Non-charging critical dimension SEM metrology standard
    91.
    发明授权
    Non-charging critical dimension SEM metrology standard 失效
    非充电临界尺寸SEM测量标准

    公开(公告)号:US06420702B1

    公开(公告)日:2002-07-16

    申请号:US09611641

    申请日:2000-07-07

    IPC分类号: H01J3728

    摘要: An SEM measurement standard for measuring linewidths of 0.1 microns and below utilizes two different conducting materials in order to prevent charging effects. The top material is selected to use grain morphology to focus secondary electrons, and to obtain improved image contrast. The inventive standard is comprised of materials which are commonly used in semiconductor manufacturing and which do not cause contamination of fabrication facilities.

    摘要翻译: 用于测量0.1微米及以下线宽的SEM测量标准使用两种不同的导电材料,以防止充电效应。 选择顶部材料以使用晶粒形态来聚焦二次电子,并获得改善的图像对比度。 本发明的标准由通常用于半导体制造并且不会引起制造设备污染的材料组成。

    Nozzle arm movement for resist development
    92.
    发明授权
    Nozzle arm movement for resist development 有权
    喷嘴臂运动用于抗蚀剂开发

    公开(公告)号:US06270579B1

    公开(公告)日:2001-08-07

    申请号:US09429995

    申请日:1999-10-29

    IPC分类号: B05C1102

    CPC分类号: H01L21/6715 G03F7/3028

    摘要: A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a multiple tip nozzle and a movement system that moves the nozzle to an operating position above a central region of a photoresist material layer located on a substrate, and applies a volume of developer as the nozzle scan moves across a predetermined path. The movement system moves the nozzle in two dimensions by providing an arm that has a first arm member that is pivotable about a first rotational axis and a second arm member that is pivotable about a second rotational axis or is movable along a translational axis. The system also provides a measurement system that measures the thickness uniformity of the developed photoresist material layer disposed on a test wafer. The thickness uniformity data is used to reconfigure the predetermined path of the nozzle as the developer is applied. The thickness uniformity data can also be used to adjust the volume of developer applied along the path and/or the volume flow rate.

    摘要翻译: 提供了一种有助于在光致抗蚀剂材料层上施加均匀的显影剂材料层的系统和方法。 该系统包括多个尖端喷嘴和运动系统,该运动系统将喷嘴移动到位于基板上的光致抗蚀剂材料层的中心区域上方的操作位置,并且当喷嘴扫描移动穿过预定路径时施加一定体积的显影剂。 移动系统通过提供具有第一臂构件的臂来移动喷嘴,该臂具有可围绕第一旋转轴线枢转的第一臂构件和可围绕第二旋转轴线枢转或可沿着平移轴线移动的第二臂构件。 该系统还提供了测量设置在测试晶片上的显影的光致抗蚀剂材料层的厚度均匀性的测量系统。 当施加显影剂时,厚度均匀性数据用于重新配置喷嘴的预定路径。 厚度均匀性数据也可用于调节沿路径施加的显影剂的体积和/或体积流量。

    CD uniformity by active control of developer temperature
    93.
    发明授权
    CD uniformity by active control of developer temperature 有权
    通过主动控制显影剂温度的CD均匀性

    公开(公告)号:US06196734B1

    公开(公告)日:2001-03-06

    申请号:US09410955

    申请日:1999-10-05

    IPC分类号: G03D500

    CPC分类号: G03D13/006

    摘要: A system for regulating temperature of a developer is provided. The system includes a plurality of optical fibers, each optical fiber directing radiation to respective portions of the developer. Radiation reflected from the respective portions are collected by a measuring system which processes the collected radiation. The reflected radiation are indicative of the temperature of the respective portions of the developer. The measuring system provides developer temperature related data to a processor which determines the temperature of the respective portions of the developer. The system also includes a plurality of heating devices; each heating device corresponds to a respective portion of the developer and provides for the heating thereof. The processor selectively controls the heating devices so as to regulate temperature of the respective portions of the developer.

    摘要翻译: 提供了一种用于调节显影剂温度的系统。 该系统包括多个光纤,每个光纤将辐射引导到显影剂的相应部分。 从相应部分反射的辐射由处理收集的辐射的测量系统收集。 反射的辐射表示显影剂各部分的温度。 测量系统将显影剂温度相关数据提供给确定显影剂各部分的温度的处理器。 该系统还包括多个加热装置; 每个加热装置对应于显影剂的相应部分并提供其加热。 处理器选择性地控制加热装置,以便调节显影剂各部分的温度。