公开(公告)号：US20250015196A1

公开(公告)日：2025-01-09

申请号：US18889394

申请日：2024-09-19

Applicant: Japan Display Inc. ,  IDEMITSU KOSAN CO., LTD.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Toshinari SASAKI ,  Takaya TAMARU ,  Emi KAWASHIMA ,  Yuki TSURUMA ,  Daichi SASAKI

IPC: H01L29/786 ,  H01L29/66

Abstract: A thin film transistor includes a metal oxide layer over the substrate, an oxide semiconductor layer having crystallinity in contact with the metal oxide layer, a gate electrode overlapping the oxide semiconductor layer, and an insulating layer between the oxide semiconductor layer and the gate electrode. The oxide semiconductor layer includes a plurality of crystal grains. Each of the plurality of crystal grains includes at least one of a crystal orientation , a crystal orientation , and a crystal orientation obtained by an EBSD method. In occupancy rates of crystal orientations calculated based on measurement points having crystal orientations with a crystal orientation difference greater than or equal to 0 degrees and less than or equal to 15 degrees with respect to a normal direction of a surface of the substrate, an occupancy rate of the crystal orientation is less than or equal to 5%.

公开(公告)号：US20250015189A1

公开(公告)日：2025-01-09

申请号：US18894346

申请日：2024-09-24

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Toshinari SASAKI ,  Takaya TAMARU

IPC: H01L29/786 ,  G02F1/1368 ,  H01L29/66 ,  H10K59/121

Abstract: A semiconductor device includes a metal oxide layer over an insulating surface, an oxide semiconductor layer over the metal oxide layer, and an insulating layer over the oxide semiconductor. The insulating layer includes a first region overlapping the oxide semiconductor layer. A first aluminum concentration of the first region is greater than or equal to 1×1017 atoms/cm3.

公开(公告)号：US20250013102A1

公开(公告)日：2025-01-09

申请号：US18760488

申请日：2024-07-01

Applicant: Japan Display Inc.

Inventor： Ayaka HIGUCHI ,  Shinichiro OKA ,  Koichi IGETA ,  Junji KOBASHI

IPC: G02F1/1337 ,  G02F1/13363

Abstract: According to one embodiment, a liquid crystal optical element includes a transparent substrate having a first main surface, an alignment control layer having a plurality of convex bodies, and a liquid crystal layer having a cholesteric liquid crystal. The alignment control layer has a first alignment area in which the convex bodies are arranged at a first pitch, and a second alignment area in which the convex bodies are arranged at a second pitch. The second pitch is less than the first pitch. The liquid crystal layer has a first liquid crystal area which overlaps the first alignment area, and a second liquid crystal area which overlaps the second alignment area.

公开(公告)号：US20250010602A1

公开(公告)日：2025-01-09

申请号：US18758438

申请日：2024-06-28

Applicant: Japan Display Inc.

Inventor： Yosuke HYODO

IPC: B32B37/12 ,  B32B7/12 ,  B32B27/08 ,  B32B37/24

Abstract: According to an aspect, a method for manufacturing a stretchable device includes: preparing a glass plate provided with an inorganic film; forming a resin base member on the inorganic film; forming an array layer on the resin base member; and bonding a stretchable resin to the array layer. The bonding the stretchable resin includes arranging part of the stretchable resin in a through hole that passes through the resin base member and the array layer and bonding the part of the stretchable resin to the inorganic film. The inorganic film has a formation surface on which the resin base member is formed. The formation surface has a recess recessed toward the glass plate.

公开(公告)号：US12193278B2

公开(公告)日：2025-01-07

申请号：US18399954

申请日：2023-12-29

Applicant: Japan Display Inc.

Inventor： Hiroshi Tabatake

IPC: H10K59/122 ,  G09G3/3225 ,  H10K59/131 ,  H10K59/80

Abstract: According to one embodiment, a display device includes a substrate, a circuit layer including a metal-made feed line in a surrounding area, an insulating layer covering the circuit layer, a lower electrode, a rib, a partition above the rib, an upper electrode connected to the partition, an organic layer between the electrodes and a conductive layer connected to the partition. The partition and the conductive layer each includes a metal-made lower portion and an upper portion protruding from a side surface of the lower portion. The lower portion of the conductive layer and the feed line are in contact with each other in the first contact portion in the surrounding area.

公开(公告)号：US12191316B2

公开(公告)日：2025-01-07

申请号：US18439855

申请日：2024-02-13

Applicant: Japan Display Inc.

