公开(公告)号：US5217907A

公开(公告)日：1993-06-08

申请号：US826798

申请日：1992-01-28

Applicant: Constantin Bulucea ,  Mark A. Grant

Inventor： Constantin Bulucea ,  Mark A. Grant

IPC: G01R31/28

CPC classification number: G01R31/2831 ,  Y10S148/135 ,  Y10S148/162 ,  Y10S438/934

Abstract: A method of extracting an impurity profile from a diced semiconductor chip having cellular construction. The cells are arranged in a matrix the columns and rows of which have a defined column pitch a.sub.x and a defined row spacing a.sub.y. In accordance with the method, the diced chip is bevelled from its original surface to expose the cells. The two probes of a Spreading Resistance Profile (SRP) device are then placed in contact with the dopant regions of two cells in the same row of the matrix, the distance .DELTA.X between the probes being ma.sub.x, where m is an integer, and the total resistance R.sub.T between the probes is measured. The SRP device is then stepped through a plurality of rows in the matrix, contacting cells in the same two columns as in the case of the first measurement, thereby interactively generating a plurality of total resistance R.sub.T measurements. The total resistance R.sub.T measurements are then combined to obtain the doping profile of the dopant region.

Abstract translation: 从具有细胞结构的切割半导体芯片提取杂质分布的方法。 单元格排列成矩阵，其列和行具有限定的列间距ax和定义的行间距ay。 根据该方法，切割的芯片从其原始表面倾斜以暴露细胞。 然后将扩展电阻曲线（SRP）器件的两个探针放置成与矩阵的同一行中的两个单元的掺杂区域接触，探针之间的距离DELTA X为max，其中m为整数， 测量探针之间的总电阻RT。 SRP装置然后在矩阵中步进穿过多行，接触与第一次测量情况相同的两列中的单元，由此交互地产生多个总电阻RT测量。 然后组合总电阻RT测量以获得掺杂剂区域的掺杂分布。