公开(公告)号：US4989052A

公开(公告)日：1991-01-29

申请号：US207991

申请日：1988-06-17

申请人： Makoto Okada ,  Naoki Yokoyama

发明人： Makoto Okada ,  Naoki Yokoyama

IPC分类号： H01L29/201 ,  H01L21/306 ,  H01L21/335 ,  H01L21/338 ,  H01L29/06 ,  H01L29/15 ,  H01L29/205 ,  H01L29/775 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812

CPC分类号： B82Y10/00 ,  H01L21/30621 ,  H01L29/158 ,  H01L29/205 ,  H01L29/66469 ,  H01L29/775

摘要： A quantum effect semiconductor device a channel layer which is substantially a non-doped semiconductor and an n-type (or p-type) carrier supplying layer which is formed on a substrate and having a smaller electron affinity than the channel layer, and an n-type (or p-type) cap layer selectively formed on the carrier supplying layer so that an electron gas layer is formed only at a portion of the channel layer which is immediately under the cap layer.

摘要翻译： 量子效应半导体器件，基本上是非掺杂半导体的沟道层和形成在衬底上并且具有比沟道层更小的电子亲和力的n型（或p型）载流子供给层，n 型（或p型）盖层，其选择性地形成在载体供给层上，使得电子气层仅形成在封装层正下方的沟道层的部分。