Abstract:
An organic light emitting device includes a substrate including a first region, a second region, a third region, and a fourth region, a thin film structure formed on the substrate, first, second, and third color filters formed on the thin film structure, and respectively disposed in the first, second, and third regions, an insulating layer formed on the first to third color filters and the thin film structure, first, second, third, and fourth translucent members formed on the insulating layer, and respectively disposed in the first, second, third, and fourth regions, first, second, third, and fourth pixel electrodes respectively formed on the first, second, third, and fourth translucent members, an organic light emitting member for emitting white light formed on the first to fourth pixel electrodes; and a common electrode formed on the organic light emitting member.
Abstract:
A method of programming a non-volatile memory device includes receiving data to be programmed into memory cells of the memory device, programming the memory cells with the data, and selectively performing one of a plurality of program verify operations based on a current program loop number to determine whether the memory cells have been successfully programmed. For example, one of a wired-OR pass/fail check operation and a Y-scan pass/fail check operation may be performed according to the current program loop number. Related methods and devices are also discussed.
Abstract:
An organic light emitting device includes: a substrate; thin film structures formed on the substrate; a pixel electrode including a metal layer formed on the thin film structures, and a transparent conductor layer formed on the metal layer; a common electrode facing the pixel electrode; and an organic light emitting member disposed between the pixel electrode and the common electrode, wherein the organic light emitting member includes an emission layer and a plurality of auxiliary layers, and the profile thickness of a first layer as at least one layer among the emission layer and the auxiliary layers on the substrate is different from the profile thickness of at least one second layer that is different from the first layer among the emission layer and the auxiliary layers.
Abstract:
A display device is provided. The display device includes a substrate, a light blocking member formed on the substrate as a plurality of light blocking portions separated from each other, a thin film transistor including a gate line, a data line, and a semiconductor layer formed on the light blocking member, a plurality of color filters formed on the gate line, the data line, and the thin film transistor, a pixel electrode formed on the color filters and connected to the thin film transistor, and a light blocking filter covering a portion of a separation region separating the light blocking portions.
Abstract:
In a method of manufacturing an organic light emitting display, an organic light emitting layer and a second electrode are sequentially formed on a first sub-electrode, and a laser beam is irradiated onto the organic light emitting layer to partially remove the organic light emitting layer, so that the first sub-electrode is electrically connected to the second electrode. Thus, even though the second electrode is formed to have a small thickness in order to maximize an amount of light that is generated by the organic light emitting layer and exits to an exterior through the second electrode, the second electrode is electrically connected to the first sub-electrode, thereby reducing an electrical resistance of the second electrode.
Abstract:
Provided is a method of programming the flash memory device including setting increments of program voltages according to data states expressed as threshold voltage distributions of multi-level memory cells. An Increment Step Pulse Programming (ISPP) clock signal corresponds to a loop clock signal and the increments of the program voltages and is generated in response to program pass/fail information. A default level enable signal is generated by performing a counting operation until reaching the increments of the program voltages, in response to the loop clock signal. An additional level enable signal is generated by performing a counting operation until reaching the increments of the program voltages, in response to the ISPP clock signal. The program voltage is increased by 1 increment, in response to the default level enable signal. The program voltage is increased by 2 increments, in response to the additional level enable signal.
Abstract:
An organic light emitting diode (“OLED”) display includes first to third pixels each displaying a different color, wherein each pixel includes a first electrode, a second electrode facing the first electrode, and an emission layer positioned between the first and second electrodes, wherein first electrodes of first and second pixels are a single layer including a conductive oxide, respectively. A first electrode of the third pixel includes a lower first electrode including a conductive oxide, an intermediate first electrode formed on the lower first electrode and including a semitransparent conductor which forms microcavities with the second electrode, and an upper first electrode formed on the intermediate first electrode and including a conductive oxide. A method for manufacturing the OLED is also disclosed.
Abstract:
An organic light emitting device includes first, second, and third pixels each displaying a different color. Each pixel includes a first electrode, a second electrode facing the first electrode, and an emission layer between the first and second electrodes. The first electrodes of the first and second pixels respectively include a first transparent conductive layer and a translucent conductive layer disposed on at least one of lower and upper portions of the first transparent conductive layer and forming microcavities together with the second electrodes, and the first electrode of the third pixel includes a second transparent conductive layer that is different from the first transparent conductive layer and a translucent conductive layer disposed on at least one of upper and lower portions of the second transparent conductive layer and forming a microcavity together with the second electrode.
Abstract:
Disclosed is a page buffer having a wired-OR type structure and a cache function which is adapted for use in a nonvolatile semiconductor memory device and a method of programming same. The page buffer embeds the cache latch block in relation to the cache function. Moreover, the nonvolatile semiconductor memory device includes an output driver enabling an internal output line to be unidirectional driven, thereby enabling a program-verifying operation using the wired-OR scheme.
Abstract:
A method of programming a non-volatile memory device includes receiving data to be programmed into memory cells of the memory device, programming the memory cells with the data, and selectively performing one of a plurality of program verify operations based on a current program loop number to determine whether the memory cells have been successfully programmed. For example, one of a wired-OR pass/fail check operation and a Y-scan pass/fail check operation may be performed according to the current program loop number. Related methods and devices are also discussed.