公开(公告)号：US06528856B1

公开(公告)日：2003-03-04

申请号：US09212773

申请日：1998-12-15

Applicant: Gang Bai ,  David B. Fraser ,  Brian S. Doyle ,  Peng Cheng ,  Chunlin Liang

Inventor： Gang Bai ,  David B. Fraser ,  Brian S. Doyle ,  Peng Cheng ,  Chunlin Liang

IPC: H01L2976

CPC classification number: H01L29/513 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/28229 ,  H01L29/517

Abstract: A method of forming a dielectric layer suitable for use as the gate dielectric layer of a metal-oxide-semiconductor field effect transistor (MOSFET) includes oxidizing the surface of a silicon substrate, forming a metal layer over the oxidized surface, and reacting the metal with the oxidized surface to form a substantially intrinsic layer of silicon superjacent the substrate, wherein at least a portion of the silicon layer may be an epitaxial silicon layer, and a metal oxide layer superjacent the silicon layer. In a further aspect of the present invention, an integrated circuit includes a plurality of MOSFETs, wherein various ones of the plurality of transistors have metal oxide gate dielectric layers and substantially intrinsic silicon layers subjacent the metal oxide dielectric layers.

Abstract translation: 形成适合用作金属氧化物半导体场效应晶体管（MOSFET）的栅极电介质层的电介质层的方法包括氧化硅衬底的表面，在氧化表面上形成金属层，并使金属 与氧化表面形成超过衬底的基本上本征的硅层，其中硅层的至少一部分可以是外延硅层，以及位于硅层之上的金属氧化物层。 在本发明的另一方面，集成电路包括多个MOSFET，其中多个晶体管中的各个晶体管具有金属氧化物栅极电介质层和位于金属氧化物电介质层之下的基本上本征的硅层。

公开(公告)号：US5536684A

公开(公告)日：1996-07-16

申请号：US269440

申请日：1994-06-30

Applicant: M. Lawrence A. Dass ,  Peng Cheng ,  David B. Fraser

Inventor： M. Lawrence A. Dass ,  Peng Cheng ,  David B. Fraser

IPC: H01L21/225 ,  H01L21/285 ,  H01L21/441

CPC classification number: H01L21/28518 ,  H01L21/2257 ,  Y10S148/015 ,  Y10S148/035 ,  Y10S148/147

Abstract: A process for the formation of a planar epitaxial cobalt silicide and for the formation of shallow conformal junctions for use in semiconductor processing. A cobalt silicide and titanium nitride bilayer is formed. The titanium nitride layer is chemically removed. Ions with or without a dopant are then implanted into the cobalt silicide layer. During the ion implantation, at least a portion of the cobalt silicide layer is transformed into an amorphous cobalt silicon mixture while the non-amorphous portion remains single crystal. If the ion implantation contains dopants, then after the implantation is completed, both the amorphous and non-amorphous portions of the cobalt silicide layer contain the dopants. The substrate is then annealed in either an ambient comprising a nitrogen gas or in an oxidizing ambient. During the anneal, the amorphous portion of the silicon substrate recrystallizes into a single crystal cobalt silicide layer. If the cobalt silicide layer after the ion implantation contain dopants, then during the anneal the dopants are driven out of the cobalt silicide layer and diffuse into the silicon substrate to form a conformal shallow junction. The resulting structure can be used in the vertical integration of microelectronic devices. In other words, the resulting structure is suitable for growing selective epitaxial silicon, for growing epitaxial insulators, for processing devices above the silicide in that epitaxial silicon, and for processing devices with buried conductors.

Abstract translation: 用于形成平面外延钴硅化物并形成用于半导体处理的浅共形结的方法。 形成硅化钴和氮化钛双层。 化学去除氮化钛层。 然后将具有或不具有掺杂剂的离子注入到硅化钴层中。 在离子注入期间，将至少一部分硅化钴层转变为无定形钴硅混合物，而非非晶部分保持单晶。 如果离子注入包含掺杂剂，则在注入完成之后，硅化钴层的非晶态部分和非非晶部分均含有掺杂剂。 然后将衬底在包含氮气的环境中或在氧化环境中退火。 在退火期间，硅衬底的非晶部分再结晶成单晶硅化钴层。 如果离子注入后的硅化钴层含有掺杂剂，则在退火期间，掺杂剂被驱出钴硅化物层并扩散到硅衬底中以形成共形的浅结。 所得结构可用于微电子器件的垂直集成。 换句话说，所得结构适于生长选择性外延硅，用于生长外延绝缘体，用于在该外延硅中的硅化物上方处理器件，以及用于处理具有埋入导体的器件。