METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    92.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
    制造半导体器件的方法

    公开(公告)号:US20090142922A1

    公开(公告)日:2009-06-04

    申请号:US12262915

    申请日:2008-10-31

    申请人: Seung Hyun KIM

    发明人: Seung Hyun KIM

    IPC分类号: H01L21/4763

    摘要: A method for manufacturing a semiconductor device. In one example embodiment, a method for manufacturing a semiconductor device includes various steps. First, a dielectric layer is formed on the whole surface of a semiconductor substrate that includes an upper surface of a transistor. Next, a trench and a contact hole are formed by etching the dielectric layer so that the upper surface of the transistor is exposed. Then, a contact is formed by embedding a first conductive layer in the contact hole. Next, an etching stop layer is selectively forming on an upper part of the contact. Then, the semiconductor device is blanket-etched such that the first conductive layer remains in the trench. Next, the etching stop layer is removed. Finally, a metal line is formed by embedding a second conductive layer in the trench.

    摘要翻译: 一种半导体器件的制造方法。 在一个示例性实施例中,制造半导体器件的方法包括各种步骤。 首先,在包括晶体管的上表面的半导体衬底的整个表面上形成电介质层。 接下来,通过蚀刻电介质层形成沟槽和接触孔,使晶体管的上表面露出。 然后,通过在接触孔中嵌入第一导电层形成接触。 接下来,在接触件的上部选择性地形成蚀刻停止层。 然后,半导体器件被覆盖蚀刻,使得第一导电层保留在沟槽中。 接下来,去除蚀刻停止层。 最后,通过在沟槽中嵌入第二导电层形成金属线。

    METHOD FOR FORMING METAL WIRING IN SEMICONDUCTOR DEVICE
    93.
    发明申请
    METHOD FOR FORMING METAL WIRING IN SEMICONDUCTOR DEVICE 审中-公开
    在半导体器件中形成金属接线的方法

    公开(公告)号:US20080150166A1

    公开(公告)日:2008-06-26

    申请号:US11958035

    申请日:2007-12-17

    申请人: Seung-Hyun Kim

    发明人: Seung-Hyun Kim

    摘要: Embodiments relate to a metal wiring in a semiconductor device that may be formed by depositing a metal layer on a semiconductor substrate, and performing ion bombardment on a surface of the metal layer to thereby forming the metal wiring. According to embodiments, the metal layer may be etched and ion bombardment may then be performed on the surface of the metal wiring to form the metal wiring.

    摘要翻译: 实施例涉及可以通过在半导体衬底上沉积金属层并且在金属层的表面上进行离子轰击以形成金属布线而形成的半导体器件中的金属布线。 根据实施例,可以蚀刻金属层,然后可以在金属布线的表面上进行离子轰击以形成金属布线。

    Backlight driving apparatus
    94.
    发明申请
    Backlight driving apparatus 有权
    背光驱动装置

    公开(公告)号:US20080136769A1

    公开(公告)日:2008-06-12

    申请号:US11894833

    申请日:2007-08-22

    IPC分类号: G09G3/36

    摘要: A backlight driving apparatus is disclosed which is capable of simplifying a circuit configuration for driving of a plurality of light emitting diode arrays and making the current balance of the light emitting diode arrays uniform. The backlight driving apparatus includes n light emitting diode arrays that include a plurality of light emitting diodes connected in series, a power source for generating a driving current, a current generator for generating currents to drive the light emitting diode arrays using the driving current, respectively, and a current mirror circuit for allowing substantially the same amount of currents to flow respectively through the light emitting diode arrays based on current from any one of the n light emitting diode arrays.

    摘要翻译: 公开了一种能够简化驱动多个发光二极管阵列的电路结构并使发光二极管阵列的电流平衡均匀的背光驱动装置。 背光驱动装置包括n个发光二极管阵列,其包括串联连接的多个发光二极管,用于产生驱动电流的电源,用于产生电流以使用驱动电流驱动发光二极管阵列的电流发生器 以及电流镜电路,用于基于来自n个发光二极管阵列中的任一个的电流允许基本相同量的电流分别流过发光二极管阵列。

    Backlight unit and crystal display device using the same
    96.
    发明申请
    Backlight unit and crystal display device using the same 审中-公开
    背光单元和晶体显示装置使用相同

    公开(公告)号:US20080061716A1

    公开(公告)日:2008-03-13

    申请号:US11895572

    申请日:2007-08-24

    IPC分类号: H05B37/02

    摘要: A backlight unit provides white light for a display device. A light emitting unit may include light emitting diodes (LEDs). The light emitting unit may be combined with a power supplying unit and a current balancing unit to improve the white balance of the light emitted from the LEDs and simplify the circuitry of the backlight unit. The light emitted from the light emitting unit may be balanced due in part to the current balancing unit.

