公开(公告)号：US6017819A

公开(公告)日：2000-01-25

申请号：US970715

申请日：1997-11-14

申请人： Lawrence N. Brigham ,  Chia-Hong Jan ,  Binglong Zhang

发明人： Lawrence N. Brigham ,  Chia-Hong Jan ,  Binglong Zhang

IPC分类号： H01L21/027 ,  H01L21/28 ,  H01L29/49 ,  H01L21/3213 ,  H01L21/324 ,  H01L21/441

CPC分类号： H01L29/4925 ,  H01L21/0276 ,  H01L21/28035 ,  H01L21/28123 ,  Y10S438/952

摘要： A polysilicon/amorphous silicon composite layer for improved linewidth control in the patterning of gate electrodes, in the manufacture of metal oxide semiconductor (MOS) devices. The formation of a composite polysilicon/amorphous silicon gate in an integrated circuit gives the device the electrical performance and doping qualities of a polysilicon gate and also gives the device the smoothness of an amorphous silicon gate which improves line definition during gate patterning.

摘要翻译： 在金属氧化物半导体（MOS）器件的制造中，用于在门电极的图形化中改善线宽控制的多晶硅/非晶硅复合层。 在集成电路中形成复合多晶硅/非晶硅栅极为器件提供了多晶硅栅极的电性能和掺杂质量，并且还为器件提供非晶硅栅极的平滑度，从而改善栅极图案化过程中线的定义。