substrate.

    Abstract translation: 电子枪(10)包括具有用于接收一次电子的接收端(50,50',50“)和输出端(54,54')的电子倍增器(22,22',22”,110“ 54“),其响应于到达接收端的一次电子发射二次电子。 电子发射器(20,20',20“,102”)设置在电子倍增器的接收端,用于向其提供一次电子。 在电子倍增器的开放输出端处布置电和磁聚焦部件(14,16)中的至少一个,用于聚焦二次电子以限定电子束。 在合适的实施例中,电子倍增器包括大致圆锥形的基板(74,90)和电子反射镜(52,52,52,52,52, 包括设置在锥形基板的外表面上的高二次电子屈服膜(70),包括高二次电子屈服膜(70)。

    Robust pierce gun
    7.
    发明申请

    公开(公告)号:US20020125841A1

    公开(公告)日:2002-09-12

    申请号:US09992694

    申请日:2001-11-20

    CPC classification number: H01J3/023 H01J23/06 H01J2201/3423

    Abstract: The present invention pertains to an electron gun that generates an electron flow and the application of this gun to produce rf energy or for injectors. The electron gun comprises an electrostatic cavity having a first stage with emitting faces and multiple stages with emitting sections. The gun is also comprised of a mechanism for producing an electrostatic force which encompasses the emitting faces and the multiple emitting sections so electrons are directed from the emitting faces toward the emitting sections to contact the emitting sections and generate additional electrons and to further contact other emitting sections to generate additional electrons and so on then finally to escape the end of the cavity. The emitting sections preferably provide the cavity with an accelerating force for electrons inside the cavity. The multiple sections preferably include thin forward emitting surfaces. The forward emitting surfaces can be of an annular shape, or of a circular shape, or of a rhombohedron shape. The mechanism preferably includes a mechanism for producing an electrostatic electric field that provides the force and which has a radial component that prevents the electrons from straying out of the region between the first stage with emitting faces and the multiple emitting sections. Additionally, the gun includes a mechanism for producing a magnetic field to contain the electrons anywhere from the first stage with emitting faces or any emitting section and to the end of the cavity. The present invention pertains to a method for producing a flow of electrons. The method comprises the steps of moving at least a first electron in a first direction at one location. Next there is the step of striking a first area with the first electron. Then there is the step of producing additional electrons at the first area due to the first electron. Next there is the step of moving electrons from the first area to a second area and transmitting electrons through the second area and creating more electrons due to electrons from the first area striking the second area. These newly created electrons from the second area move in the first direction then strike the third area, fourth area, etc. Each area creates even more electrons in a repeating manner by moving in the first direction to multiple areas. This process is also repeated at different locations. The mechanism preferably includes a mechanism for accelerating the electrons inside the electrostatic cavity to allow the electron multiplication to continue. The mechanism preferably includes a control grid for bunching the electron flow. The present invention pertains to an electron gun. The electron gun comprises an electrostatic cavity having a first stage with electron emitting faces and multiple stages with electron emitting sections. The electron gun also comprises a mechanism for producing an electrostatic force which encompasses the electron emitting faces and the multiple electron emitting sections so electrons from the electron emitting faces and sections are directed from the emitting faces toward the emitting sections to contact the emitting sections and generate additional electrons on the opposite sides of the emitting sections and to further contact other emitting sections. The present invention pertains to a method for producing electrons. The method comprises the steps of moving at least a first electron in a first direction from a first location. Then, there is the step of striking a first area with the first electron. Next, there is the step of producing additional electrons at the first area due to the first electrons on the opposite side of the first area which was struck by the first electron. Next, there is the step of moving electrons from the first area to a second area. Then, there is the step of transmitting electrons to the second area and creating more electrons due to electrons from the first area striking the second area.

    Miniature, low-power X-ray tube using a microchannel electron generator electron source
    9.
    发明授权
    Miniature, low-power X-ray tube using a microchannel electron generator electron source 失效
    微型低功耗X射线管采用微通道电子发生器电子源

    公开(公告)号:US08081734B2

    公开(公告)日:2011-12-20

    申请号:US12628446

    申请日:2009-12-01

    Abstract: Embodiments of the invention provide a novel, low-power X-ray tube and X-ray generating system. Embodiments of the invention use a multichannel electron generator as the electron source, thereby increasing reliability and decreasing power consumption of the X-ray tube. Unlike tubes using a conventional filament that must be heated by a current power source, embodiments of the invention require only a voltage power source, use very little current, and have no cooling requirements. The microchannel electron generator comprises one or more microchannel plates (MCPs), Each MCP comprises a honeycomb assembly of a plurality of annular components, which may be stacked to increase electron intensity. The multichannel electron generator used enables directional control of electron flow. In addition, the multichannel electron generator used is more robust than conventional filaments, making the resulting X-ray tube very shock and vibration resistant.

    Abstract translation: 本发明的实施例提供了一种新颖的低功率X射线管和X射线产生系统。 本发明的实施例使用多声道电子发生器作为电子源,从而提高X射线管的可靠性和降低功耗。 与使用必须由电流源加热的传统灯丝的管不同,本发明的实施例仅需要电压电源,使用极少的电流,并且不具有冷却要求。 微通道电子发生器包括一个或多个微通道板(MCP)。每个MCP包括多个环形部件的蜂窝组件,其可堆叠以增加电子强度。 所使用的多通道电子发生器能够对电子流进行定向控制。 此外,所使用的多声道电子发生器比常规灯丝更坚固,使得所得到的X射线管非常震动和抗振动。

    Method and apparatus for generation and frequency tuning of modulated, high current electron beams
    10.
    发明申请
    Method and apparatus for generation and frequency tuning of modulated, high current electron beams 有权
    调制的高电流电子束的产生和频率调谐的方法和装置

    公开(公告)号:US20040245933A1

    公开(公告)日:2004-12-09

    申请号:US10855828

    申请日:2004-05-27

    CPC classification number: H01J23/06 H01J3/023 H01J25/02

    Abstract: Generating and frequency tuning of modulated high current electron beams and a specific efficient, high current, frequency-tunable device for generating intense radio frequency (RF), microwave electromagnetic fields in a standard rectangular waveguide. The invention utilizes current multiplication of a seed electron beam, comprising an energetic electron beam to impact a thin foil surface with high electric field. The transmissive-electron-multiplier foils also mitigate both space charge expansion and improve beam propagation effects, by shorting of the radially directed electric field at the axial location of the foil(s). Foil thinness and intensity of the exit fields provide for a multiplication process occurring in a fraction of an RF period. Both self-excited oscillator and amplifier configurations are envisaged. Also included is both a self-excited microwave generator and an amplifier, using a temporally modulated laser to generate a seed electron beam that is amplified. Methods to tune the oscillator are described that allow tunability over a full waveguide band.

    Abstract translation: 调制高电流电子束的产生和频率调谐以及用于在标准矩形波导中产生强射频(RF),微波电磁场的特定高效,高电流,频率可调谐装置。 本发明利用种子电子束的电流倍增,其包括高能电子束以高电场冲击薄箔表面。 透射电子倍增器箔还通过在箔的轴向位置处的径向定向电场的短路来减轻空间电荷膨胀并且改善光束传播效应。 箔片的薄度和出射场的强度提供了在RF周期的一小部分中发生的乘法过程。 设想了自激振荡器和放大器配置。 还包括自激式微波发生器和放大器,使用时间调制的激光器来产生放大的种子电子束。 描述了调谐振荡器的方法,其允许在整个波导带上的可调谐性。

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