公开(公告)号：US20090236600A1

公开(公告)日：2009-09-24

申请号：US12398295

申请日：2009-03-05

申请人： Shunpei YAMAZAKI ,  Yoshiyuki KUROKAWA ,  Hiromichi GODO ,  Hidekazu MIYAIRI

发明人： Shunpei YAMAZAKI ,  Yoshiyuki KUROKAWA ,  Hiromichi GODO ,  Hidekazu MIYAIRI

IPC分类号： H01L29/04

CPC分类号： H01L29/78696 ,  H01L29/04 ,  H01L29/66765

摘要： A thin film transistor is provided, which includes a gate insulating layer covering a gate electrode, a microcrystalline semiconductor layer provided over the gate insulating layer, an amorphous semiconductor layer overlapping the microcrystalline semiconductor layer and the gate insulating layer, and a pair of impurity semiconductor layers which are provided over the amorphous semiconductor layer and to which an impurity element imparting one conductivity type is added to form a source region and a drain region. The gate insulating layer has a step adjacent to a portion in contact with an end portion of the microcrystalline semiconductor layer. A second thickness of the gate insulating layer in a portion outside the microcrystalline semiconductor layer is smaller than a first thickness thereof in a portion in contact with the microcrystalline semiconductor layer.

摘要翻译： 提供一种薄膜晶体管，其包括覆盖栅极的栅极绝缘层，设置在栅极绝缘层上的微晶半导体层，与微晶半导体层和栅极绝缘层重叠的非晶半导体层，以及一对杂质半导体 提供在非晶半导体层上并且添加赋予一种导电类型的杂质元素以形成源区和漏区的层。 栅极绝缘层具有与微晶半导体层的端部接触的部分相邻的台阶。 在与微晶半导体层接触的部分中，微晶半导体层外部的栅极绝缘层的第二厚度小于其第一厚度。

公开(公告)号：US20090004821A1

公开(公告)日：2009-01-01

申请号：US12141551

申请日：2008-06-18

申请人： Akihisa SHIMOMURA ,  Hidekazu MIYAIRI ,  Yurika SATO

发明人： Akihisa SHIMOMURA ,  Hidekazu MIYAIRI ,  Yurika SATO

IPC分类号： H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： An effect of metal contamination caused in manufacturing an SOI substrate can is suppressed. A damaged region is formed by irradiating a semiconductor substrate with hydrogen ions, and then, a base substrate and the semiconductor substrate are bonded to each other. Heat treatment is performed thereon to cleave the semiconductor substrate, so that an SOI substrate is manufactured. A gettering site layer is formed of a semiconductor containing a Group 18 element such as Ar, over a semiconductor layer of the SOI substrate. Heat treatment is performed thereon to perform gettering of a metal element in the semiconductor layer with the gettering site layer. By removing the gettering site layer by etching, thinning of the semiconductor layer can be performed.

摘要翻译： 抑制了制造SOI衬底的金属污染的影响。 通过用半导体衬底照射氢离子形成损伤区域，然后将基底衬底和半导体衬底相互结合。 对其进行热处理以切割半导体衬底，从而制造SOI衬底。 吸收位置层由在SOI衬底的半导体层上含有诸如Ar的第18族元素的半导体形成。 在其上进行热处理以利用吸杂位点层进行半导体层中的金属元素的吸杂。 通过蚀刻去除吸杂位点层，可以进行半导体层的薄化。