Inventor： Tatsuya Toda ,  Toshinari Sasaki ,  Masayoshi Fuchi

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/3225 ,  G09G3/3266 ,  H10K59/12 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131

Abstract: A semiconductor device including: a first gate electrode; a first gate insulating layer on the first gate electrode; a first oxide semiconductor layer on the first insulating layer; source and drain electrodes connected to the first oxide semiconductor layer; a second gate insulating layer on the first oxide semiconductor layer; a second oxide semiconductor layer on the second gate insulating layer; a second gate electrode on the second oxide semiconductor layer, the second gate electrode being in contact with the second oxide semiconductor layer; a first insulating layer on the second gate electrode, the first insulating layer having a part of a first aperture overlapping with the second oxide semiconductor layer in a planar view; and a first connecting electrode electrically connecting the first gate electrode and the second gate electrode via the first aperture.

公开(公告)号：US12189247B2

公开(公告)日：2025-01-07

申请号：US18346308

申请日：2023-07-03

Applicant: Japan Display Inc.

Inventor： Yosuke Hyodo

IPC: G02F1/1347 ,  G02F1/1339 ,  G02F1/1368

Abstract: An LCD includes a first LC panel with a first TFT substrate and a first counter substrate adhered together with a first sealing layer, first and second polarizers bonded to lower and upper surfaces of the first LC panel, a second LC panel with a second TFT substrate and a second counter substrate adhered together with a second sealing layer, and third and fourth polarizers bonded to lower and upper surfaces of the second LC panel. The first and second LC panels are arranged overlapping each other. The second counter substrate and the first TFT substrate are adhered together at their peripheral portions with a third sealing layer. The first and fourth polarizers are arranged on an inner side of the third sealing layer. The first and fourth polarizers are adhered together with an adhesive layer, or a high refractive oil exists between the first and fourth polarizers.

公开(公告)号：US20250008769A1

公开(公告)日：2025-01-02

申请号：US18751354

申请日：2024-06-24

Applicant: Japan Display Inc.

Inventor： Kaichi FUKUDA

IPC: H10K59/12 ,  H10K59/122 ,  H10K59/131 ,  H10K59/80 ,  H10K71/60 ,  H10K102/00 ,  H10K102/10 ,  H10K102/20

Abstract: According to one embodiment, a display device includes a base electrode including a first reflective layer, a lower electrode including a second reflective layer and provided on the base electrode, and a rib which covers an edge portion of the base electrode and has a pixel aperture overlapping the lower electrode. A width of the base electrode is greater than a width of the lower electrode.

公开(公告)号：US20250008759A1

公开(公告)日：2025-01-02

申请号：US18883461

申请日：2024-09-12

Applicant: Japan Display Inc.

Inventor： Makoto HAYASHI ,  Hirofumi KATO ,  Yoshitaka KOJIMA ,  Yuta HAGA ,  Ayato KITAMURA ,  Yoshiyuki TERADA

IPC: H10K39/00 ,  A61B5/024 ,  A61B5/1455

Abstract: According to an aspect, a detection device includes: a light source configured to emit light to an object to be detected; a plurality of photodiodes that each include a sensor electrode and an organic semiconductor layer and are arranged in a detection area; and one or a plurality of detection circuits coupled to the photodiodes. The photodiodes includes a first photodiode and a second photodiode that has a shorter distance from the light source than that of the first photodiode. A light-receiving area of the first photodiode is larger than a light-receiving area of the second photodiode.

公开(公告)号：US20250006783A1

公开(公告)日：2025-01-02

申请号：US18830651

申请日：2024-09-11

Applicant: Japan Display Inc. ,  IDEMITSU KOSAN CO., LTD.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Toshinari SASAKI ,  Takaya TAMARU ,  Emi KAWASHIMA ,  Yuki TSURUMA ,  Daichi SASAKI

IPC: H01L29/04 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

Abstract: A thin film transistor includes an oxide semiconductor layer having crystallinity over a substrate, a gate electrode overlapping the oxide semiconductor layer, and an insulating layer between the oxide semiconductor layer and the gate electrode. The oxide semiconductor layer includes a plurality of crystal grains. Each of the plurality of crystal grains includes at least one of a crystal orientation , a crystal orientation , and a crystal orientation obtained by an EBSD method. In occupancy rates of crystal orientations calculated based on measurement points having crystal orientations with a crystal orientation difference greater than or equal to 0 degrees and less than or equal to 15 degrees with respect to a normal direction of a surface of the substrate, an occupancy rate of the crystal orientation is greater than an occupancy rate of the crystal orientation and an occupancy rate of the crystal orientation .