公开(公告)号：US09218957B2

公开(公告)日：2015-12-22

申请号：US13703537

申请日：2012-09-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanzhao Li ,  Gang Wang ,  Li Sun ,  Shuang Guan

IPC: H01L21/265 ,  H01L27/12 ,  H01L21/02 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  H01L21/28

CPC classification number: H01L21/02238 ,  H01L21/28158 ,  H01L27/1222 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

Abstract: Embodiments of the present invention provide a thin film transistor, a manufacturing method thereof and a display device. The method for manufacturing the thin film transistor, comprising the following steps: providing a substrate; forming a semiconductor layer on the substrate; forming a gate insulating layer; and forming a gate electrode, wherein the gate insulating layer comprises a first gate insulating layer, the first gate insulating layer being formed by oxidizing a portion of the semiconductor layer, and the unoxidized portion of the semiconductor layer forming an active layer, and wherein the gate electrode is formed in such a way that the gate insulating layer is sandwiched between the gate electrode and the active layer.

Abstract translation: 本发明的实施例提供一种薄膜晶体管，其制造方法和显示装置。 制造薄膜晶体管的方法包括以下步骤：提供衬底; 在所述基板上形成半导体层; 形成栅极绝缘层; 以及形成栅电极，其中所述栅极绝缘层包括第一栅极绝缘层，所述第一栅极绝缘层通过氧化所述半导体层的一部分和形成有源层的所述半导体层的未氧化部分形成，并且其中 栅电极形成为使得栅极绝缘层夹在栅电极和有源层之间。

公开(公告)号：US20140124787A1

公开(公告)日：2014-05-08

申请号：US13703537

申请日：2012-09-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanzhao Li ,  Gang Wang ,  Li Sun ,  Shuang Guan

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L21/02238 ,  H01L21/28158 ,  H01L27/1222 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

Abstract: Embodiments of the present invention provide a thin film transistor, a manufacturing method thereof and a display device. The method for manufacturing the thin film transistor, comprising the following steps: providing a substrate; forming a semiconductor layer on the substrate; forming a gate insulating layer; and forming a gate electrode, wherein the gate insulating layer comprises a first gate insulating layer, the first gate insulating layer being formed by oxidizing a portion of the semiconductor layer, and the unoxidized portion of the semiconductor layer forming an active layer, and wherein the gate electrode is formed in such a way that the gate insulating layer is sandwiched between the gate electrode and the active layer.

Abstract translation: 本发明的实施例提供一种薄膜晶体管，其制造方法和显示装置。 制造薄膜晶体管的方法包括以下步骤：提供衬底; 在所述基板上形成半导体层; 形成栅极绝缘层; 以及形成栅电极，其中所述栅极绝缘层包括第一栅极绝缘层，所述第一栅极绝缘层通过氧化所述半导体层的一部分和形成有源层的所述半导体层的未氧化部分形成，并且其中 栅电极形成为使得栅极绝缘层夹在栅电极和有源层之间。