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91.发明申请公开(公告)号：US20190234763A1
公开(公告)日：2019-08-01
申请号：US15883721
申请日：2018-01-30
Applicant: ALLEGRO MICROSYSTEMS, LLC
Inventor： Andrea Foletto , Rémy Lassalle-Balier , Yannick Vuillermet , Paul A. David , Jeffrey Eagen
CPC classification number: G01D5/145 , G01D5/165 , G01R33/025 , G01R33/09 , G01R33/093
Abstract: Methods and apparatus for a sensor system having a first magnetic field sensing element with first and second segments where the first and second segments are located at positions to generate magnetic field bias in opposite directions for reducing sensitivity due to misalignment of the first and second segments. A processing module is configured to receive an output of the magnetic field sensing element.
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公开(公告)号：US20190109072A1
公开(公告)日：2019-04-11
申请号：US15727126
申请日：2017-10-06
Applicant: Allegro MicroSystems, LLC
Inventor： Paul A. David , William P. Taylor
Abstract: An integrated circuit package includes a lead frame having a first surface, a second opposing surface, at least one die attach portion configured to support at least one die, and a plurality of leads, wherein at least one of the leads has a raised feature extending along a portion of a length of the lead.
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公开(公告)号：US10254103B2
公开(公告)日：2019-04-09
申请号：US15655135
申请日：2017-07-20
Applicant: Allegro MicroSystems, LLC
Inventor： William P. Taylor , P. Karl Scheller , Paul A. David
Abstract: A magnetic field sensor for sensing motion of a ferromagnetic object comprises a substrate. The substrate includes first and second major surfaces, each having a width dimension and a length dimension. The magnetic field sensor further comprises a magnet. The magnet includes a first major surface proximate to the substrate, the first major surface of the magnet heaving a width and a length, and a second major surface. The magnetic field sensor further includes first and second magnetic field sensing dements. The first magnetic field sensing element and the second magnetic field sensing element are positioned beyond respective ends of the width of the magnet. The second magnetic field sensing element is substantially farther from the ferromagnetic object than the first magnetic field sensing element. A line passing through the first and second magnetic field sensing elements is perpendicular to the magnet axis.
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公开(公告)号：US10230006B2
公开(公告)日：2019-03-12
申请号：US15618251
申请日：2017-06-09
Applicant: Allegro MicroSystems, LLC
Inventor： Ravi Vig , William P. Taylor , Paul A. David , P. Karl Scheller , Andreas P. Friedrich
Abstract: A magnetic field sensor includes a lead frame, a semiconductor die having a first surface in which a magnetic field sensing element is disposed and a second surface attached to the lead frame, and a non-conductive mold material enclosing the die and at least a portion of the lead frame. The sensor may include a ferromagnetic mold material secured to a portion of the non-conductive mold material. An electromagnetic suppressor comprising a ferromagnetic material encloses a passive device spaced from the non-conductive mold material and coupled to a plurality of leads.
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公开(公告)号：US20190033096A1
公开(公告)日：2019-01-31
申请号：US16136844
申请日：2018-09-20
Applicant: Allegro MicroSystems, LLC
Inventor： Paul A. David , William P. Taylor
Abstract: A magnetic field sensor has a plurality of magnetic field sensing elements and operates as a motion detector for sensing a rotation or other movement of a target object.
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Patent Agency Ranking
公开(公告)号：US20180299517A1
公开(公告)日：2018-10-18
申请号：US16018291
申请日：2018-06-26
Applicant: Allegro MicroSystems, LLC
Inventor： Paul A. David , William P. Taylor
CPC classification number: G01R33/09 , G01R33/0052 , G01R33/093 , G01R33/098
Abstract: In one aspect, an integrated circuit (IC) includes a sensor that includes a first magnetoresistive (MR) element and a second MR element less active to a presence of a magnetic field than the first MR element. The second MR element includes a metal layer diffused into other layers of the second MR element.
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公开(公告)号：US20180017638A1
公开(公告)日：2018-01-18
申请号：US15212643
申请日：2016-07-18
Applicant: Allegro MicroSystems, LLC
Inventor： Paul A. David , William P. Taylor
CPC classification number: G01R33/09 , G01R33/0052 , G01R33/093 , G01R33/098
Abstract: In one aspect, an integrated circuit (IC) includes a sensor that includes a first magnetoresistive (MR) element and a second MR element less active to a presence of a magnetic field than the first MR element. The second MR element includes a metal layer diffused into other layers of the second MR element.
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公开(公告)号：US09719806B2
公开(公告)日：2017-08-01
申请号：US14529577
申请日：2014-10-31
Applicant: Allegro MicroSystems, LLC
Inventor： Andrea Foletto , Jeffrey Eagen , Paul A. David
CPC classification number: G01D5/2046 , G01D5/145 , G01R33/09
Abstract: A magnetic field sensor operates as a motion detector for sensing a movement of a ferromagnetic target object having features. The magnetic field sensor has a plurality of magnetoresistance elements to generate, in a first channel, a feature signal indicative of a proximity of a feature of a ferromagnetic target object and, in a second channel, an edge signal indicative of a proximity of an edge of a feature of a ferromagnetic target object.
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99.发明授权公开(公告)号：US09605979B2
公开(公告)日：2017-03-28
申请号：US15080966
申请日：2016-03-25
Applicant: Allegro MicroSystems, LLC
Inventor： Jeffrey Eagen , Paul A. David
CPC classification number: G01D5/16 , G01D5/147 , G01R15/205 , G01R33/0082 , G01R33/091 , G11B5/3958 , H01F1/055
Abstract: In an embodiment, a magnetic field sensor comprises a substrate and a first magnetoresistive element supported by the substrate. The magnetic field sensor also includes a second magnetoresistive element supported by the substrate and coupled in series with the first magnetoresistive element to form a voltage node between the first and second magnetoresistive elements, and at which an output voltage is provided that changes in response to an external magnetic field. The magnetic field sensor also includes a magnetic source that produces a local magnetic field having a strength sufficient to bias the first magnetoresistive element to a resistive value that is substantially resistant to changing in response to the external magnetic field. In embodiments, additional magnetoresistive elements are included to form an H-bridge circuit.
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100.发明授权Anisotropic magnetoresistive (AMR) sensors and techniques for fabricating same 有权各向异性磁阻（AMR）传感器及其制造技术公开(公告)号：US08848320B1
公开(公告)日：2014-09-30
申请号：US14043057
申请日：2013-10-01
Applicant: Allegro Microsystems, LLC
Inventor： Paul A. David , William P. Taylor , Bryan Cadugan
IPC: G11B5/33
CPC classification number: G01R33/096
Abstract: Novel anisotropic magneto-resistive (AMR) sensor architectures and techniques for fabricating same are described. In some embodiments, AMR sensors having barber pole structures disposed below corresponding AMR sensing elements are provided. AMR sensors having segmented AMR sensing elements are also described. Fabrication techniques that can be used to fabricate such sensors are also described. Fabrication techniques are also described that can reduce the risk of contamination during AMR sensor fabrication.
Abstract translation: 描述了新型各向异性磁阻（AMR）传感器体系结构及其制造技术。 在一些实施例中，提供了具有设置在相应的AMR感测元件下方的理发杆结构的AMR传感器。 还描述了具有分段的AMR感测元件的AMR传感器。 还描述了可用于制造这种传感器的制造技术。 还描述了可以降低AMR传感器制造期间污染风险的制造技术。
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