    摘要翻译: 背光单元为显示设备提供白光。 发光单元可以包括发光二极管(LED)。 发光单元可以与供电单元和电流平衡单元组合,以改善从LED发射的光的白平衡并简化背光单元的电路。 从发光单元发射的光可以部分地由电流平衡单元平衡。

    Methods of manufacturing semiconductor devices
    97.
    发明授权
    Methods of manufacturing semiconductor devices 失效
    制造半导体器件的方法

    公开(公告)号:US07074702B2

    公开(公告)日:2006-07-11

    申请号:US10746837

    申请日:2003-12-26

    申请人: Seung Hyun Kim

    发明人: Seung Hyun Kim

    IPC分类号: H01L21/44

    CPC分类号: H01L21/76829

    摘要: Disclosed are methods of manufacturing semiconductor devices, which may solve problems such as a short of upper wiring, etc., which are caused by a metal residue generated during chemical mechanical polishing of metallization of the semiconductor device, by depositing a predetermined insulating layer on the metal residue. The method may include forming a first insulating layer having an opening on a semiconductor substrate, depositing a metal layer on the first insulating layer to sufficiently fill the opening, planarizing the metal layer to expose the first insulating layer, forming a second insulating layer on the exposed first insulating layer and the metal layer, selectively etching and removing the second insulating layer to expose the metal layer, and forming a metallization layer on the metal layer.

    摘要翻译: 公开了制造半导体器件的方法,其可以解决由在半导体器件的金属化的化学机械抛光期间产生的金属残留物导致的上层布线等的问题,通过在 金属残渣。 该方法可以包括在半导体衬底上形成具有开口的第一绝缘层,在第一绝缘层上沉积金属层以充分填充开口,使金属层平坦化以暴露第一绝缘层,在第二绝缘层上形成第二绝缘层 暴露的第一绝缘层和金属层,选择性地蚀刻和去除第二绝缘层以暴露金属层,以及在金属层上形成金属化层。

    Method for manufacturing metal thin film resistor
    98.
    发明授权
    Method for manufacturing metal thin film resistor 失效
    制造金属薄膜电阻的方法

    公开(公告)号:US06993828B2

    公开(公告)日:2006-02-07

    申请号:US10468725

    申请日:2002-02-22

    IPC分类号: H01C17/06

    摘要: A metal resistor and a method for manufacturing the resistor are provided. A first insulation film is formed on a substrate, a photosensitive film is applied on the insulation film, and an insulation film pattern is formed by patterning the insulation film. After a metal thin film is formed among the insulation film pattern and on the photosensitive film, with removing the photo-sensitive film is a metal thin film pattern formed among the insulation film pattern. On the metal thin film pattern and the insulation film pattern is a second insulation film formed and at the pad region of the metal thin film pattern is a lead wire connected, after that, a metal thin film resistor is manufactured with forming a preservation film on and around the lead wire. Using a pattern-forming process by etching of the insulation film for forming the metal thin film pattern, the deterioration of the device or the lowering of the durability can be overcome, the resistance of the metal thin film resistor can be easily controlled, and the resolving power can be improved by producing the high-resistance metal thin film temperature having reduced line with of the metal thin film pattern.

    摘要翻译: 提供一种金属电阻器和制造该电阻器的方法。 在基板上形成第一绝缘膜,在绝缘膜上施加感光性膜,通过图案化绝缘膜形成绝缘膜图案。 在绝缘膜图案和感光膜上形成金属薄膜之后,去除感光膜是在绝缘膜图案之间形成的金属薄膜图案。 在金属薄膜图案和绝缘膜图案上形成第二绝缘膜,并且在金属薄膜图案的焊盘区域处是连接的引线,之后制造形成保鲜膜的金属薄膜电阻器 并围绕导线。 通过蚀刻用于形成金属薄膜图案的绝缘膜的图案形成处理,可以克服器件的劣化或耐久性的降低,可以容易地控制金属薄膜电阻器的电阻,并且 通过生产具有金属薄膜图案的线路减小的高电阻金属薄膜温度,可以提高分辨率。