公开(公告)号：US20150213846A1

公开(公告)日：2015-07-30

申请号：US14602950

申请日：2015-01-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takashi NAKAGAWA ,  Takayuki IKEDA ,  Yoshiyuki KUROKAWA ,  Munehiro KOZUMA ,  Takeshi AOKI

IPC: G11C5/14 ,  G11C5/06

CPC classification number: G11C5/148 ,  G11C11/24 ,  G11C14/0054

Abstract: To provide a semiconductor device having a novel configuration, in which a malfunction and power consumption are reduced. A data holding circuit which includes a flipflop including first and second latch circuits and a shadow register including a nonvolatile memory portion; and a control signal generation circuit which generates a first control signal supplied to the first latch circuit and a second control signal supplied to the second latch circuit are included. The shadow register is a circuit which controls data saving or data restoring between the first and second latch circuits on the basis of a saving control signal or a restore control signal. The control signal generation circuit is a circuit which generates the first and second control signals at L level in a period during which data is saved or restored, on the basis of a clock signal, the saving control signal, and the restore control signal.

Abstract translation: 为了提供具有新颖结构的半导体器件，其中故障和功耗降低。 一种数据保持电路，包括包括第一和第二锁存电路的触发器和包括非易失性存储器部分的影子寄存器; 以及产生提供给第一锁存电路的第一控制信号和提供给第二锁存电路的第二控制信号的控制信号产生电路。 影子寄存器是基于保存控制信号或恢复控制信号来控制第一和第二锁存电路之间的数据保存或数据恢复的电路。 控制信号生成电路是在时钟信号，保存控制信号以及恢复控制信号的基础上，在保存或恢复数据的期间，以L电平生成第一和第二控制信号的电路。

公开(公告)号：US20150108556A1

公开(公告)日：2015-04-23

申请号：US14583363

申请日：2014-12-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Munehiro KOZUMA ,  Takeshi AOKI

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  G01J1/44 ,  H01L27/14609 ,  H04N5/378

Abstract: A semiconductor device includes a photodiode, a first transistor, a second transistor, and a third transistor. The second transistor and the third transistor have a function of retaining a charge accumulated in a gate of the first transistor. In a period during which the second transistor and the third transistor are off, a voltage level of a voltage applied to a gate of the second transistor is set to be lower than a voltage level of a source of the second transistor and a voltage level of a drain of the second transistor, and a voltage level of a voltage applied to a gate of the third transistor is set to be lower than a voltage level of a source of the third transistor and a voltage level of a drain of the third transistor.

Abstract translation: 半导体器件包括光电二极管，第一晶体管，第二晶体管和第三晶体管。 第二晶体管和第三晶体管具有保持积累在第一晶体管的栅极中的电荷的功能。 在第二晶体管和第三晶体管截止的期间，施加到第二晶体管的栅极的电压的电压电平被设定为低于第二晶体管的源极的电压电平， 第二晶体管的漏极和施加到第三晶体管的栅极的电压的电压电平被设置为低于第三晶体管的源极的电压电平和第三晶体管的漏极的电压电平。

公开(公告)号：US20140320766A1

公开(公告)日：2014-10-30

申请号：US14280851

申请日：2014-05-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hikaru TAMURA ,  Munehiro KOZUMA

IPC: G06F3/041

CPC classification number: G06F3/0412 ,  G06F3/0414 ,  H03K17/962 ,  H03K17/975 ,  H03K2217/96015 ,  H03K2217/96046 ,  H03K2217/9653

Abstract: A touch sensor (touch panel) which can be formed over the same substrate as a display portion is provided. Alternatively, a touch sensor (touch panel) which does not cause degradation in the quality of an image displayed on a display portion is provided. The touch panel includes a light-emitting element and a microstructure in which a pair of electrodes facing each other is isolated with an insulating material. As the insulating material, an elastic material or a material having a hole is used so that a filler layer formed using the insulating material can be deformed when a movable portion operates. It is preferable to use a material which is softened or hardened by certain treatment (e.g., heat treatment or chemical treatment) after formation.

Abstract translation: 提供了可以在与显示部分相同的基板上形成的触摸传感器（触摸面板）。 或者，提供不会导致显示在显示部分上的图像的质量下降的触摸传感器（触摸面板）。 触摸面板包括发光元件和其中彼此面对的一对电极用绝缘材料隔离的微结构。 作为绝缘材料，使用弹性材料或具有孔的材料，使得当可动部分操作时，使用绝缘材料形成的填充层可以变形。 优选在形成后通过某种处理（例如热处理或化学处理）使用软化或硬化的材料。