公开(公告)号：US20150372256A1

公开(公告)日：2015-12-24

申请号：US14421389

申请日：2014-03-19

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zhiqiang Jiao ,  Li Sun

IPC: H01L51/52 ,  H01L51/56 ,  H01L27/32

CPC classification number: H01L51/5253 ,  H01L27/3246 ,  H01L51/5259 ,  H01L51/56

Abstract: Embodiments of the present invention disclose a display back plate. The display back plate comprises: an array substrate; and a pixel define layer formed on the array substrate and for defining an organic light emitting unit. An accommodation space is provided in the pixel define layer and a water absorbent material is provided within the accommodation space; the accommodation space has an opening formed in an upper surface and/or a lower surface of the pixel define layer; and the accommodation space is separated from the organic light emitting unit such that the water absorbent material within the accommodation space is spaced away from the organic light emitting unit. Embodiments of the present invention enable absorption of water vapour inside the organic light emitting display device, to prevent the adverse affection of water vapour on performance of the organic light emitting display device, so as to prolong service life of the organic light emitting display device.

Abstract translation: 本发明的实施例公开了一种显示器背板。 显示背板包括：阵列基板; 以及形成在阵列基板上并用于限定有机发光单元的像素限定层。 在像素限定层中设置容纳空间，并且在容纳空间内设置吸水材料; 容纳空间具有形成在像素限定层的上表面和/或下表面中的开口; 并且容纳空间与有机发光单元分离，使得容纳空间内的吸水材料与有机发光单元间隔开。 本发明的实施方式能够吸收有机发光显示装置内的水蒸气，以防止水蒸汽对有机发光显示装置的性能的不良影响，从而延长有机发光显示装置的使用寿命。

公开(公告)号：US09218957B2

公开(公告)日：2015-12-22

申请号：US13703537

申请日：2012-09-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanzhao Li ,  Gang Wang ,  Li Sun ,  Shuang Guan

IPC: H01L21/265 ,  H01L27/12 ,  H01L21/02 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  H01L21/28

CPC classification number: H01L21/02238 ,  H01L21/28158 ,  H01L27/1222 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

Abstract: Embodiments of the present invention provide a thin film transistor, a manufacturing method thereof and a display device. The method for manufacturing the thin film transistor, comprising the following steps: providing a substrate; forming a semiconductor layer on the substrate; forming a gate insulating layer; and forming a gate electrode, wherein the gate insulating layer comprises a first gate insulating layer, the first gate insulating layer being formed by oxidizing a portion of the semiconductor layer, and the unoxidized portion of the semiconductor layer forming an active layer, and wherein the gate electrode is formed in such a way that the gate insulating layer is sandwiched between the gate electrode and the active layer.

Abstract translation: 本发明的实施例提供一种薄膜晶体管，其制造方法和显示装置。 制造薄膜晶体管的方法包括以下步骤：提供衬底; 在所述基板上形成半导体层; 形成栅极绝缘层; 以及形成栅电极，其中所述栅极绝缘层包括第一栅极绝缘层，所述第一栅极绝缘层通过氧化所述半导体层的一部分和形成有源层的所述半导体层的未氧化部分形成，并且其中 栅电极形成为使得栅极绝缘层夹在栅电极和有源层之间。

公开(公告)号：US20140124787A1

公开(公告)日：2014-05-08

申请号：US13703537

申请日：2012-09-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanzhao Li ,  Gang Wang ,  Li Sun ,  Shuang Guan

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L21/02238 ,  H01L21/28158 ,  H01L27/1222 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

Abstract: Embodiments of the present invention provide a thin film transistor, a manufacturing method thereof and a display device. The method for manufacturing the thin film transistor, comprising the following steps: providing a substrate; forming a semiconductor layer on the substrate; forming a gate insulating layer; and forming a gate electrode, wherein the gate insulating layer comprises a first gate insulating layer, the first gate insulating layer being formed by oxidizing a portion of the semiconductor layer, and the unoxidized portion of the semiconductor layer forming an active layer, and wherein the gate electrode is formed in such a way that the gate insulating layer is sandwiched between the gate electrode and the active layer.

Abstract translation: 本发明的实施例提供一种薄膜晶体管，其制造方法和显示装置。 制造薄膜晶体管的方法包括以下步骤：提供衬底; 在所述基板上形成半导体层; 形成栅极绝缘层; 以及形成栅电极，其中所述栅极绝缘层包括第一栅极绝缘层，所述第一栅极绝缘层通过氧化所述半导体层的一部分和形成有源层的所述半导体层的未氧化部分形成，并且其中 栅电极形成为使得栅极绝缘层夹在栅电极和有源层之间。