公开(公告)号：US20220367528A1

公开(公告)日：2022-11-17

申请号：US17876063

申请日：2022-07-28

申请人： Japan Display Inc.

发明人： Akihiro HANADA ,  Hajime WATAKABE ,  Kazufumi WATABE

IPC分类号： H01L27/12 ,  H02J13/00 ,  G06F1/26 ,  H04L41/069 ,  H04L47/2416 ,  H04L67/12

摘要： A semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.

公开(公告)号：US20220173247A1

公开(公告)日：2022-06-02

申请号：US17522258

申请日：2021-11-09

申请人： Japan Display Inc.

发明人： Akihiro HANADA ,  Hajime WATAKABE ,  Takuo KAITOH ,  Ryo ONODERA

IPC分类号： H01L29/786

摘要： A semiconductor device includes a thin-film transistor. The thin-film transistor comprises an oxide semiconductor layer, a gate insulating layer, a gate electrode overlapped on the oxide semiconductor layer through the gate insulating layer, a source electrode in contact with the oxide semiconductor layer, a drain electrode in contact with the oxide semiconductor layer and a first metal layer in contact with the oxide semiconductor layer and disposed between the source electrode and the drain electrode at a distance from the source electrode and the drain electrode.

公开(公告)号：US20210391359A1

公开(公告)日：2021-12-16

申请号：US17459423

申请日：2021-08-27

申请人： Japan Display Inc.

发明人： Hajime WATAKABE ,  Isao SUZUMURA ,  Akihiro HANADA ,  Yohei YAMAGUCHI

IPC分类号： H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

摘要： A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.

公开(公告)号：US20210320158A1

公开(公告)日：2021-10-14

申请号：US17304569

申请日：2021-06-23

申请人： Japan Display Inc.

发明人： Akihiro HANADA ,  Toshihide JINNAI ,  Isao SUZUMURA ,  Hajime WATAKABE ,  Ryo ONODERA

IPC分类号： H01L27/32 ,  G02F1/1333

摘要： The purpose of the present invention is to increase ON current of the oxide semiconductor thin film transistor. An example of the structure that attains the purpose is: a display device having a substrate and a thin film transistor of an oxide semiconductor formed on the substrate including: a thickness of a source region and a drain region is thicker than a thickness of a channel region of the oxide semiconductor, the channel region has projections at portions contacting the source region and the drain region, a thickness of the projection is thicker than a thickness of the center of the channel region, and a thickness of the projection is thicker than a thickness of the source region and the drain region.

公开(公告)号：US20210240042A1

公开(公告)日：2021-08-05

申请号：US17159154

申请日：2021-01-27

申请人： Japan Display Inc.

发明人： Ryo ONODERA ,  Hajime WATAKABE ,  Akihiro HANADA

IPC分类号： G02F1/1362

摘要： A high definition display device is provided. The display device includes an array substrate, and an opposing substrate. The array substrate has a substrate, and on the substrate, a first pixel having a first color filter and a second pixel having a second color filter disposed adjacent to the first pixel. Each of the first color filter and the second color filter has a first dielectric layer, a transmissive layer disposed on the first dielectric layer, and a second dielectric layer disposed on the transmissive layer. The transmissive layer of the first color filter has a first film thickness, and the transmissive layer of the second color filter has a second film thickness larger than the first film thickness. On the transmissive layer of the second color filter, a first layer different from the transmissive layer is disposed on a side of the transmissive layer of the first color filter. A height of a bottom face of the first layer is equal to the first film thickness.

公开(公告)号：US20200259020A1

公开(公告)日：2020-08-13

申请号：US16785662

申请日：2020-02-10

申请人： Japan Display Inc.

发明人： Hajime WATAKABE ,  Tomoyuki ITO ,  Toshihide JINNAI ,  lsao SUZUMURA ,  Akihiro HANADA ,  Ryo ONODERA

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L21/426 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/66

摘要： A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

公开(公告)号：US20180013006A1

公开(公告)日：2018-01-11

申请号：US15713077

申请日：2017-09-22

申请人： Japan Display Inc.

发明人： Miyuki ISHIKAWA ,  Arichika ISHIDA ,  Masayoshi FUCHI ,  Hajime WATAKABE ,  Takashi OKADA

IPC分类号： H01L29/786 ,  H01L29/417 ,  H01L27/32 ,  H01L27/12 ,  H01L21/467 ,  H01L21/465 ,  H01L29/66 ,  H01L21/441

CPC分类号： H01L29/7869 ,  H01L21/441 ,  H01L21/465 ,  H01L21/467 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3272 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78633 ,  H01L29/78696

摘要： According to one embodiment, a semiconductor device includes contact holes passing through a source region of a drain region of an interlayer insulating film and oxide semiconductor layer to reach an insulating substrate, wherein a source electrode and a drain electrode are formed inside the contact holes, respectively.

公开(公告)号：US20230068478A1

公开(公告)日：2023-03-02

申请号：US17894176

申请日：2022-08-24

申请人： Japan Display Inc.

发明人： Ryo ONODERA ,  Masashi TSUBUKU ,  Hajime WATAKABE

IPC分类号： H01L29/786

摘要： According to one embodiment, a semiconductor device includes a substrate, a first insulating layer disposed on the substrate, an oxide semiconductor disposed on the first insulating layer and formed in an island shape, a second insulating layer covering the oxide semiconductor, a gate electrode disposed on the second insulating layer, and a source electrode and a drain electrode in contact with the oxide semiconductor. The oxide semiconductor includes a plurality of first openings located between the gate electrode and the source electrode, and a plurality of second openings located between the gate electrode and the drain electrode, in planar view.

公开(公告)号：US20230059822A1

公开(公告)日：2023-02-23

申请号：US17889402

申请日：2022-08-17

申请人： Japan Display Inc.

发明人： Akihiro HANADA ,  Hajime WATAKABE

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66 ,  G02F1/1368

摘要： According to one embodiment, a transistor includes a first gate electrode, a second gate electrode, an oxide semiconductor layer disposed between the first gate electrode and the second gate electrode, and a source electrode and a drain electrode each connected to the oxide semiconductor layer, wherein the oxide semiconductor layer includes a channel forming region, a source region, and a drain region, a light irradiation region which is made low-resistance by irradiating light thereto is each formed between the channel forming region and the source region and between the channel forming region and the drain region, and the first date electrode and the second gate electrode have different lengths.

公开(公告)号：US20230058988A1

公开(公告)日：2023-02-23

申请号：US17891162

申请日：2022-08-19

申请人： Japan Display Inc.

发明人： Akihiro HANADA ,  Hajime WATAKABE ,  Takeshi SAKAI

IPC分类号： H01L29/786 ,  H01L29/10 ,  H01L29/423 ,  H01L29/417

摘要： According to one embodiment, a transistor includes a gate electrode, an oxide semiconductor layer which overlaps the gate electrode and including a central portion and an end portion, and a source electrode and a drain electrode each connected to the oxide semiconductor layer, wherein an oxidation degree of the end portion is lower than an oxidation degree of the central portion, and a length of the gate electrode overlapping the central portion is greater than a length of the gate electrode overlapping the end portion.