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    DISPLAY DEVICE AND ELECTRONIC DEVICE
    1.
    发明申请
    DISPLAY DEVICE AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20220336570A1

    公开(公告)日：2022-10-20

    申请号：US17762490

    申请日：2020-09-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takashi NAKAGAWA ,  Hidetomo KOBAYASHI ,  Hideaki SHISHIDO

    IPC: H01L27/32

    Abstract: A display device with high luminance is provided. A pixel includes a light-emitting device, a first transistor, a second transistor, a third transistor, a fourth transistor, a first capacitor, and a second capacitor. One electrode of the light-emitting device is electrically connected to one of a source and a drain of the first transistor. A gate of the first transistor is electrically connected to one electrode of the first capacitor and one of a source and a drain of the second transistor. The other of the source and the drain of the first transistor is electrically connected to one electrode of the second capacitor. One electrode of the second capacitor is electrically connected to a first wiring having a function of supplying a first potential. The other electrode of the second capacitor is electrically connected to the other electrode of the first capacitor, one of a source and a drain of the third transistor, and one of a source and a drain of the fourth transistor.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210217891A1

    公开(公告)日：2021-07-15

    申请号：US17054926

    申请日：2019-05-23

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Hidetomo KOBAYASHI ,  Takayuki IKEDA ,  Takashi NAKAGAWA ,  Takeya HIROSE ,  Shuichi KATSUI

    IPC: H01L29/786 ,  H01L29/66 ,  H01L27/108 ,  G11C11/4074 ,  G11C11/4096

    Abstract: A semiconductor device in which the accuracy of arithmetic operation is increased by correction of the threshold voltage of a transistor can be provided. The semiconductor device includes first and second current supply circuits, and the second current supply circuit has the same configuration as the first current supply circuit. The first current supply circuit includes first and second transistors, a first capacitor, and first to third nodes. A first terminal of the first transistor is electrically connected to the first node, and a back gate of the first transistor is electrically connected to a first terminal of the second transistor and a first terminal of the first capacitor. A gate of the first transistor is electrically connected to the second node, and a second terminal of the first capacitor is electrically connected to a second terminal of the first transistor. The first node of the first current supply circuit is electrically connected to a second node of each of the first and second current supply circuits. The threshold voltage of the first transistor is corrected by writing a correction voltage to the back gate of the first transistor.

    SEMICONDUCTOR DEVICE, DISPLAY SYSTEM, AND ELECTRONIC DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE, DISPLAY SYSTEM, AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20180033696A1

    公开(公告)日：2018-02-01

    申请号：US15653646

    申请日：2017-07-19

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takashi NAKAGAWA ,  Yuki OKAMOTO

    IPC: H01L21/822 ,  G09G5/00 ,  G11C8/10 ,  G09G5/399 ,  G09G3/36 ,  G06F17/50

    Abstract: A novel semiconductor device, a semiconductor device with low power consumption, a semiconductor device capable of displaying a high-quality image, or a semiconductor device with a small area is provided. The semiconductor device includes an image processing portion and a driver circuit. The image processing portion includes a processor and a correction circuit. The correction circuit includes a PLD. The correction circuit is capable of correcting data input from the processor using the PLD. The processor is capable of outputting data corrected by the correction circuit to the driver circuit as a video signal. The PLD is capable of executing first gamma correction by input of first configuration data. The PLD is capable of executing second gamma correction by input of second configuration data. The content of the first gamma correction is different from that of the second gamma correction.

    SEMICONDUCTOR DEVICE, DRIVING METHOD THEREOF, AND ELECTRONIC APPLIANCE
    6.
    发明申请
    SEMICONDUCTOR DEVICE, DRIVING METHOD THEREOF, AND ELECTRONIC APPLIANCE 有权
    半导体器件及其驱动方法及电子器件

    公开(公告)号：US20150256177A1

    公开(公告)日：2015-09-10

    申请号：US14635087

    申请日：2015-03-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Munehiro KOZUMA ,  Takayuki IKEDA ,  Yoshiyuki KUROKAWA ,  Takeshi AOKI ,  Takashi NAKAGAWA

    IPC: H03K19/00 ,  G06F1/16 ,  H03K19/177 ,  H01L29/786 ,  H01L27/12

    CPC classification number: H03K19/0008 ,  G06F1/16 ,  H01L27/1207 ,  H01L29/42384 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  H03K19/1776

    Abstract: A semiconductor device in which operation delay due to stop and restart of the supply of a power supply potential is suppressed is provided. Potentials corresponding to data held in first and second nodes while the supply of a power supply potential is continued are backed up in third and fourth nodes while the supply of the power supply potential is stopped. After the supply of the power supply potential is restarted, data are restored to the first and second nodes by utilizing a change in channel resistance of a transistor whose gate is electrically connected to the third or fourth node. Note that shoot-through current is suppressed at the time of data restoration by electrically disconnecting the power supply potential and the first or second node from each other.

    Abstract translation: 提供了一种半导体装置，其中抑制了由于电源电位供应的停止和重启而导致的操作延迟。 在电源电位的供给停止的同时，在供给电源电位的同时保持在第一节点和第二节点上的数据对应的电位被备份在第三节点和第四节点中。 在重新开始供电电位之后，通过利用栅极电连接到第三或第四节点的晶体管的沟道电阻的变化，将数据恢复到第一和第二节点。 注意，通过将电源电位和第一或第二节点彼此电断开来，在数据恢复时抑制直通电流。

    Semiconductor Device and Memory Device Including the Semiconductor Device
    9.
    发明申请
    Semiconductor Device and Memory Device Including the Semiconductor Device 审中-公开

    公开(公告)号：US20200295006A1

    公开(公告)日：2020-09-17

    申请号：US16885742

    申请日：2020-05-28

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Fumika Akasawa ,  Hiroki INOUE ,  Takashi NAKAGAWA ,  Yoshiyuki KUROKAWA

    IPC: H01L27/108

    Abstract: To provide a semiconductor device that can reduce power consumption and retain data for a long time and a memory device including the semiconductor device. The semiconductor device includes a word line divider, a memory cell, a first wiring, and a second wiring. The word line divider is electrically connected to the first wiring and the second wiring. The memory cell includes a first transistor with a dual-gate structure. A first gate of the first transistor is electrically connected to the first wiring, and a second gate of the first transistor is electrically connected to the second wiring. The word line divider supplies a high-level potential or a low-level potential to the first wiring and supplies a predetermined potential to the second wiring, whereby a threshold voltage of the first transistor is changed. With such a configuration, a semiconductor device that can reduce power consumption and retain data for a long time is driven.

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