LINEAR BRIDGES HAVING NONLINEAR ELEMENTS

    公开(公告)号:US20210293910A1

    公开(公告)日:2021-09-23

    申请号:US16822488

    申请日:2020-03-18

    IPC分类号: G01R33/09 G01D5/14

    摘要: In one aspect, a bridge includes a first magnetoresistance element having a first reference angle, a second magnetoresistance element in series with the first magnetoresistance element and having a second reference angle, a third magnetoresistance element in parallel with the first magnetoresistance element and having the first reference angle and a fourth magnetoresistance element in series with the third magnetoresistance element and having the second reference angle. An output of the bridge has a linear response over a range of horizontal magnetic field values not centered about a zero value and a reference angle indicates an angle the magnetoresistance element is most sensitive to changes in a magnetic field.

    Magnetic field sensor able to identify an error condition

    公开(公告)号:US10921373B2

    公开(公告)日:2021-02-16

    申请号:US15825879

    申请日:2017-11-29

    摘要: A method of determining an error condition in a magnetic field sensor can include receiving a first bridge signal, the first bridge signal generated by a first full bridge circuit. The method can also include receiving a second bridge signal, the second bridge signal generated by a second full bridge circuit. The method can also include determining a bridge separation from the first bridge signal and the second bridge signal. The method can also include comparing a function of the bridge separation to a threshold value. The method can also include generating an error signal indicative of the error condition or not indicative of the error condition in response to the comparing.

    MAGNETIC FIELD SENSOR WITH MAGNETORESISTANCE ELEMENTS HAVING VARYING SENSITIVITY

    公开(公告)号:US20200041584A1

    公开(公告)日:2020-02-06

    申请号:US16055644

    申请日:2018-08-06

    摘要: A magnetic field sensor includes a substrate having a surface and a plurality of magnetoresistance elements supported by the surface of the substrate. Each magnetoresistance element has a respective width parallel to the surface, and each width may be a smallest dimension parallel to the surface. A first width of a first magnetoresistance element of the plurality of magnetoresistance elements may be different from a second width of a second magnetoresistance element of the plurality of magnetoresistance elements. A processing circuit may be coupled to the plurality of magnetoresistance elements to receive a signal representing a detected magnetic field from at least one of the magnetoresistance elements.

    REDUCING ANGLE ERROR IN A MAGNETIC FIELD ANGLE SENSOR

    公开(公告)号:US20190383646A1

    公开(公告)日:2019-12-19

    申请号:US16553641

    申请日:2019-08-28

    IPC分类号: G01D5/16

    摘要: In one aspect, a magnetic field angle sensor includes a bridge structure that include a sine bridge configured to generate a sinusoidal signal indicative of a magnetic field along a first axis and a cosine bridge configured to generate a cosinusoidal signal indicative of the magnetic field along a second axis that is orthogonal with respect to the first axis. One of the sine bridge or the cosine bridge includes a first set of at least two magnetoresistance elements, a second set of at least one magnetoresistance element, a third set of at least one magnetoresistance element and a fourth set of at least one magnetoresistance element. An average reference direction of the first set of at least two magnetoresistance elements is equal to an average reference direction of the third set of at least one magnetoresistance element. An average reference direction of the second set of at least one magnetoresistance element is equal to an average direction angle of the fourth set of at least one magnetoresistance element.

    Spin Valve With Bias Alignment
    6.
    发明申请

    公开(公告)号:US20190259520A1

    公开(公告)日:2019-08-22

    申请号:US15901301

    申请日:2018-02-21

    IPC分类号: H01F10/32 G01R33/09

    摘要: A magnetoresistance element (e.g. a spin valve) for detecting a changing magnetic field includes a pinning layer, pinned layer adjacent to the pinning layer, a spacer layer adjacent to the pinned layer, and a free layer adjacent to the spacer layer and arranged so that the spacer layer is between the pinned layer and the free layer. The pinned layer has a bias with a bias direction configured to reduce an effect of a static field on the detection of the changing magnetic field.

    MAGNETORESISTANCE ELEMENT WITH INCREASED OPERATIONAL RANGE

    公开(公告)号:US20180335486A1

    公开(公告)日:2018-11-22

    申请号:US15991491

    申请日:2018-05-29

    IPC分类号: G01R33/09 H01L43/08 H01L43/10

    CPC分类号: G01R33/0005 G01R33/093

    摘要: A magnetoresistance (MR) element includes a first stack portion comprising a first plurality of layers including a first spacer layer having a first thickness and a first material selected to result in the first stack portion having a first sensitivity to the applied magnetic field. The MR element also has a second stack portion comprising a second plurality of layers, including a second spacer layer having a second thickness to result in the second stack portion having a second sensitivity to the applied magnetic field. The first thickness may be different than the second thickness resulting in the first sensitivity being different than the second sensitivity.

    LAYOUT OF MAGNETORESISTANCE ELEMENT

    公开(公告)号:US20210293911A1

    公开(公告)日:2021-09-23

    申请号:US16825368

    申请日:2020-03-20

    摘要: In one aspect, a bridge includes a first magnetoresistance element that includes a first set of pillars, a second magnetoresistance element that includes a second set of pillars, a third magnetoresistance element that includes a third set of pillars and a fourth magnetoresistance element that includes a fourth set of pillars. The first set of pillars and the fourth set of pillars are disposed in a first matrix and the second set of pillars and the third set of pillars are disposed in a second matrix. The second magnetoresistance element is in series with the first magnetoresistance element, the third magnetoresistance element is in parallel with the first magnetoresistance element and the fourth magnetoresistance element is in series with the third magnetoresistance element.