CHIP RESISTOR AND METHOD FOR MAKING THE SAME

    公开(公告)号:US20180108459A1

    公开(公告)日:2018-04-19

    申请号:US15842210

    申请日:2017-12-14

    Applicant: ROHM CO., LTD.

    Abstract: A chip resistor includes first and second electrodes spaced apart from each other, a resistor element arranged on the first and the second electrodes, a bonding layer provided between the resistor element and the two electrodes, and a plating layer electrically connected to the resistor element. The first electrode includes a flat outer side surface, and the resistor element includes a side surface facing in the direction in which the thirst and the second electrodes are spaced. The outer side surface of the first electrode is flush with the side surface of the resistor element. The plating layer covers at least a part of the outer side surface of the first electrode in a manner such that the covering portion of the plating layer extends from one vertical edge of the outer side surface to the other vertical edge.

    CHIP RESISTOR AND METHOD FOR MAKING THE SAME

    公开(公告)号:US20170287602A1

    公开(公告)日:2017-10-05

    申请号:US15629400

    申请日:2017-06-21

    Applicant: ROHM CO., LTD.

    Abstract: A chip resistor includes first and second electrodes spaced apart from each other, a resistor element arranged on the first and the second electrodes, a bonding layer provided between the resistor element and the two electrodes, and a plating layer electrically connected to the resistor element. The first electrode includes a flat outer side surface, and the resistor element includes a side surface facing in the direction in which the thirst and the second electrodes are spaced. The outer side surface of the first electrode is flush with the side surface of the resistor element. The plating layer covers at least a part of the outer side surface of the first electrode in a manner such that the covering portion of the plating layer extends from one vertical edge of the outer side surface to the other vertical edge.

    RESISTOR AND METHOD FOR MAKING SAME
    7.
    发明申请
    RESISTOR AND METHOD FOR MAKING SAME 有权
    电阻和制造方法

    公开(公告)号:US20160225498A1

    公开(公告)日:2016-08-04

    申请号:US15012386

    申请日:2016-02-01

    Abstract: A metal strip resistor is provided. The metal strip resistor includes a metal strip forming a resistive element and providing support for the metal strip resistor without use of a separate substrate. There are first and second opposite terminations overlaying the metal strip. There is plating on each of the first and second opposite terminations. There is also an insulating material overlaying the metal strip between the first and second opposite terminations. A method for forming a metal strip resistor wherein a metal strip provides support for the metal strip resistor without use of a separate substrate is provided. The method includes coating an insulative material to the metal strip, applying a lithographic process to form a conductive pattern overlaying the resistive material wherein the conductive pattern includes first and second opposite terminations, electroplating the conductive pattern, and adjusting resistance of the metal strip.

    Abstract translation: 提供金属条电阻。 金属带状电阻器包括形成电阻元件的金属条,并且在不使用单独基板的情况下为金属带状电阻器提供支撑。 存在覆盖金属条的第一和第二相对端子。 每个第一和第二相对端子上都有电镀。 还有在第一和第二相对端子之间覆盖金属​​带的绝缘材料。 提供一种用于形成金属带状电阻器的方法,其中金属带为不使用单独基板的金属带状电阻器提供支撑。 该方法包括将绝缘材料涂覆到金属条上,施加光刻工艺以形成覆盖电阻材料的导电图案,其中导电图案包括第一和第二相对端子,电镀导电图案,以及调整金属带的电阻。

    Method of forming back-end-of-line planar resistor
    9.
    发明授权
    Method of forming back-end-of-line planar resistor 有权
    形成后端平面电阻器的方法

    公开(公告)号:US09252201B2

    公开(公告)日:2016-02-02

    申请号:US13780942

    申请日:2013-02-28

    Abstract: A stack of an interconnect-level dielectric material layer and a disposable dielectric material layer is patterned so that at least one recessed region is formed through the disposable dielectric material layer and in an upper portion of the interconnect-level dielectric material layer. A dielectric liner layer and a metallic liner layer is formed in the at least one recessed region. At least one photoresist is applied to fill the at least one recessed region and lithographically patterned to form via cavities and/or line cavities in the interconnect-level dielectric material layer. After removing the at least one photoresist, the at least one recessed region, the via cavities, and/or the line cavities are filled with at least one metallic material, which is subsequently planarized to form at least one planar resistor having a top surface that is coplanar with top surfaces of metal lines or metal vias.

    Abstract translation: 互连级介电材料层和一次性介电材料层的堆叠被图案化,使得通过一次性介电材料层和互连级介电材料层的上部形成至少一个凹陷区域。 在所述至少一个凹部区域中形成介电衬垫层和金属衬垫层。 施加至少一个光致抗蚀剂以填充至少一个凹陷区域并且被光刻图案化以在互连级介电材料层中形成通孔和/或线腔。 在去除至少一个光致抗蚀剂之后,至少一个凹陷区域,通孔腔体和/或线腔体填充有至少一种金属材料,其随后被平坦化以形成至少一个具有顶表面的平面电阻器, 与金属线或金属通孔的顶面共面。

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